晶體錯位 的英文怎麼說

中文拼音 [jīngtǐcuòwèi]
晶體錯位 英文
crystal dislocation
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 錯 : Ⅰ形容詞1 （錯誤; 不正確） wrong; mistaken; erroneous 2 （用於否定: 壞; 差） bad; poor 3 （交叉; ...
  • 位 : Ⅰ名詞1 （所在或所佔的地方） place; location 2 （職位; 地位） position; post; status 3 （特指皇帝...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. Z. zhang and w. geng, " direct observation of misfit dislocations at the interface between a decagonal quasicrystal and its epitaxial crystalline layers ", phil. mag. lett., 65 ( 1992 ) 211 - 218

    「十面體準晶與其表面晶體之間界面失配位錯的直接觀察」 ， ， （英國）
  2. 0 x 10 " 3 and 264. 6mpa respectively. 6. the damping mechanism at ambient temperature is related to viscous motion of dislocation and interactions between dislocation with various point defects, the viscous sliding between the phase with rich zn and primary a dendrite crystals and the micro - plastic deformation of the soft phase in the eutectic

    6 ） azsm合金的室溫阻尼行為與組織中的溶質原子和位錯的交互作用以及位錯的粘性運動、富鋅相與基體之間的粘性滑移、以及共晶體中較軟相的西安理工大學碩士學位論文微塑性變形有關。
  3. All main ways of metal strengthening including grain refining strengthening, dislocation strengthening, grain boundary and substructure strengthening, second phase strengthening, solid solution strengthening, as well as trip strengthening and so on, have totally found expression in the adi

    金屬強化的幾種主要方式：細晶強化，位錯強化，晶界與亞結構強化，第二相強化，固溶強化，細晶強化以及trip強化等都在等溫淬火球鐵中得到了體現。
  4. Testing of materials for semiconductor technology - determination of dislocations in monocrystals of iii - v - compound semi - conductors - part 1 : gallium arsenide

    半導體工藝材料的檢驗. -化合物單晶體錯位的測定
  5. Slight displacements of atoms relative to their normal lattice positions, normally imposed by crystalline defects such as dislocations, and interstitial and impurity atoms

    原子相對於它們正常點陣位置的輕微位移，通常是由晶體的缺陷，如位錯、間隙原子、雜質原子存在引起的。
  6. Presents the microstructure evolution in aluminum a nd copper after deformation by cold rolling in the strain range of 10 to 50 % red uction using tem and points out three types of dislocation structures are typica l and two of them are common for both materials and these two common types are f ound in non - cube grains and can be distinguished by crystallographic orientatio n of dislocation boundaries in the grains and the third type of structure is obs erved in cube grains, and concludes that grain orientation is important in deter mining the structure type but some other metallurgical parameters also have a ro le to play

    採用tem對冷軋多晶銅與多晶鋁的形變顯微組織演變進行了對比研究.結果發現：多晶銅及多晶鋁形變顯微組織中均含有三類典型的位錯結構類型，其中的兩種結構特徵在兩種材料中是相似的，這兩種類型結構存在於非立方取向晶粒，可通過晶粒中位錯邊界的晶體學取向加以區別，另一類型結構存在於立方取向晶粒；晶粒的晶體學取向決定了其形變顯微組織類型，但其它冶金學因素對顯微組織也有影響
  7. Abstract : the defects such as inclusion, splitting, dislocation and dendrite in the pbxla1 - x ( zry tiz sn1 - y - z ) o3 ( plzst ) single crystal grown from pbo - pbf2 flux by the slow cooling self - seeding technique were discussed in this paper. the forming mechanism of these defects were analyzed and some measures to eliminate the defects were proposed

    文摘:本文介紹了助熔劑緩慢降溫自發成核法生長的稀土摻雜鋯鈦錫酸鉛鑭（ plzst ）晶體中出現的幾種缺陷：包裹體、開裂、位錯、枝晶，分析了這些缺陷的形成機理並提出了減少和消除這些缺陷的一些措施。
  8. The electronic properties of hg _ ( 1 - x ) mn _ ( x ) te are dominated by defects, including native point defects ( vacancies, interstitials, antisites, and complexes ), extended defects ( all types of dislocations, grain boundaries, precipitates, melt spots, etc. ), and undesired impurities

    Hg _ （ 1 - x ） mn _ xte晶體的電學性能受缺陷的影響很大。晶體的缺陷主要有：原生點缺陷（空位、間隙原子、反位原子和復合體） 、擴散缺陷（各種位錯、晶界、沉澱相、低熔點相等）以及一些雜質。
  9. The width of stacking fault increased as partial dislocations move forward. in the fracture of 18 - 8 stainless steel, many dislocations were emitted from the crack tip during the early stage of crack propagation and moved forward, and then a dfz was formed between the crack tip and the pile - up dislocations. the dfz is an elastic zone

    不銹鋼斷裂時，裂尖首先發射位錯，並離開裂尖向前運動，裂尖前方留下無位錯區，位錯反塞積在無位錯區的端部，無位錯區是應變很高的異常彈性區，隨著裂紋的擴展，無位錯區逐漸發生晶體碎化和轉動。
  10. Defects such as extended dislocations, pile - ups of dislocation and grain boundaries ( twin boundaries ) were also investigated

    塗層中存在擴展位錯、位錯塞積列、 （孿）晶界等晶體缺陷。
  11. The combination of a crystallographic plane and, within that plane, a crystallographic direction along which slip ( i. e., dislocation motion ) occurs

    滑移面和該面上一個滑移方向的組合稱為一個滑移系，晶體滑移（如位錯的移動）可以沿該系統發生。
  12. The distribution or the morphology of grain boundaries, dislocations and precipitates in crystalline silicon were observed by scanning infrared microscopy ( sirm ), and much useful information was obtained

    通過紅外掃描儀觀察晶體矽中的晶界、位錯和不同金屬沉澱的分佈和形貌，並分析其相關信息。
  13. The dislocation - free, low defects densities crystal are acquired, in which the impurities concentration is decreased, their distribution are uniform, and the gaas crystal has high uniform and purity characteristics

    利用m - lec法可以消除單晶中的位錯，降低缺陷密度，降低單晶中的雜質含量，並能使雜質在晶體中的分佈均勻，得到晶體均勻性、純凈度都高的gaas單晶。
  14. In the theoretical simulation on the behavior of single helium atom in aluminum, the varieties of energy data including the formation, migration, binding, and dissociation energies for single helium atom at the interstitial, vacancy, grain boundary, and dislocation sites in aluminum lattice were calculated, based on the density functional theories, general gradient approximation and pseudopotential plane wave method. results showed that the most fittable sites for containing helium atoms inside the cell are vacancies. but in the view of the whole lattice, grain boundaries are the best

    計算結果表明，晶內he原子擇優佔位區是空位，而在整個晶體范圍，最有利於容納he原子的區域是晶界，位錯容納he原子的能力次於晶界和空位；在fcc -鋁的間隙位中， he原子優先充填四面體間隙位；晶內間隙he原子是可動的，通過間隙he原子的運動，可在晶內聚集，或被空位、晶界、位錯等缺陷束縛。
  15. In addition, the growth mechanism of c - axis was screw dislocation growth or rough interface growth, but that of a, b - axis was two - dimension nucleation growth. because in low supersaturation, the speed of helix dislocation growth and rough interface growth was higher than that of two - dimension nucleation growth

    另外，由於羥基磷灰石晶體結構的特點， c面主要以螺旋位錯生長和粗糙面生長兩種機制為主，而a 、 b面則主要以光滑面的二維成核生長為主。
  16. _ the phenomenon of saturation or " lock up " when all of the grains have transformed, is described in a rattier simple form through domain volume fractions by the proposed model, in which domain switching in ferro - electrics is analogous to that of dislocation movement on crystal slip planes in metals

    ? ?依據晶體塑性理論，將鐵電材料中的電疇翻轉類比于晶體位錯滑移面上的滑移系，定義鐵電材料中相應的電疇反轉系；採用電疇的體積分數表述電疇翻轉的變化量，得到了電疇翻轉的飽和特性的簡單描述。
  17. Misfit characters effect on the dislocation structure and nucleation mechanism in fcc epitaxial crystals

    失配性質對面心立方外延晶體失配位錯結構及其形核機制的影響
  18. Computer simulation of self - organised dislocation structures during the cyclic deformation in a copper single crystal

    計算機模擬循環形變銅單晶體的自組織位錯結構
  19. Electronic structure of dege dislocation in single crystal nickel - base alloy

    單晶鎳基合金體刃位錯的電子結構
  20. Method for detecting dislocations of synthetic quartz using x - ray topographic technique

    人造石英晶體位錯的x射線形貌檢測方法
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