晶體鍵合 的英文怎麼說

中文拼音 [jīngjiàn]
晶體鍵合 英文
crystal bonding
  • : Ⅰ形容詞(光亮) brilliant; glittering Ⅱ名詞1. (水晶) quartz; (rock) crystal 2. (晶體) any crystalline substance
  • : 體構詞成分。
  • : 名詞1 [機械工程] (使軸與齒輪、皮帶輪等連接並固定在一起的零件) key 2 [書面語] (插門的金屬棍子)...
  • : 合量詞(容量單位) ge, a unit of dry measure for grain (=1 decilitre)
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. The hydrogen - bonded 3d supramolecular compound derived from cinchona alkaloids : synthesis and crystal structure

    一個具有三維氫超分子結構的金雞納霜生物堿衍生物的成和結構
  2. By evaperation of methol with a little pyridine existing, we abtained the supramolecular structure of resorcinarene binding molecular of water by hydrogen bond. this is a clathrate complexation which possessed a novel three dimention supramolecular structure

    本文研究了間杯芳烴同吡啶分子于甲醇中形成的超分子系,其單結構表明,間杯芳烴同吡啶分子通過氫自組裝形成了籠形包物的超分子結構。
  3. High accuracy kdp crystal optics is now considered as one of optics that is the most difficult to be processed for its series of disadvantageous characteristics to optics processing such as anisotropy, soft nature, easy to deliquesce, high brittleness, sensitive to temperature change, easy to crack and so on. therefore the long machining period, low percent of pass and astaticism quality has become the bottleneck of icf technology, and the surface quality control of kdp crystal processing has become the key problem to be solved in the research of icf in our country

    Kdp零件是目前公認的最難加工的光學零件之一,因為kdp具有各向異性、質軟、易潮解、脆性高、對溫度變化敏感和易開裂等不利於光學加工的特點,所以加工周期長、格率低、質量不穩定成為慣性約束聚變技術的瓶頸, kdp超精密加工表面質量控制問題已經成為我國慣性約束聚變研究中亟待解決的關問題。
  4. Through analysising the characteristics of the power system with floating neutral point deeply, the paper puts forward a new plan of single - phase to ground fault line selection on the base of s ' s signal injecton method and gives the hardware and software design. in this design, the high speed sampling and data processing is carried out through using dsp processor ; the large electrice current is drived through the application of a high - performance audio power amplifier and transformer ; the communication between host computer and detectors is realized through rs485 bus technology ; the difference multilevel frequency - selected amplifier is designed and the feeble signal of space is sampled on the base of the theory of magnetic induction ; the interface between dsp and exterior chip and rs485 interface logical is designed through using fpga ; the using of lcd module and keyboard interfacing chip makes the interface between human and machine ; the programme of host computer and detectors is designed through using blocking design method

    在本設計中,採用高速的dsp處理器,實現了對故障特徵信息的高速採集與處理;採用大功率的功放元與變壓器配的方法,實現了大電流信號的驅動輸出;採用485總線技術,組建了裝置主機與多探測器之間的主從式通訊網路,實現了多干擾條件下裝置主機與多探測器的可靠通訊;設計了差分式多級選頻放大電路,採用磁感應的方法實現了對空間微弱信號的接收;利用fpga技術,實現了控制器與多外設的介面及數字信號的串並轉換;採用了先進的lcd液顯示模塊及盤介面元,設計了人機信息交互的介面;採用了模塊化的軟設計方法,開發了裝置主機及探測器的軟程序。
  5. An automatic flip chip bonder is a precision instrument used to align and bond one or more dies onto a substrate in semiconductor industry. it develops for the mass production of ic, mems and moems with small feature sizes and high precise bonding demands. an alignment system is one of the key components in flip chip bonders

    全自動倒裝貼片機( flipchipbonder )是半導生產工藝中完成元和基底對準、的高精度自動化設備,適於特徵尺寸小,精度要求高的ic ( integratedcircuit ) 、 mems ( microelectromechanicalsystem ) 、 moems ( microopticalelectromechanicalsystems )等的大規模生產。
  6. The main content is design of digital man - machine interface system, a speed regulating system of good stabilization and dynamic performance ; software for appraising the performance of wire feeder. the first, a digital man - machine interface system using at89s8252 singlechip is designed. the system uses sd7218a keyboard / display chip with serial bus interface

    首先,人機交互系統選用at89s8252為核心控制元,選用具有串列總線介面的sd7218a盤/顯示元完成了數字化人機交互系統軟、硬設計;採用rs - 485總線實現主控系統和人機交互系統的數據交互;系統採用數字編碼器和盤配的方式實現焊接參數的選擇和設定,同時還具有最優參數存儲、調用等功能。
  7. Based on the analysis of the digital image print head, we first discuss the key technique of the lcos projection display, including the cell characteristic and optical projection system characteristic, then the application of lcos for the digital image print head, its hardware system. this wins initial success for the color correction and system software of our digital image print head

    論文在分析國內外數碼電子片夾的基礎上(第一章) ,首先論述了lcos投影系統的關技術,著重分析了lcos投影儀中液盒特性以及投影系統光學特性,然後在此基礎上結實際情況就現階段lcos用於數碼照片擴印系統的基本結構進行一些具分析,並重點設計與分析了金成lcos數碼電子片夾的系統結構以及各個組成部分,為後面lcos數碼擴印系統的顏色校正以及數碼照片擴印系統軟的研究提供了一定的基礎(第二章) 。
  8. Critical circuits in developing this board, such as tht modulation circuit, demodulation circuit, pll and filter, were analyzed in detail. parameters adopted in these circuits were also calculated. based on all that mentioned above, a rf board was implemented and related tests and experiments were successfully done as well

    本文主要對cdpd移動終端數據機的硬開發中的關部分?高頻部分電路進行了研究,論文在cdpdv1 . 1規范的基礎上,提出了射頻部分電路的實現方案,選擇了適的核心元,並對電路中的調制解調電路、鎖相環、濾波器等關模塊進行了較為詳細的分析,對電路中的有關參數進行了計算。
  9. The other is to combine with different material, in this way the key of design is to elect material with matching birefringent dispersion and similar physico - chemical nature

    另一種方法是採用不同的材料組,設計的關在於選擇雙折射色散相匹配、物化性能相近的材料進行組
  10. Finite element method ( fem ) was used to simulate thermal and vibration problems in stacked - die csp assembly. finite element models and apdl programes were built in ansys to conduct thermal, thermal - mechanical and vibration analysis. the aim of these researches were trying to find some possible reasons and trends which affect the reliability of stacked csp / bga assembly and give some useful suggestions for the packaging design

    本論文正是針對以上情況,以採用引線工藝的三維疊層csp / bga封裝(裸元疊裝)為研究對象,在有限元分析軟ansys中建立相關的有限元模型,編制了相應的apdl參數化分析程序,進行了溫度場分析、熱循環加載下的snpb金焊點疲勞分析和實裝pcb板的振動模態分析。
  11. This article gives a review on the progress of the recognition and complexation between cucurbiturils as a noval macrocyclic host compound and metal ion, including the synthesis methods of supermolecular adducts, crystal structures, thermodynamics of binding and potential applications

    摘要概述了新一代大環主物南瓜尼與金屬離子的識別及配作用的研究進展,包括其超分子配物的成方法,結構,的熱力學性質及其應用前景。
  12. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化物薄膜沉積,得到了含氮量為21at的cn薄膜;研究了襯底溫度和反應氣壓強對薄膜結構特性的影響,給出了cn薄膜中n含量較小、 sp ~ 3結構成分較少和薄膜中僅含有局域cn的原因;引入脈沖輝光放電等離子增強pld的氣相反應,給出了提高薄膜態sp ~ 3結構成分和薄膜的含n量可行性途徑;應用pe - cvd技術以ch _ 4 + n _ 2為反應氣並引入輔助氣h _ 2 ,得到了含n量為56at的態cn薄膜;探討了cn薄膜形貌、成分、結構、價狀態等特性及其與氣壓強和放電電流的關系,證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果;採用光學發射譜技術對cn薄膜生長過程進行了實時診斷,得到了實驗參量對等離子中活性粒子相對濃度和氣相反應過程的影響規律,給出了cn薄膜沉積的主要反應前驅物,揭示了cn薄膜特性和等離子內反應過程之間的聯系;採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化物薄膜的結構特性,揭示了si原子對薄膜生長過程的影響,給出了si基表面碳氮薄膜的生長模式;在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積,證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性,並可顯著提高態碳氮材料的生長速率。
  13. One of the most key technologies of preparing cd1 - xznxte detector is to make ohmic contact film electrode on cd1 - xznxte crystal ' s surface, and the main technology usually used is evaporation, but the cohesion of evaporated film is n ' t very firm

    制備cdznte探測器最關的技術之一就是在cdznte表面制備出歐姆接觸薄膜電極。關于在cd _ ( 1 - x ) zn _ xte表面制備接觸電極用導電薄膜,大都是採用蒸發鍍膜技術,膜層與cdznte不很牢固。
  14. The results show that crystal inhomogeneities and suitable contacts are critical to the fabrication of high quality cdznte spectrometers. the modified growth technique is a new and promising method for growing highly pure and perfect cdznte single crystals. good quality ohmic contact detectors are achieved when gold or indiumare deposited as electrodes on polished and chemically etched surface

    結果表明:材料內部的缺陷和歐姆接觸是影響器件性能的兩個關因素,採用改進的富鎘氣氛下坩鍋旋轉下降法生長的具有較低的缺陷濃度,適製作探測器,採用au 、 c可得到歐姆接觸。
  15. The fourier transform infrared ( ftir ) spectrum is an effective technology for studying the hydrogen content ( ch ) and the silicon - hydrogen bonding configuration ( si - hn ) of hudrogenated amorphous silicon ( a - si : h ) films. in the paper, ch and si - hn of a - si : h films, fabricated at different ratio of h2 / sih4 by microwave electron cyclotron resonance plasma chemical vapor ( wmecr cvd ) method, have been obtained by analyzing their ftir spectra that are treated by baseline fitting and gaussian function fitting. the effects of ratio of h2 / sih4 on ch and si - hn are studied

    Fourier紅外透射( ftir )譜是研究氫化非硅( a - si : h )薄膜中氫含量( c _ h )及硅-氫模式( si - h _ n )最有效的手段,對于微波等離子化學氣相沉積( mwecrcvd )方法在不同h _ 2 sih _ 4稀釋比下制備出的氫化非硅薄膜,我們通過紅外透射光譜的基線擬、高斯擬分析,得出了薄膜中的氫含量,硅氫方式及其組分,並分析了這些參數隨h _ 2 sih _ 4稀釋比變化的規律。
  16. In order to improve the properties of materials, one needs to understand the structural relationship between interface and matrix of the materials, such as interface atomic structure, misfit dislocation, chemical bond structure, stress field distribution, composition segregation etc. there are tremendous research works on the grain boundary and interface structures during last century and the sophisticated theory about grain boundary and interface, i. e. coincidence site lattice and 0 - lattice theories had been developed simultaneously

    眾所周知,材料的宏觀性質是由其微觀結構所決定的,因此,為了改善材料的宏觀性能我們有必要弄清楚材料的界面與基之間的結構關系,如界面的原子結構、失配位錯、化學、應力場的分佈等等。在上世紀,人們已對界和相界面結構進行了大量的研究,同時,相關的理論如「重位點陣」和「 o -點陣」理論也發展成熟。
  17. Ftir and xps proved that ptcda and tcpc were attached on the surface of silicon by covalent ; afm and uv - vis showed ptcda and tcpc arranged orderly on surface of silicon ; through raman spectrum, we found that macrocycle molecules stand on surface of silicon, while macrocycle molecules in film by vacuum deposition parallel to silicon surface

    紅外光譜和光電子能譜證明了?和酞菁成功的化學到單硅表面, afm和uv - vis吸收光譜表明了?和酞菁單層膜在硅基上呈有序排列。拉曼光譜的研究發現?酐分子大環以一定的角度立於硅基表面,而不是平行於基表面,與蒸鍍手段得到的?酐膜的堆積形態完全不同。
  18. ( 4 ) specially made a research in the key technology of uhf complete solid - state high - frequency linear power amplifier : balancing transistor high - frequency linear power amplifier and the technology of 3db power integrating ( allocating )

    ( 4 )重點研究了uhf全固態電視發射機高頻線性功率放大器的關技術:平衡式管高頻線性功率放大器以及3db功率成(分配)技術。
  19. Based on silicon - piezoresistive method, the paper first gives the theory of array silicon piezoresistive pressure, acceleration sensor, and the design of its incorporated chip, microstructure and out - circuit. several key techniques of making array silicon piezoresistive pressure, acceleration sensor such as 1c technic, mems ( silicon - silicon direct bonding, anodic bonding, anisotropic etching ) is also studied. minuteness engine machining, anode bonding etc. in the paper there are three ways which are examine - form, curve simulanting, to carry out sensors non - linear self - emendating ; adopt the several curves approaching and curve simulating to achieve the aims of sensor error self compensation, fusion technology etc. therefore, it providing referenced values of ways and directions for sensor system directing on

    論文首先以硅壓阻效應原理為基礎,討論了陣列式硅壓力、加速度傳感器的設計原理,並對陣列式硅壓力、加速度傳感器中集成敏感元(壓力、加速度) 、總結構和壓力陣列的信號處理電路進行了設計,在陣列式硅壓力、加速度傳感器的研製中,還研究了半導平面工藝、大規模集成電路技術、微機械加工技術(硅硅、靜電封接、各向異性腐蝕)等關技術的應用。
  20. Based on the principle of gmsk, analyzing the form of gmsk modulation and demodulation, we have completed the system simulation of gmsk in the systemview platform, at the same time, combined with hardware and software, we have realized modulation and demodulation of gmsk with the dsp chips tms320vc549

    在熟悉gmsk調制解調原理的基礎上,分析了gmsk正交數據機的基帶構成,完成了在systemview平臺下gmsk數據機的系統模擬,並將模擬演算法用於tms320vc549dsp元,使用軟硬的方式完成了gmsk基帶信號的調制解調,為國內研製ais系統儲備了關技術。
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