晶體電極 的英文怎麼說

中文拼音 [jīngtǐdiànjí]
晶體電極 英文
crystalline electrode
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 極 : i 名詞1 （頂點; 盡頭） the utmost point; extreme 2 （地球的南北兩端; 磁體的兩端; 電源或電器上電流...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  • 電極 : electrode; pole
  1. Secondly the major mechanisms of degeneration of pcss are caused by both the filamentary nature of the current in high - gain pcss damage to the chip of the switch and the charge domain reached the anticathode causes the erosion of metal interface

    開關退化的主要原因是:開關體內的絲狀電流對開關晶元的損傷;以及電荷疇到達陽極時來不及放電而產生的電荷擁擠現象對開關電極接觸表面的損壞。
  2. In the 1960s the ic market was broadly on bipolar transistors.

    六十年代集成電路市場主要為雙極型晶體管。
  3. Affiliated with piezoelectric effect of quartz, inner nonlinear electric polarization is calculated, equivalent body bound charges and sueface bound charges under torque are approached

    聯系石英晶體的壓電效應，計算出內部的電極化場，並利用電場等效原理求解出等效電極化體電荷與面電荷分佈。
  4. As a comparison, ba1. 03ce0. 8gd0. 2o3 - was synthesized by sol - gel method. among these samples, nonstoichiometric samples were synthesized for the first time. the research work involved : the crystal phase of the sinters were determined by xrd ; ionic conduction under different experimental atmospheres was measured by gas concentration cells ; performances of hydrogen - air fuel cells with the sinters as electrolytes and porous pt as electrodes were measured

    用粉末x射線衍射儀鑒定它們的結晶相；在（ 600 1000 ）范圍內，以燒結體作為電解質隔膜，多孔性pt黑為正、負電極， pt - rh合金網為集電極，分別組成氫濃差電池、氧濃差電池及氫?空氣燃料電池並測定了它們的性能，研究了不同氣氛下樣品的離子導電特性及影響燃料電池性能的因素。
  5. We have been considering the transistor with a current fed into the emitter.

    我們所研究的晶體管都是把電流饋入發射極。
  6. Ceo22 is used as optical materials, polishing agents, ultraviolet absorption materials, the cleaning catalyst of car ' s waste gases, chemical decolorant of glass, radiation - resisting glass permanent magnet, electronic ceramics etc. if it is processed into nanoparticles, it will exhibit some novel properties led to varied applications. for example, ceo22 nanocrystal is a better promoter of cytochrome c and the stabilizer of zro22 ceramics. because of its high index of refraction and good stability, it is used to produce reduced reflection film

    Ceo _ 2是一種廉價而用途極廣的材料，如用於發光材料、拋光劑、紫外吸收材料、汽車尾氣凈化催化劑、玻璃的化學退色劑、耐輻射玻璃、永磁體、電子陶瓷等，其納米化后將出現一些新的性質及應用，如ceoz納米晶是細胞色素c的良好的催進劑，還用作zro :陶瓷的穩定劑，由於ceo :折射率高，穩定性好，常用於制備減反射膜等。
  7. For electrodeposition by dc methods, the metals deposite uninterrupted and the particles were also embeded uninterrupted into the coatings ; for electrodeposition by pc method, the particles with biggish volume were desorbed from the coatings and returned to the electrolyte again owing to the presence of pulse interval ; for electrodeposition by prc method, the particles carried positive charges are much more easy to desorb from the coatings owing to the effecf of reverse pulse current combined with pulse interval, in addition, the reverse pulse current also could dissovle the metals, further accelerates the desorption of particles, thus the particles size embeded in the coatings by prc method is the least

    直流電沉積時，基質金屬的沉積連續進行，粒子在電極表面不間斷嵌入鍍層;單脈沖電沉積由於脈沖間歇的存在使得具有較大體積的粒子會脫附，重新回到溶液中;採用周期換向脈沖時，反向脈沖電流使表面荷正電的較大的粒子更易從電極表面脫附，同時，反向脈沖電流對基質金屬的溶解作用，也會促進粒子的脫附，因此鍍層中復合粒子尺寸最小。隨著鍍層中粒子復合量的增加，三種鍍層的晶粒都明顯細化，說明al _ 2o _ 3的存在阻止了晶粒的長大，提高了電沉積過程中晶核的形成速率。
  8. Secondly, we make an in - depth study and analysis in allusion to the given oscillatory circuit - butler common base harmonic circuit. the detailed analysis of the dynatron which is the main noise source in the oscillatory circuit is also made, including how excitation affects the dynatron and crystal

    然後針對特定的振蕩電路結構-串聯型巴特勒共基振蕩電路-進行深入的研究和分析，並對主振電路中主要的噪聲源-三極體進行的深入分析，包括激勵對三極體及晶體的影響。
  9. Every transistor has at least three electrodes.

    每個晶體管至少有三個電極。
  10. Semiconductor, diodes, bipolar junction transistors, field - effect transistors, transistor amplifiers, frequency response, operational amplifiers, differential and multistage amplifiers, integrated circuits

    半導體、二極體、雙極電晶體、場效電晶體、電晶體放大器、頻率響應、算放大器、差動及多極放大器、積體電路。
  11. The course concentrates on circuits using the bipolar junction transistor, but the techniques that are studied can be equally applied to circuits using jfets, mosfets, mesfets, future exotic devices, or even vacuum tubes

    本課程集中講解使用雙極結晶體管的電路，但所學技術同樣適用於使用jfet ， mosfet ， mesfet ，未來的稀有裝置，甚至真空管的電路。
  12. Standard test method for measuring transistor and diode leakage currents

    晶體管及二極體泄漏電流測量的標準試驗方法
  13. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。
  14. Precise thickness - shear resonance frequency of electroded piezoelectric crystal plates and its applications in resonator design

    帶電極壓電晶體板厚剪共振頻率的精確確定及其在諧振器設計中的應用
  15. However, in our nation, the research on gan - based microelectronic devices is in the early stage, and a great deal of vestigation is still needed to perform on separative processes of gan devices. due to the lack of algan / gan heterojunction materials in the country, a few researches on algan / gan were made, and the investigation on schottky rectifiers is much less

    在國內， gan基微電子器件的研究剛開始起步，制備gan分立器件的工藝尚處于探索研究階段，特別是受algan gan二維電子氣材料來源的限制，國內algan gan基的場效應晶體管的研究開展得較少，關于肖特基整流二極體的研究更少。
  16. Even the most optimistic proponents of ics believe that major innovations will be required to reach the ultimate operating limit of the silicon transistor : a length for functional features around 10 nanometers ( nm ), or about 30 atoms long

    即使是最樂觀的ic擁護者也認為，得有重要的創新，才能達到矽電晶體操作的最小尺寸極限：接近10奈米的圖案，或是差不多30個原子的長度。
  17. The determination of human thymidine kinase ( htk ) in human serum, which is a key indicator of cancers can give information for the diagnosis and treatment of the malign diseases. the protein a layer was first self - assembled onto the gold electrode surfaces of quartz crystals, the monoclonal antibodies were then orientedly immobilized through the specific binding between the fc terminals of the antibodies and the self - assembled protein a. with this sensor, the affinity constant of antigen - antibody binding was estimated to be 1. 85 106 l / mol according to the scatchard ’ s plotting method, which proved the high bioactivity of antibody. finally, an amplified piezoelectric immunosensor was designed to determine the htk in

    實驗中將蛋白a吸附於鍍金壓電石英晶體電極表面，用於定向固定htk單克隆抗體，成功研製了檢測htk的壓電石英晶體傳感器，並基於標準scatchard繪圖法，計算出免疫反應的親和常數為1 . 85 106l / mol ，證明該單克隆抗體具有較高的免疫活性;同時基於酶催化沉澱技術，設計了的檢測htk的質量放大壓電石英晶體傳感器，該傳感器可在0 . 1 - 10ng范圍內對htk進行定量檢測，應用此傳感器成功地對5種癌癥病人血清中htk的濃度進行了測定，實驗結果為癌癥的臨床診斷與治療提供了參考。
  18. The crystal structure and elec trode reaction of n - 2 - hydroxy - 5 - methylphenyl phenyl methylene - o - phenylenediamine

    亞甲基鄰苯二胺的晶體結構及電極反應
  19. There are mang immobilization methods we can use directed or indirected. the use of sam in various fields of research is rapidly growing, a interesting work is based on the strong absorption of disulfides ( r - s - s - r ), sulfides ( r - s - r ) or thiols ( r - sh ) on the gold surface. while integrating with the new improving in biomolecule immobilization, this thesis presents a theoretical and applied studies of several new piezoelectric immunosensors based on the au - s sams

    通常將生物分子固定於石英晶體電極表面或石英晶體表面的惰性載體塗層主要有直接固定法和間接固定法，包括有硅烷化連接法，聚合物膜連接法，非特異性吸附蛋白間接固定法， lb膜技術，生物素-親和素體系（ bas ）法以及自組裝單分子層（ sams ）技術等等。
  20. The method to determin reversal electric field was provided, and on the base of experiment data in this method, a new periodicity poled waveform and period was designed

    根據該方法的實驗數據設計出了一種新的周期性極化波形和周期。實驗的結果有:通過實驗測出了slt晶體的極化反轉電壓為1 . 6kv / mm 。
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