最大輸出電阻 的英文怎麼說

中文拼音 [zuìdàshūchūdiànzǔ]
最大輸出電阻 英文
maximum output resistance
  • 最 : 副詞（表示某種屬性超過所有同類的人或事物） most; best; worst; first; very; least; above all; -est
  • 輸 : Ⅰ動詞1 （運輸; 運送） transport; convey 2 [書面語] （捐獻） contribute money; donate 3 （失敗） l...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 阻 : 動詞（阻擋; 阻礙） block; hinder; impede; obstruct
  • 輸出 : 1 （從內部送到外部） export 2 [電學] output; outcome; outlet; out fan; fanout; 輸出變壓器 output ...
  • 電阻 : （物質阻礙電流通過的性質） resistance; electric resistance （電路中兩點間在一定壓力下決定電流強度...
  1. If the node is at, or near to, ground then a grounded guard ring will be appropriate, if it is at some other potential it may be necessary to use a high input impedance buffer amplifier, with its input connected to the node, to force the guard ring to the node potential

    如果被保護的節點的電位是（或接近）零電位，採用地線保護環最為合適；如果節點電位是其他值，那麼可以用高輸入阻抗放大器組成緩沖器，輸入端連接該節點，輸出端連接保護環。
  2. Secondly, compared with some other kinds of comparator structure and based on the preamplifier - latch fast - compare theory, a novel topology of cmos preamplifier latch comparator circuit is presented. considering trade - off between kickback noise and power dissipation, reference resistance value is optimized. according to the encode demands of different stage resolution, clock - control encode circuit is designed

    其後，在具體的子adc設計中，對比各比較器類型的優缺點，並基於預放大鎖存快速比較理論，提出一種新型高速低功耗預放大鎖存比較器電路拓撲;根據adc系統所允許的參考電壓最大波動限制，在回饋噪聲對輸入參考電平的影響和功耗之間折衷，確定優化的參考電阻串阻值;根據不同級精度的編碼要求，設計出時鐘控制編碼電路。
  3. The synchronous rectifying and low power sampling technology is used to reduce the power consumption, flexible external loop compensation, error amplifier output clamp are adopted for better system large signal response. the piecewise slope compensation technology is employed to minimize the consequence of over compensation. the sensor resistor is externally connected, which realize output voltage programmable. the overheat protection and under voltage protection modules are integrated in the die to allow the reliable operation of the system

    同時，電路設計採用同步整流技術、低功耗電流采樣技術降低功耗，提高轉換效率;採用靈活的外部環路補償技術、誤差放大器輸出嵌位技術以實現良好大信號特性;採用分段斜坡補償技術，消除不穩定因素，並最大程度地減小過補償帶來的問題;採用外接輸出采樣電阻的方式，實現輸出電壓的可編程。
  4. Then a thorough analysis to the bias - magnetic of ppfc is made. the retraining effects of the main parameters ( include clamping capacitance c, output filter inductor lf, load r, the leakage inductor ls and source winding resistance r ) are studied under the conditions of different von, different ton and different winding parameters. then a conclusion can be drew, that the smaller lf and the bigger r are, the better the bias - magnetic is restrained and c has a best value to retrain the bias - magnetic

    分別對管壓降不同，導通時間不同以及兩原邊繞組參數不一致（包括漏感、電阻、激磁電感三種情況）的情況下，主要參數（包括箝位電容c 、輸出濾波電感lf 、負載r 、原邊繞組漏感ls 、原邊繞組電阻r ）對偏磁的抑制作用進行了模擬分析研究，得出lf越小， r越大時激磁磁勢偏移量ni越小， c在其他參數確定時對抑制偏磁有最優值等結論，為參數的優化設計提供了依據。
  5. The calculation method of technical parameters of maximum output power, the short time power and continued power ( equivalent heating ) in electric braking are derived from analyzing the relationship of maximum regenerative power with resistance value of ground absorption equipment, model of traction power supply, train circuit and network voltage drop while performing electric braking

    通過分析列車電制動時的最大再生功率與電阻吸收裝置的電阻值、電制動時刻牽引供電系統的模型、列車電流、網壓降之間的關系，導出了列車電制動時最大輸出功率、地面電阻吸收裝置的短時功率和持續（等效發熱）功率等技術參數的計算方法。
  6. The device structure and physical models of 4h - sic mosfet and mesfet are built and the properties are simulated with the use of medici software. the influence of the temperature and structure parameter on the device ' s properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately. the maximum power density of 4h - sic mesfet is as high as 19. 22w / mm. at the same time, the processes of sic field - effect transistor is studied and the fabrication processes suitable to sic mosfet are developed.

    論文分析建立了4h - sicmosfet和mesfet器件的結構模型和物理模型，採用二維器件模擬軟體medici對4h - sicmosfet和mesfet的輸出特性進行了模擬分析，研究了溫度和結構參數對器件特性的影響，表明兩種器件的擊穿特性均沒有負阻現象，擊穿電壓分別達到85v和209v ，由此得到4h - sicmesfet最大功率密度可達到19 . 22w mm ；同時，研究了sic場效應晶體管的製作工藝，初步得到了一套製造sicmosfet器件的製造工藝流程，研製出了4h - sicmosfet器件。
  7. According to the relationship of the angle of the maximum torque and the q axis, the reluctance torque for salient pmsm is made full use of and the sator current amplitude is reduced by a large percentage, so that the system robustness is greatly increased. at the speed loop, this paper presents a single value model algorithmic control strategy which is the simplied form of normal model algorithmic control and has less computation work than the latter, so the real - time performance is very good

    對于嵌入式pmsm ，根據在電流幅值一定的條件下最大輸出轉矩與（為等效電流矢量和q軸之間的相位角）之間的關系，將磁阻轉矩轉換為輸出轉矩從而提高了輸出轉矩，改善了系統的控制性能；在速度環採用單步模型演算法控制，其計算量比較少，提高了系統的實時性和魯棒性。
  8. Maximum output resistance

    最大輸出電阻
  9. The last part concludes that mr dampers is one of the very attractive control elements in semi - active control. as one of mixed model mr dampers, armature piston ' s mr dampers have principle designs good function and better practical value, it ' s worth to popularize use. about the armature piston ' s mr damper ' s designs, the space of work, the diameter of wok and the length of magnetic pole have obvious affects to the force of mr dampers, mr fluid materials should be paid attention, input electric current affects mr dampers greatly the high current increases the damping force, the effect of reduce vibration increase obviously,

    最後，論文給出了結倫：磁流變液阻尼器是半主動控制裝置中非常吸引人的控制元件之一，混合工作模式的磁流變阻尼器結構簡單，阻尼效果比流動模式和剪切模式均要好，是一種比較理想的磁流變阻尼器；電樞活塞式磁流變阻尼器作為混合模式磁流變阻尼器的一種結構形式，其結構設計合理，性能良好，具有較強的實用價值，值得在工程中推廣應用；在電樞活塞式磁流變阻尼器的設計中，應特別注意工作間隙h 、工作直徑d 、磁極長度卜都對阻尼器的阻尼力有明顯的影響，並注意選用合適的磁流變液材料；輸入電流對磁流變阻尼器的阻尼效果影響很大，輸入大電流時阻尼力明顯增大，減振效果明顯提高。
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