有效電流密度 的英文怎麼說

中文拼音 [yǒuxiàodiànliú]
有效電流密度 英文
effective current density
  • : 有副詞[書面語] (表示整數之外再加零數): 30 有 5 thirty-five; 10 有 5年 fifteen years
  • : Ⅰ名詞(效果; 功用) effect; efficiency; result Ⅱ動詞1 (仿效) imitate; follow the example of 2 ...
  • : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
  • : Ⅰ動1 (液體移動; 流動) flow 2 (移動不定) drift; move; wander 3 (流傳; 傳播) spread 4 (向壞...
  • : Ⅰ名詞1 (秘密) secret 2 [紡織] (密度) density 3 (姓氏) a surname Ⅱ形容詞1 (距離近; 空隙小)...
  • : 度動詞[書面語] (推測; 估計) surmise; estimate
  • 有效 : effective; valid; efficacious
  • 電流 : current; galvanic current; electric current; electricity; current flow電流保護裝置 current protec...
  1. 1. the composition and current efficiency of ni - w - b electrodeposit in the bath containing ammonium citrate as complexing agent were related to the deposition current density and bath composition

    在以檸檬酸銨為絡合劑的鍍液中, ni - w - b合金沉積層的組成和沉積率與沉積及鍍液的組成等關。
  2. The method of obtaining high concentration of na2feo4 solution by quick electrolysis mainly contains four aspects : adoption of either a diaphragm or an ionic membrane electrolytic cell in which a thin anodic cell lying between the two cathodes, ( 2 ) using an iron anode that has larger specific surface area, ( 3 ) keeping suitable concentration of naoh in the anodic cell, adoption of lower current density and higher electrolyzing speed. the practical technique parameters follow a s below : the naoh solution of 14 - 16mol / l, the temperature of 303 - 308k, the surface anodic current density of 300a / m2, the unit electrolyzing speed of efficiency larger than 6. 0a / l

    快速解獲取高濃na _ 2feo _ 4溶液的方法,主要包括四個方面:採用兩陰極室夾一厚較小的陽極室的隔膜(或離子膜)解槽;使用比表面積較大的鐵網陽極;保持陽極室中適宜濃的濃naoh溶液;採用較低的和較高的解速。具體工藝參數是: 14 16mol / lnaoh溶液、溫303 308k 、表觀陽極300a m ~ 2 、單位解速6 . 0a / l 。
  3. Finally, because high - speed power solenoid valve is one of the most important executive parts in the electronic control diesel engine and the performances of diesel engine are strongly related to the solenoid valve, the response performance of the solenoid valve is investigated. the response performance of the solenoid is influenced by many factors, such as driving voltage, electric driving unit etc. in order to have high excitation voltage and in low maintaining voltage, a high - low voltage electric driving unit is designed, and in order to make the solenoid valve close more rapidly, an active free - wheeling circuit and a bootstrapping circuit are designed in the electric driving unit, too. in the high - low electric driving unit, high voltage and low voltage are supplied by the dc - dc device and by the accumulator respectively

    高速強力磁閥的響應性能除了與閥本身的結構和材料關外,與驅動壓、驅動路的設計切相關,本文通過分析,首先開發出一種高低壓驅動路,高壓源是山升壓式dc - dc原理獲取的,低壓由蓄池本身提供,實現高壓強激和低壓維持的功能,路中採用源續柴汕機中卜軌知介系統的設訓及其七川j敝略的叭究路進行續,加誣了磁閥的關閉速;採用自舉吐路,降低了場應管對驅動壓的要求。
  4. The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance, it has longe - lived, low threshold current density, high efficiency, high luminosity and excellent monochromatic, coherence, directionality, etc. the high - power semiconductor laser is widely applied to the fields, such as military, industrial machining, communication, information processing, medical treatment, etc. the material ' s epitaxy is the foundation of the whole laser ' s fabricating, and it has important influence on the optics and electricity performance about the laser

    大功率半導體量子阱激光器是一種性能優越的發光器件,具壽命長、閾值低、率高、亮高以及良好的單色性、相干性、方向性等特點,廣泛應用於軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是整個激光器器件製作的基礎,對器件的光學和學性能著重要的影響,生長不出優質的材料體系,獲得高性能的器件就無從談起,因此,材料的外延生長便成為了整個半導體激光器製作過程之中的重中之重。
  5. The flow characteristics, distributions of current density and chemical components, and the performance of these two different designs are calculated and compared. the flow and mass transport characteristics are analyzed in detail, which indicate that strong forced convection is produced in the interdigitated flow field, which consist of dead - end gas channel that force the gases through the porous electrodes. results of comparison show that forced convection induced by the interdigitated flow field in the diffusion layer effectively enhances mass transport of reactants and products, thus leading to a higher cell performance and the limiting current density

    在傳統道設計的pemfc中,反應物從道到催化層的供應和生成物從催化層到道的排出主要是以擴散為主,而在交叉梳狀道設計中,以動帶動的對傳遞則占據了主導地位,而且這種以對為主的傳遞機理大大提高了反應物和產物傳遞速率,從而地改善了池的極限和極化性能等特性。
  6. According the key factors we find, we bring forward a new conception : multilevel suppressor and design a new high performance suppressor whose ion - exchange membrane has bigger areas and using three electrodes including one cathode ( anode ) and two anodes ( cathode ), at the same time we fill the suppression compartment with one kind of ion exchange resin which has moderate exchange capacity. according to our experiment ' s results, we find the new type suppressor has quite high working current efficiency and suppressing capacity. in most cases, the suppressor ' s current efficiency is over 90 % ; the suppressor can transform the naoh ( concentration : 200mmol / l, flow rate : i. oml / min, conductance : over 10000 i - i s cm " ) to pure water ( conductance : 8. 9 it s cm in chapter 3, the high performance suppressor is applied in determination some trace - amounts ions in plating solution, sewage. in this chapter, we also have a research on the gradient ion chromatography

    第二章首先以xyz - 1型化學抑制柱為例,分析了化學抑制柱的抑制過程得出影響抑制容量的主要因素主要是抑制柱的率和離子交換膜的極限,因此採用中等交換能力的離子交換樹脂作為抑制室的填料以提高率,在通常情況下率可達到90以上;在選用同種離子交換膜的前提下,可通過增加離子交換膜的面積達到提高極限的目的從而提高抑制柱的抑制容量,因此提出了多級抑制的概念並據此研製了共極式高容量化學抑制柱,該抑制柱最高可將速為1 . 0ml / min ,濃為200mmol / l導率超過10000 s ? cm ~ ( - 1 )氫氧化鈉溶液抑制為導率低至8 . 9 s ? cm ~ ( - 1 )的純水,並且具穩定性高、分析結果準確等優點。
  7. Through the analyzes of electromagnetic system of a axial symmetry by the method of electromagnetic vector potential, an eddy current field math model is build by triangle cell, this article has researched the effect of power frequency to eddy current density, penetration depth and the skin effect

    本文以磁場矢量位限元法為基礎對二維軸對稱場的磁場強、渦進行了計算求解,採用三角形單元和六面體單元建立了渦場數學模型,研究了源頻率對渦、透入深及集膚應等場量的作用影響。
  8. Seen from the experiment result, it is clear that the deposited coating obtained with the trivalent chromium electrodepositing method we use is smooth, homogeneous, dense, and has good unti - erosive ability, high stiffness. the color ol ihe deposited coaling ol irivalent chromium is similar with that of hexavalent chromium. further more, this process has a good ability of homogeneous and deep depositing with simple facility, high current efficiency, and wide working current flow and even more it avoids environmental pollution

    實驗結果表明,本文採用的三價鉻鍍鉻方法能鍍出鍍層光滑、均勻、緻、抗蝕性好、硬高的鍍層,而且解決了鍍層顏色的問題,使三價鉻鍍層不僅具現行六價鉻鍍層的天藍色光澤,同時還具率高、均鍍能力與深鍍能力好、工作寬、設備簡單、無環境污染等特點。
  9. Reasonable matching of wafer and wire : the advanced matching of wafer improves average voltage in electric field and current density of wafer corona, which the dedusting efficiency is higher

    板線匹配更合理。先進的板匹配,地提高了場平均壓和板,收塵率更高。
  10. However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down

    通過測試氫等離子體鈍化和氮化硅薄膜鈍化的果,實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯,但是這種提高作用與處理溫以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大;氨化硅薄膜中的氫對單晶硅的載子遷移率提高一定作用,但經過高溫處理后這種作用消失;氮化硅薄膜能提高單晶硅和多晶硅的少子壽命,具表面鈍化和體鈍化的雙重作用;氫等離子體和氮化硅薄膜都能地提高單晶和多晶池的短路,進而使不同程(絕對轉換率0
  11. This work studied the preparation process of aluminum coating and the factor of the properties of the aluminum coating such as processing condition, pre - treatment, electroplating system, current density, and current efficiency and electroplating time etc. it is shown that alcl3 + lialh4 organic solution system can be fabricated aluminum coating and processing parameter of having high reflectivity aluminum coating is obtained

    對鋁膜的制備工藝及影響鋁膜性能的因素如工藝條件、預處理過程、鍍液體系、率及鍍時間等進行了研究,確定了通過alcl _ 3 + lialh _ 4機溶液體系可用來鍍制鋁膜及獲得高反射率膜的工藝參數。
  12. Based on some discussions on the mathematic model set up for the cathodic protection potential field, a two - dimensional boundary element method ( bem ) is developed, and by using which, a study on the shielding effect resulted from some typical inner structures such as the reinforcing elements and the partition walls with man holes on distribution of potential and current density in the cathodic protection is performed. the investigated parameters which affect the shielding effect in the calculating model include : the height and thickness of the reinforcing elements, the distance between the anode and the reinforcing elements, and the diameter of man hole on the partition walls, and so on

    本文在討論了陰極保護位場問題的數學模型的基礎上,以二維邊界元法對陰極保護問題中的位及分佈進行了模擬計算,重點對船舶壓載艙中的典型結構如加強筋、人孔等在陰極保護中所產生的屏蔽應進行了分析和研究,通過對不同高、厚的擋板及不同孔徑的帶孔板所產生的屏蔽應進行模擬計算,首次得到了一些對實際工程設計具重要參考意義的見解。
  13. Through the analyses of electromagnetic system of configuration of hollow metal cylinder by electromagnetic vector potential, an eddy current field math model is built by triangle cell, this article has researched power frequency to eddy current density, permeation depth and the effect of skin effect

    文中通過對一個空心金屬圓筒結構的磁系統進行分析,以磁場矢量位限元法為基礎對磁場強、渦進行了計算求解,採用三角形單元建立了渦場數學模型,研究了源頻率對渦、透入深及集膚應等場量的作用影響。
  14. This article makes a numerical simulation and analysis of the skin effect of the downhole heating cable conductor by using the finite element method, thereby finds out the distribution characteristics of the current density of the cable, and indicates the effect of the frequency of alternating current on the skin depth

    摘要運用限元法,對交頻井下伴熱纜導體內部的集膚應現象進行了數值模擬和分析,比較直觀地得出交頻纜中的分佈特性,以及交的不同頻率對導體集膚深的影響。
  15. Increasing scale of integration and consumption of power has led to the significant increase in power densities encountered in modern electronic equipment. if we do not pay attention to the thermal management of electronic equipment, the large amount of heat generated by the electronic device would not be under the control. especially in some atrocious surroundings, some devices " working temperature would exceed the rated temperature limit and lead to deteriorate the system stabilization or even make the hole system disabled

    現代子設備的集成不斷提高、功耗不斷加大,使得熱急劇上升,如果我們在設計階段不注重子設備的散熱設計,那麼元件所產生的熱將得不到控制,特別是在工作環境比較惡劣或子設備比較復雜的情況下某些元件的工作溫可能上升到導致整個子系統的工作不穩定乃至失
  16. The results indicate that carriers recombining and causing luminescence in two organic layers by traversing their interface. the influence of barrier height of transport layer on current density, recombination current and recombination efficiency of the devices is great

    結果表明:雙層器件的發光是載子隧穿內界面后在兩機層中的復合發光,輸運層的勢壘高對載、復合以及器件的復合率影響很大。
  17. One of effective ways of overcoming space charge effect is to fill plasma in high power wave apparatus, by the neutralization between plasma and space charge, the transfer current is going to be largely enhanced, thereby out - power is going to be largely increased. meantime, due to there are many fluctuating modes in plasma, so it is able to bring a new beam - wave interaction mechanism, by it people can invent some new type high power microwave apparatus

    高功率微波裝置中的很大,空間應強烈,影響了功率的提高,克服空間應的方法是在高功率微波器件中填充等離子體,由於等離子體對空間荷的中和作用,傳輸會大大提高,從而大幅提高輸出功率,同時由於等離子體中存在多種波動模式,可能帶來新的注波互作用機制,發展新型的高功率微波器件。
  18. Current density doubles when the area of effective contact between tissue and electrode is halved, provided that hf current remains contant

    如果高頻保持不變,那麼人體組織和極之間的接觸面積減半將會使增大一倍,這將產生四倍的熱量。
  19. This results in a fourfold increase of heat ( correspondingly, heat drops by 75 % if current density is reduced by half, e. g. by doubling the effective electrode contact area

    相應地,如果將極接觸面積加大一倍,將減少一半,熱量則減少75 % 。
  20. For our laboratory is changing toward industrialization, a lot of work on conventional ingaas / gaas / algaas quantum well laser has been done. how the parameters, such as threshold current density, slope efficiency, fwhm and spectrum width, are influenced and how much the influence is, are discussed by the numbers. the effective means how to improve a certain performance parameter are purposed too

    由於本實驗室正處于由試驗研究向產業化邁進的階段,針對常規ingaas / gaas / algaas量子阱激光器做了很多工作,文中系統論述了常規量子阱激光器的各項性能參數?閾值、斜率率、遠場發散角、光譜線寬等的影響因素及改進的辦法,並針對激光器p ? i線性不好、遠場發散角出現多瓣的現象,通過理論分析找出原因所在並進行了改進,解決了以上問題。
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