有缺陷硅 的英文怎麼說

中文拼音 [yǒuquēxiànguī]
有缺陷硅 英文
defective silicon
  • 有 : 有副詞[書面語] （表示整數之外再加零數）: 30 有 5 thirty-five; 10 有 5年 fifteen years
  • 缺 : Ⅰ動詞1 （缺乏; 短少） be short of; lack 2 （殘缺） be missing; be incomplete 3 （該到而未到） be ...
  • 陷 : Ⅰ名詞1 （陷阱） pitfall; trap2 （缺點） defect; deficiency Ⅱ動詞1 （掉進） get stuck or bogged do...
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 缺陷 : defect; fault; faultiness; vitium; lesion; flaw; disorder; imperfection; drawback; blemish
  1. But high strength concrete has many defects itself. mainly foy : with higher strength be much fragility ; the final strength increments are smaller for high volume silica - ash concrete ; because high strength concrete ’ s self - shrinkage is large, so the deformation performance is much severely with the strength increments

    而高強混凝土又有其自身缺陷，主要是:強度越高，脆性越大;摻入硅灰量大的高強混凝土，後期增長減小;由於高強混凝土自收縮大，因而變形性能也隨強度等級的提高而變得嚴重。
  2. As one kind of si nanostructures, si - rich si02 films are the important si - based light - emitting materials. moreover, silicon is the leading semiconductor in the microelectronic industry. furthermore si02 films as passitive and insular layers are widely used in si device and integrated circuit. so si - rich films are considered suitable for optoelectronic applications

    另一種觀點認為納米硅薄膜中的可見光發射來自界面或介質層中的發光中心。還有人認為對于鑲嵌在sio _ 2中的納米晶粒來說，與氧有關的缺陷可能是導致可見光或藍綠光發射的主要原因。
  3. It is possible to draw fibres of an aluminoborosilicate glass without defects.

    可以拉制沒有缺陷的鋁硼硅酸鹽玻璃的纖維。
  4. Continuous carbon fiber reinforced silicon carbide ceramic matrix composites ( cysic ) are considered as the most promising thermal structural candidate materials for aerospace, energy and nuclear technologies etc. as a key technology for improving high - temperature structural applications of the materials, oxidation protection with anti - oxidation coating system had being paid more and more attentions

    連續碳纖維增強碳化硅陶瓷基復合材料（ c sic ）是一種極具潛力的高溫結構復合材料，在航空航天、能源及核技術等領域有著廣闊的應用前景。為了推進材料的高溫應用，對防氧化塗層已開展了廣泛的研究，但是對目前廣泛採用的cvdsic塗層的缺陷控制鮮有研究。
  5. With the development of vlsi ( very large scale integration ) and ulsi ( ultra large scale integration ), rtp ( rapid thermal process ), which consumes less time and less energy than classical thermal treatments, have been widely employed in semiconductor manufacturing. however, the most importance is that rtp is applied for defects engineering of silicon material. it is generally believed the rtf leads to the injection of additional vacancies into silicon wafer, and then a so - called magic denuded zone ( mdz ) in the near - surface region of cz silicon wafer was formed by controlling the vacancy distribution

    隨著大規模集成電路（ vlsi ）和超大規模集成電路的發展，節省時間、節省能量、容易控制的快速熱退火工藝在半導體器件製造工藝中得到了廣泛的應用，並且在硅材料的缺陷工程中發揮了特殊的作用，人們通過高溫快速熱處理在矽片中引入空位，並控制空位的分佈，進而形成了具有較強內吸雜能力的潔凈區。
  6. A defect model is suggested to account for the pl of sintered psc

    發光峰的強度隨著燒結時間的增加略有下降，多孔碳化硅的發光來自於缺陷態。
  7. Heavily as - doped silicon substrates are adopted by many device manufactories because of higher as - doping density. therefore, quantitative determination of oxygen precipitation and induced - defects in heavily as - doped silicon is important to the realization of ig

    重摻砷硅襯底片正日益受到器件廠家的青睞，所以研究重摻砷硅單晶中的氧沉澱及誘生缺陷對實現重摻襯底的內吸除有重大意義。
  8. For the substrate of heavily boron doped wafer, it has been proved that oxygen concentration is increased and oxygen precipitation is enhanced by hb ( heavily boron - doping ) during crystal growth, which is beneficial for ig and therefore improve the yield of ulsi

    另一方面，在相同的晶體生長條件下，重摻硼硅單晶氧含量升高，氧沉澱被增強，能形成有效吸雜點，提高矽片機械強度，抑制void缺陷，有利於提高ulsi的成品率。
  9. After annealing at 600, because of formation of multi - vacancy - type defects that have long positron lifetime, positron annihilation average lifetime increased. when the average positron lifetime increased to maximum value ( 360ps ), the interstitial oxygen concentration decreased to minimum value ( 4 1017atoms / cm3 ). this result suggested that oxygen was involved in the formation of multi - vacancy - type defects

    正電子湮沒技術測試證明，快中子輻照直拉硅中在大約600退火時產生的多空位缺陷具有較長正電子壽命，可以使正電子平均壽命增加，當樣品的正電子平均壽命達到最大時（ 360ps ） ，其間隙氧含量降到一個極小值（ 4 10 ~ （ 17 ） atoms / cm ~ 3 ） ，這說明氧參與了這些缺陷的形成。
  10. Many factors which affect the epitaxy qualities, especially the porosity of porous silicon and growth temperature, have been studied in detail. it is found that the pre - oxidation of porous silicon can efficiently prevent the boron diffusion during epitaxy. the defaults along { 111 } are the main defects in epitaxial silicon layer

    深入研究了影響外延的各種因素，特別是多孔硅的孔隙率和外延溫度對外延層質量的影響，發現多孔硅的預氧化可以有效地阻止外延時b的擴散，外延層中主要的缺陷是沿著{ 111 }面生長的層錯。
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