材積生長 的英文怎麼說

中文拼音 [cáijīshēngzhǎng]
材積生長 英文
growth in volume
  • 材 : 名詞1 （木料） timber 2 （泛指可以直接製成成品的東西; 材料） material 3 （供寫作或參考的資料） ma...
  • 積 : Ⅰ動詞（積累） amass; store up; accumulate Ⅱ形容詞（長時間積累下來的） long standing; long pending...
  • 生 : Ⅰ動詞1 （生育; 生殖） give birth to; bear 2 （出生） be born 3 （生長） grow 4 （生存; 活） live;...
  • 長 : 長Ⅰ形容詞1 （年紀較大） older; elder; senior 2 （排行最大） eldest; oldest Ⅱ名詞（領導人） chief;...
  • 生長 : grow; grow up; ascent; merisis; build up; auxesis; increment; overgrowth; gain; burgeon; bourgeon...
  1. This paper gives a survey on experimental forestland. 25 tree species were selected, and arranged in order by average diameter at breast height, average height, average individual volume and annual average volume increment in a unit area in this experiment

    摘要簡要介紹了試驗林地的概況，選擇了25個樹種進行試驗，並按各樹種林分平均胸徑、平均樹高、平均單株材積和平均單位面積蓄積的年平均生長量進行排序。
  2. Gaas / algaas quantum well photodetectors ( qwips ) are new type devices and progressed rapidly in recent 20 years. qwips utilizing intersubband absorption between gallium arsenide ( gaas ) well and aluminum gallium arsenide ( alxga1 _ xas ) barriers were perfected. therefore, the ability to accurately control the band structure and hence the spectral response, as well as both established technology for growing and processing gaas optical devices and commercially available large area vlsi gaas ic ' s, makes gaas / algaas qwips attractive devices for use in very large focal plane arrays ( fpas ), especially available in the range of long wavelength 8 - 12 urn

    Gaas algaas量子阱紅外探測器（ qwips ）是近二十年來迅速發展起來的一種新型紅外探測器，它成功地利用了gaas勢阱和al _ xga _ （ 1 - x ） as勢壘之間的子帶間吸收，使之具有能帶結構可精確設計從而獲得指定光譜響應的特點，加之成熟的材料生長技術、器件工藝，以及商業上可獲得大面積的vlsigaas集成電路，使得gaas algaasqwips尤其適宜製作8 12 m長波范圍的大面陣探測器。
  3. Measuring log volume is always a key part in many departments, such as forest industry

    原木材積的測量一直是林業部門生產的一個關鍵環節，長期以來使用人工檢尺的方法。
  4. 3 the influence of water on vegetation growth : ( 1 ) soil water shortage refrains the height, basal diameter and stock of trees

    3土壤水分對林分生長的影響： （ 1 ）土壤水分虧缺嚴重製約著樹高、胸徑和材積的生長。
  5. Through the multi - character correlation degree analysis of p. massoniana family, 37 families whose volume growth was high and whose fruit - bearing character was good, 10 families whose volume growth was moderate and whose fruit - bearing character was good as well as 7 families whose volume growth was high and whose fruit - bearing character was moderate were selected

    通過馬尾松家系多性狀的關聯度分析，評選出材積生長量高且結實性狀好的家系37個，材積生長量中等且結實性狀好的家系10個，材積生長量高且結實性狀中等的家系7個。
  6. The experimental results show that the characters of tree height, dbh, and volume, etc. of every family progenies of pinus massoniana seed orchard are all evidently higher than those of control ( ck ), 7 fine family materials whose volume growth exceeds the control ' s by 50 % are totally selected as the materials for building p. massoniana improved seed orchard and industrial raw material forest

    摘要對漳平五一國有林場馬尾松種子園18個初選家系進行子代測定，採用隨機區組設計、 8次重復，對6年生的樹高、胸徑、材積等性狀進行測定，試驗結果表明：馬尾松種子園各家系子代均明顯高於對照（ ck ） ，共選出7個優良家系材積生長超過對照50 %以上材料，作為營建馬尾松改良種子園和工業原料林的材料。
  7. A survey of literature shows that little study has been done on uptake of pollutants by plants from the polygonaceae, and that the reports about their physiological and biochemical characteristics under heavy metal stress were sporadically seen. a batch of sand culture and soil culture experiments were carried out to investigate heavy metal and radiocesium uptak e and accumulation by rumex acetosa linn, polygonum microcephalum d. don, and rumex hastatus d. don widely distributed on copper mining areas, and their physiological and biochemical characteristics under cu zn stress, as well their potentials in application to phytoremediation

    本論文以廣泛生長于銅礦區的蓼科植物酸模、小頭蓼和戟葉酸模為試驗材料，運用砂培、土培等方法，研究它們對重金屬（ cu 、 zn ）以及放射性核素（ ~ （ 134 ） cs ）的吸收和積累特性以及cu 、 zn脅迫條件下它們的生理生化特徵，初步探討它們在無機污染物污染土壤植物修復中的應用潛力。
  8. The researchers say growing stock increased in twenty - two of the fifty countries. and, in about half of the fifty, biomass and carbon storage also increased

    研究者稱，在50個國家中有22個國家的立木材積量在不斷增長。另外，約有一半的國家生物量和碳貯存量仍在增長。
  9. This kind of cai made the students have few chances to take part in the teaching activities and accept them passively. it was difficult for students to study actively and positively and no good nurturing people with creative ability

    按這樣的理論設計的cai ，學生參與教學活動的機會少，大部分時間處于被動接受狀態，學生的主動性、積極性很難發揮，更不利於創造型人材的成長。
  10. Through the stand investigation by setting up the sample site, the investigation results showed that the average dbh of 15 - year - old alniqhtllm fortunei planted under nature was 60 % larger than that of 17 - year - old pinus massoniana plantation under the same condition, the average tree height of the above was 38 % larger than that of the latter, the average single - tree volume of the above was 3. 2 times higher than that of the latter, the above showed the absolute dominance in stands

    摘要設立標準地進行林分調查，在標準地中選取擬赤楊標準木進行樹干解析，採用生長對比方式分析擬赤楊在馬尾松人工林中的生長情況，調查結果表明，在同一環境條件下， 15年生天然下種的擬赤楊比17年生馬尾松人工林平均胸徑大60 % ，平均樹高高38 % ，平均單株材積大3 . 2倍，在林分中表現出絕對優勢。
  11. We successfully make the nanosized diamond particles calculated on the cathode and get the composed materials by electrophoretic method. comparing to the pecvd method by which people make the cnt and nanocrystal diamond grow currently on the same substrate, it ’ s more simple, economic and easy to control. the main jobs are followed : 1

    實驗中採用電泳的辦法，將金剛石超微粉沉積到陰極基片上，從而制備出合成材料，此種辦法與通過pecvd方法實現基片上碳納米管與金剛石超微粉的合成材料的生長相比，更加經濟，簡單與實用，並且更加容易控制。
  12. Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth

    文摘:在成功地外延生長超導、鐵電、鐵磁等多種性質的鈣鈦礦結構氧化物薄膜的基礎上，討論影響氧化物薄膜外延生長的一些因素.考慮到相形成和薄膜生長動力學，在利用脈沖激光淀積法外延生長氧化物薄膜中襯底溫度是十分重要的工藝參數.襯底溫度對成相和生長薄膜的取向都有影響.考慮到薄膜是首先在襯底表面成核、成相併生長.因此襯底材料晶格的影響是不容忽視的.觀察到襯底材料對薄膜外延生長溫度的影響.在適當的工藝條件下，利用低溫三步法工藝制備得到有很強織構的外延薄膜.這突出表明界面層的相互作用對鈣鈦礦結構薄膜的取向有著相當大的影響
  13. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  14. Main research contents and achievements of this thesis is as follows : l. this paper carries through particular test and analysis to the basic physical - chemical properties of gaojiawang palygorskite, an environmental mineral fibre, by xay, ir, tem, sem etc. this paper has also discoursed upon the development appliance research status in quo and directions of palygorskite. 2. according to the preceding surface modification research achievements to nonmetal mineral materials, the author combines the self characteristics of palygorskite such as the ratio of length and diameter, typical nano - rank particle diameter, big ratio surface area, well - developed crystal growth imperfection and lattice defect etc. the author also designs organising modification ortho - experimentation of palygorskite by adopting iso - propyl alcohol as thinner of wd - 51 and ndz - 401, and acquires the best craft parameters and craft conditions for gaojiawang palygorskite original ore organising modification, namely : wd - 51 concentration 1. 6 % ( wt % ), modification temperature 120 ?, and modification time 60 mins ; ndz - 401 concentration 2. 0 % ( wt % ), c modification temperature 120, modification time 80 mins

    在前人對非金屬礦物材料表面改性的基礎上，結合環境礦物纖維?坡縷石自身的特點（如：長徑比、典型的納米粒徑、大比表面積、發育的晶體生長缺陷和晶格缺陷等） ，通過對坡縷石有機化改性設計正交試驗，採用（ ch _ 3 ） _ 2choh作為稀釋劑，獲得了採用wd - 51和ndz - 401對高家窪坡縷石原礦進行有機化改性的最佳工藝參數和工藝條件，分別為： wd - 51的濃度為1 . 6 （ wt ） ，改性溫度為120 ，改性時間為60min ； ndz - 401的濃度為2 . 0 （ wt ） ，改性溫度為120 ，改性時間為80min 。
  15. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  16. Two callus lines jsa10 and jsa25 were established and the former was used to investigate the factors regulating callus growth and pigmentation

    並以jsa10為試驗材料，就影響愈傷組織生長和花色素苷積累的條件進行了篩選。
  17. Refers to total stock volume of wood growing in forest area, which shows the total size and level of forest resources of a country or a region

    指森林面積上生長著的林木樹乾材積總量，是反映一個國家或地區森林資源總規模和水平的重要指標。
  18. Pt and ybco are the top electrode and the bottom electrode separately. ybco thin film is deposited on the substrate by pulsed laser deposition ( pld ). and pzt thin film is epitaxially deposited on the bottom electrode also by pld

    實驗中薄膜樣品的結構為pt pzt ybco lao ， lao為基底材料， pt和ybco分別為pzt薄膜的上電極和下電極， ybc0薄膜用脈沖激光濺射（ pld ）工藝沉積在基底上， pzt薄膜同樣用pld工藝外延生長在下電極ybc0薄膜上。
  19. In order to otain high quality zno thin films, we, for the first time, employ the plasma enhanced chemical vapor deposition ( pecvd ) to prepare high quality zno thin film at low temperature using a zinc organic source ( zn ( c2h5 ) 2 ) and carbon dioxide ( co2 ) gas mixtures. the effects of the growing condiction and the native oxide layer of si substrate on the quality of zno thin films was studied in detail. to prepare p - zno and overcome the dufficulty of reverse due to the interaction between the n atomic, we obtain high qulaity p - zno by a easy way of thermal zn3n2

    為了在低溫下制備高質量的氧化鋅薄膜，我們採用金屬有機源和二氧化碳氣源，首次利用等離子體增強化學氣相沉積的技術在低溫下制備了高質量的氧化鋅薄膜，系統地研究了生長條件以及襯底表面氧化層對薄膜質量的影響，確定了生長高質量氧化鋅薄膜的優化條件；為獲得p - zno材料，克服在zno中摻n雜質間相互作用影響摻雜效率不易獲得p - zno的困難，我們通過熱氧化zn3n2的方法制備了p - zno ，獲得了一系列研究結果： 1 、詳細研究了氣體流速比，襯底溫度和射頻功率實驗參數對氧化鋅薄膜特性的影響。
  20. The analytic results of the effects on the micromorphological structure of the film by the electrochemical condition ' s showed that the carbon is apt to improve the boundary combination between the scfs and the surface of the cathode and the seperation of the films, and that the micromorphological structure of the mpgcfs is greatly affected by the dring and the power voltage, which remarkably affluence ion move in swelling cathode film, and that higher temperature and concentration of cu2 + in the medium solution are also advanagable to the deposition of cu in scfs. the plot of deformation behavior of mpgcfs showed that the maximum strench ratio decreases and the brittleness increases due to the existence of the metal phase, and that the strengh trend of the composite films is fistly up and down followed with the content of metal phase because of the change of the role of the metal phase from acting as the physical cross - linking to weakening the films due to destroying the whole structure of the polymer

    另外它作為基體的另一個突出的優點是制備的溶脹復合膜（ scf ）中的溶劑與電解液中的溶劑相同都是水，克服了以前膜內外不同溶劑之間擴散的問題，結果使得電流最終趨於一種穩態，因此可以更好實現用電化學條件來控制mpgcf的形態結構；硬質石墨材料的多孔的結構和石墨本身的結構性能特點使得碳作為陰極材料時有利於溶漲復合膜（ scf ）與電極表面的結合以及膜的剝離，因此是作為陰極的理想材料；電化學條件中的乾燥程度和電壓能夠明顯的影響離子在膜內的遷移，從而對mpgcf的形態結構造成較大的影響；而提高反應溫度和增大電解液中銅離子的濃度也有利於銅在膜中的沉積生長。
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