束縛激子 的英文怎麼說

中文拼音 [shùfújīzi]
束縛激子 英文
bound exciton
  • 束 : Ⅰ動詞1 （捆; 系） bind; tie 2 （控制; 約束）control; restrain Ⅱ量詞（用於捆在一起的東西） bundle;...
  • 縛 : 動詞（捆綁） bind; tie up
  • 激 : Ⅰ動詞1 （水因受到阻礙或震蕩而向上涌） swash; surge; dash 2 （冷水突然刺激身體使得病） fall ill fr...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 束縛 : tie; bind up; fetter; bound; constrain; rigid control; trammel
  1. Exciton - phonon coupling of nn3 center in heavily nitrogen doped gap

    3束縛激子與聲子的耦合
  2. Bound exciton state

    束縛激子態
  3. Effects of hydrogenic donor impurity position on the binding energy of a bound exciton in - nitrides quantum dots

    族氮化物量子點中類氫施主雜質位置對束縛激子結合能的影響
  4. The isoelectronic system of gap : n has been investigated extensively in the dilute limit since 1965. thomas et al identified that a series of sharp emission lines in gap : n were due to the recombinations of excitons bound to either isolated nitrogen centers or various nitrogen pair centers

    這些譜線來自於等電子雜質n形成的束縛激子態（孤立n中心和nn _ i對）輻射復合產生的零聲子線及其聲子伴線。
  5. Finally, the atomic coherent population trapping is studied in a multilevel laser - induced continuum structure system including cascade two - photon processes by means of quasi - classical theory. the condition leading to the atomic coherent population trapping and the dark state are given explicitly. the effects of atomic initial state and the laser intensity on the populations distributed in the atomic bound states are discussed

    我們還運用準經典理論研究了含級聯雙光子過程的多束縛態激光場誘導原子連續態結構系統中原子布居數的相干俘獲，給出了產生相干俘獲的條件及暗態的表達式，討論了原子初態和激光強度對原於布居數的影響，揭示了原子相干對穩定rydberg原子的重要作用。
  6. Zinc oxide ( zno ) is a wide band - gap semiconductor, 3. 37 ev at room temperature, with the high exciton binding energy of 60 mev

    Zno是一種寬帶隙半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。
  7. Dongxu zhao ( condensed matter physics ) directed by prof. dezhen shen and prof. yichun liu zinc oxide ( zno ) is a wide band - gap semiconductor ( 3. 37 ev at room temperature ) with the high exciton binding energy of 60 mev

    = zno是一種寬帶隙的半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。
  8. In low - dimension structure, the exciton binding energy will be lager than bulk material because of quantum effects, so excitons play an important role in optical characteristics of low - dimension zno

    在低維結構中，由於量子限制效應，激子束縛能會變得更大，因而在低維zno材料中，激子發光在其光學特性中起著舉足輕重的作用。
  9. Due to the large exciton binding energy of 60mev, which ensures the high efficient excitonic emission at room temperature, it is regarded as one of the most promising materials for fabricating efficient ultraviolet ( uv ) and blue light emitting devices

    由於氧化鋅具有較高的激子束縛能（ 60mev ） ，保證了其在室溫下較強的激子發光，因而被認為是製作紫外半導體激光器的合適材料。
  10. Zinc oxide ( zno ) is an important wide band gap ( eg = 3. 37ev ) semiconductor materials, its exciton binding energy is 60mev. these characters make it is expected to be applied in the ultraviolet optoelectronic devices which can be operated at room temperature

    氧化鋅（ zno ）是一種重要的寬禁帶（ eg = 3 . 37ev ）半導體材料，其激子束縛能高達60mev ，在室溫紫外光電器件方面有巨大的應用潛力。
  11. This direct band - gap material has a large exciton binding energy ( 60mev ), which permits excitonic recombination even at room temperature. thus zno is attracting much attention as promising candidates for optoelectric applications in visible and ultraviolet regions

    它有較高的激子束縛能（常溫下為60mev ） ，使得其在室溫下可以發射紫外激光，因此作為新一代的半導體發光材料受到廣泛關注。
  12. We obtained a high quality zno thin film with the pl fwhm of 94 mev at 900. the free exciton binding energy deduced from the temperature - dependent pl spectra is about 59 mev at 900, suggesting that the film quality can be improved by annealing process

    當退火溫度為900時獲得了高質量的氧化鋅薄膜，光致發光譜的半高寬為94mev ，通過變溫實驗得到激子束縛能為59mev ，表明退火過程提高了薄膜的質量。
  13. Zno film is a novel - direct compound semiconductor with wide band gap energy of 3. 37ev and a exciton binding energy 60mev at room temperature. due to its the prerequisite for visible or ultraviolet light emission at room temperature, it has the tremendous potential applications for ultraviolet detectors, leds, lds. zno thin film is used widely and effectively in the fields of surface acoustic wave devices, solar cell, gas sensors, varistors and so on because of its excellent piezoelectrical performance

    室溫下禁帶寬度為3 . 37ev ，激子束縛能為60mev ，具備了室溫下發射紫外光的必要條件，在紫外探測器、 led 、 ld等領域有著巨大的發展潛力； zno薄膜以其優良的壓電性能、透明導電性能等使其在太陽能電池、壓電器件、表面聲波器件、氣敏元件等諸多領域得到廣泛應用。
  14. In 1990s, a calculation of the ground - state energy of an exciton confined in a cylindrical quantum wire in the presence of a uniform magnetic field is reported as a function of wire radius, using a variational approach by gang li, spiros v. branis and k. k. bajaj. a. balandin and s. bandyopadhya present variational calculations of the ground - state exciton binding energy and exciton radius in a quantum wire subjected to an external magnetic field. these studies have been primarily responsible for our current understanding of the nature of excitonic states in a quantum wire subjected to an external magnetic field

    九十年代中期，人們就開始了關于在外加磁場時量子線中激子特性的研究， gangli ， spirosv . branis和k . k . bajaj利用變分法，對于圓柱形的量子線中激子的基態束縛能進行了計算，發現對於一個給定的磁場值，激子的基態束縛能比不加磁場時變大。
  15. When x is above 1. 3 %, the emission spectra are strongly broadened and do not show any well - defined features, and their peak positions shift to lower energies correspondingly with increasing x. the large band - gap bowing of gap1 - xnx alloy is induced by the impurity band formation due to the intercenter interaction

    對中心發光的nn3束縛激子的零聲子線及其聲子伴線，並得到了nn3的所有聲子伴線（ l0 、 la 、 ta ）的s因子在約20k卜50k范圍內與溫度的關系。
  16. Zno is a directed band semiconductor with a big binding energy. it has gained substantial interest because its large exiton binding energy ( 60mev ), which could lead to lasing action based exiton recombination even above room temperature, such as led, ld and so on

    Zno是一種寬禁帶的直接帶隙半導體材料，具有非常高的激子束縛能（ 60mv ） ，即使在室溫條件下激子也不會分解，因此可以被用作光發射器件，如led和ld等。
  17. We process calculations as the following : we calculate the binding energies of excitons in a square quantum - well wire in presence of a magnetic field for finite and infinite potential barrier case respectively

    A . balandin和s . bandyopadhyay也是利用變分法，採用二能帶模型計算了在外加磁場時的量子線中激子的基態束縛能。
  18. In 1985, takeshi kodama et al. [ 12 ] expressed the wavefunction as the combination of the function of the single electron in a one - dimensional square well with the finite barrier to calculate the binding energies of the exciton. this form does n ' t satisfy the continuity of the function and of its derivative divided by the band - mass

    1985年， takeshikodama等人在計算激子的束縛能時把單電子的波函數（ x ， y ）取為一維有限深方形量子阱中波函數的乘積，這種取法在邊界上不滿足波函數的連續性條件及粒子流（ 1 / m ~ * ） ' （ x ， y ）的守恆條件。
  19. Due to the large exciton binding energy of 60mev, which ensures the high efficient excitonic emission at room temperature, it is regarded as one of the most promising materials for fabricating efficient ultraviolet ( uv ) and blue light emitting devices. since the first observation of the stimulated ultraviolet emission at room temperature, zno has become another hotspot in the region of uv light emitting researching

    氧化鋅在室溫條件下具有較高的激子束縛能（ 60mev ） ，保證了其在室溫下較強的激子發光，是製作紫外光電子器件的合適材料，自1997年首次發現zno室溫紫外受激發射以來， zno研究已成為繼gan之後紫外發射材料研究的又一研究熱點。
  20. Zinc oxide as a wide band - gap ( 3. 3ev ) compound semiconductor with wurtzite crystal structure, is gaining importance for the possible application as a semiconductor laser, due to its ultraviolet emission at room temperature

    寬禁帶zno半導體為直接帶隙材料，具有六方結構，較高的激子束縛能（ 60mev ） ，室溫下帶隙寬度為3 . 3ev 。
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