柵極電容 的英文怎麼說
中文拼音 [zhàjídiànróng]
柵極電容
英文
grid capacitance-
This article introduces briefly the process of design and characteristic of structure of db930 tube and discusses the main problems of technology and technique which was met during the manufacture and the measures having been adopted are emphatically. it discusses the solve measures in following six aspects : the filament current is too large, carbon deposits during the carbonizing of cathode, the capacitance between the first grid and the second grid is too large, transpiring happens inside the tube, the insulation resistance between the electrodes is too lower when the filament is on and the ability of bearing high voltage is too lower
本文簡略地介紹了db930的設計過程及其結構特點，重點論述了在試制過程中遇到的主要工藝技術問題及解決問題的措施，圍繞解決燈絲電流大、陰極碳化時積碳、一柵和二柵之間的電容大、管內蒸散、熱態時極間絕緣低、耐高壓的能力差等六個方面的問題進行了論述。Capacitive grid current
柵極電容電流Grid filament capacitance
柵極燈絲電容It is believed that p - si tft will be the main type in the future panel display. among the process of manufacture p - si tft, the source and drain will have the superposition with grid for the reason of machine ’ s alignment error. the superposition will bring superposition capacitance and it will badly cut down the electric performance
在制備多晶硅tft時，由於機器的套準誤差會在柵極與源、漏極之間產生重疊部分，這樣就造成了柵源、柵漏之間的交疊電容，交疊電容的存在嚴重影響了多晶硅tft的性能，而利用自對準工藝制備的多晶硅tft則避免了交疊電容的產生。Xing su ( microelectronics and solid state electronics ) directed by prof. lin chenlu the fast development of information technology requires integrated circuit to be greater integrated, faster functioned, and lower power - consumed, that lead to continuous shrinkage of mos and dram feature size. and under this trend the thickness of mos gate dielectrics ( sio2 ) would soon scale down to its physical limit
日益增長的信息技術對更高集成度、高速、低功耗集成電路的需求，驅使晶體管的尺寸越來越小，隨之而來的問題是作為mos柵氧化物和dram電容介質的sio _ 2迅速減薄，直逼其物理極限。The lna with source inductor degeneration is analyzed in detail, which is used most widely in current. base on the analysis, a cascode structure is presented to minimize the effect of gate - drain capacitance cgd
針對目前lna中應用最廣泛的源極電感負反饋結構，進行了詳細分析，在此基礎上對該結構做出了優化，採用共源共柵級聯結構，減小了柵漏電容cgd的影響。Finally the method of preparation of p - si tft and some useful dates were given. the dissertation includes seven chapters. the first chapter introduces the development of tft ; the second chapter introduces the principle of tft and its structure ; the third chapter provides the reason of superposition capacitance between s, d and gate ; the fourth chapter introduce the deposition and test method of sinx ; the fifth chapter introduces the fabrication of p - si ; the sixth chapter studies the fabrication techniques of p - si tft and some parameters ; the seventh chapter is a conclusion of the research
本文一共分為七章:第一章介紹了本論文的研究背景、研究意義、主要工作以及國內外的研究進展;第二章介紹了tft的結構和工作原理;第三章介紹了柵極與源、漏極之間疊加電容產生的原因和自對準工藝;第四章介紹了氮化硅的制備方法和測試方法;第五章介紹了多晶硅tft有源層的制備方法並對各種晶化機理做了介紹;第六章主要對利用自對準工藝制備tft的工藝進行研究，並對制備出來的樣品進行了測試;第七章對全文進行總結。Grid input capacitance
柵極輸入電容Lead acid batteries - stationary vented batteries with positive grid plates - rated capacities, main dimensions, weights
鉛酸蓄電池.帶正柵極板的固定式通風蓄電池.額定電容This paper has designed a inverter power supply of volume 2kva, working frequency 20khz., based on that has analyzed the characteristic of igbt ( insulated gate bipolar transistor ). it was provided the working theory of dc voltage circuit and bridge type invert circuit
本文在分析了igbt （絕緣柵雙極晶體管）特性的基礎上，設計了一臺容量為2kva 、頻率為20khz的高頻逆變電源。分享友人