柵負壓 的英文怎麼說
中文拼音 [zhàfùyā]
柵負壓
英文
negative grid voltage-
By comparing and analyzing the advantages and disadvantages of three kinds of voltage reference circuits, type of current density ratio compensation 、 weak inversion type and type of poly gate work function, a cascode structure of type of current density ratio compensation is chosen to form the core of voltage reference circuit designed in this paper. applying the negative feedback technology, an output buffer and multiply by - 2 - circuits are designed, which improve the current driving capability
然後通過比較和分析電流密度比補償型、弱反型工作型和多晶硅柵功函數差型三種帶隙電壓基準源電路結構的優缺點，確定了電流密度比補償型共源共柵結構作為本設計核心電路結構，運用負反饋技術設計了基準輸出緩沖電路、輸出電壓倍乘電路，改善了核心電路的帶負載能力和電流驅動能力。Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet
基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高In this paper, the theory of negatively charged surface states is used to investigate dynamic breakdown characteristics and the increase of gate - drain breakdown voltage as well as the reduction of saturated drain - source current after sulfur passivation. the measure which can improve the stability of sulfur passivation is proposed
本論文通過對gaasmesfet擊穿機理和硫鈍化機理的研究，用負電荷表面態理論，解釋了gaasmesfet動態擊穿特性及硫鈍化后柵漏擊穿電壓增大、源漏飽和電流減小的機理，提出了改善硫鈍化穩定性的措施。The thesis has done the widespread investigation and study to the domestic and foreign ’ s technologies of analogy low voltage and low power, and analyzes the principles of work, merts and shortcomings of these technologies, based on the absorption of these technologies, it designs a 1. 5v low power rail - to - rail cmos operational amplifier. when designing input stage, in order to enable the input common mode voltage range to achieve rail - to - rail, it does not use the traditional differential input pair, but use the nmos tube and the pmos tube parallel supplementary differential input pair to the structure, and uses the proportional current mirror technology to realize the constant transconductance of input stage. in the middle gain stage design, the current mirror load does not use the traditional standard cascode structure, but uses the low voltage, wide - swing casecode structure which is suitable to work in low voltage. when designing output stage, in order to enhance the efficiency, it uses the push - pull common source stage amplifier as the output stage, the output voltage swing basically reached rail - to - rail. the thesis changes the design of the traditional normal source based on the operational amplifier, uses the differential amplifier with current mirror load to design a normal current source. the normal current source provides the stable bias current and the bias voltage to the operational amplifier, so the stability of operational amplifier is guaranteed. the thesis uses the miller compensate technology with a adjusting zero resistance to compensate the operational amplifier
本論文對國內外的模擬低電壓低功耗技術做了廣泛的調查研究，分析了這些技術的工作原理和優缺點，在吸收這些技術成果基礎上設計了一個1 . 5v低功耗軌至軌cmos運算放大器。在設計輸入級時，為了使輸入共模電壓范圍達到軌至軌，不是採用傳統的差動輸入結構，而是採用了nmos管和pmos管並聯的互補差動輸入對結構，並採用成比例的電流鏡技術實現了輸入級跨導的恆定;在中間增益級設計中，電流鏡負載並不是採用傳統的標準共源共柵結構，而是採用了適合在低壓工作的低壓寬擺幅共源共柵結構;在輸出級設計時，為了提高效率，採用了推挽共源級放大器作為輸出級，輸出電壓擺幅基本上達到了軌至軌;本論文改變傳統基準源基於運放的設計，採用了帶電流鏡負載的差分放大器設計了一個基準電流源，給運放提供穩定的偏置電流和偏置電壓，保證了運放的穩定性;並採用了帶調零電阻的密勒補償技術對運放進行頻率補償。The chip is accomplished in the full cooperation with other team members, the author pays particular attention to the analysis of the whole chip architecture and three sub - block design : transconductance amplifier ( ota ), voltage reference and current reference. based on existed technologies, a new high order temperature compensated voltage reference and a creative current reference with high order temperature compensation are shown respectively. the author simulated all the sub - block and whole chip by hspice
該晶元的設計是由小組成員共同完成，本人主要負責了總體電路的分析、聯合模擬驗證及以下三個子電路的設計: 1 、跨導放大器，詳細分析了bandgap跨導放大器輸入級的動靜態特性及其優缺點，並結合系統要求，設計了一種與cmos工藝相兼容、可替代bandgap跨導放大器的低壓共源共柵跨導放大器。Namely, the electric field at the drain - side edge of the gate decreases with the increasing of negative charge density in the surface, so the breakdown voltage of gaas mesfet ' s will increase
表面受主態的增多使表面負電荷密度增大，表面聚集的負電荷可以分散漏側柵邊緣處的電力線密度，減弱了柵靠漏一側的電場強度，擊穿電壓提高。分享友人