橫向電阻 的英文怎麼說

中文拼音 [héngxiàngdiànzǔ]
橫向電阻 英文
transverse resistance
  • 橫 : 橫形容詞1. （蠻橫; 兇暴） harsh and unreasonable; perverse 2. （不吉利的; 意外的） unexpected
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 阻 : 動詞（阻擋; 阻礙） block; hinder; impede; obstruct
  • 橫向 : broadwise; infeed; crossrange; abeam;transverse; transverse direction; cross; crosswise; lateral;...
  • 電阻 : （物質阻礙電流通過的性質） resistance; electric resistance （電路中兩點間在一定壓力下決定電流強度...
  1. Variation ratio of dimensional after water rinse, ultimate strength, neps and pile, tearing resistance, bursting strength, joint strength, commissure ' s swerve strength, fabric shift ( slip ), ventilate degree, elasticity ( resilient rate / deformation rate ), anti - water permeability ( hydrostatic pressure ), extension and resilience, abrasive resistance, gets wet the nature, hydroscopicity, stock ' s transverse ductility, fire resistance, antistatic

    水洗尺寸變化率（縮水） ，斷裂強力，起毛起球，撕破強力，彈子頂破強力，脹破強度接縫強力，縫口脫開程度，紗線滑移性能（滑脫） ，透氣量，彈性（回復率/變形率） ，抗滲水性（靜水壓） ，延伸及回復性，耐磨性，沾水性，吸水性，襪子橫向延伸，阻燃性能，抗靜電。
  2. Results showed that unilateral transection of the middle midbrain above the ventral tegmentum did not block the synchronized bursts on both sides ; however, the synchronized bursts disappeared after unilateral transection through the middle of the medial hypothalamus

    結果顯示:在腹側被蓋以上橫向切斷單側中腦中部，不能阻斷雙側催產素神經元的同步化爆發放電;但是單側下丘腦中間內側部橫切則可阻斷這種同步化爆發放電。
  3. In the dissertation, the effects of the air slide - film damping on the capacitive accelerometers having different slot structures which are completely or partly etched, and fabricated by the anodic bonding between silicon and glass and bulk silicon micromachining process are researched by changing the distance between the moving structure and substrate, the thickness of the structure, the width of the completely etched slot structure, the depth of the partly etched slot structure according to the two well known air slide - film damping models

    對于橫向運動的體微機械器件，其周圍空氣表現為滑膜阻尼。本文基於滑膜阻尼的兩個模型，通過改變振子與襯底的間距、振子的厚度、刻透的柵槽的寬度、沒有刻透的柵槽的深度等參數，研究了這些參數對硅?玻璃鍵合工藝製作的體硅微機械電容式傳感器阻尼特性的影響。
  4. Based on sndm technique, a method of local capacitance - voltage characteristic characterization of ferroelectric thin films was proposed. the effect of traps at oxide - semiconductor interface on metal - oxide - semiconductor structure capacitance - voltage curve was discussed, and the influence of coercive field to the capacitance - voltage characteristics of ferroelectric thin films was also discussed. the dynamic switching of ferroelectric domain in ca doping ( pb, la ) tio3 thin film was studied by sndm from the view of electricity

    利用sndm ，從純電學的角度觀察了plct薄膜中的電疇動態反轉過程，由電疇橫向擴張的移動速度的降低，發現了晶界在電疇反轉過程中對疇壁移動的阻擋作用;根據sndm和pfm的在垂直方向上的不同信息敏感深度，得到plct薄膜中電疇反轉過程中電疇是楔形疇;用pfm觀察同一電疇在去掉外加反轉電場后電疇的極化弛豫現象，結果表明空間電荷是發生極化弛豫的主要原因。
  5. In the model of on - resistance, we have considered the lateral doping distribution in ldmos channel and vertical doping distribution in drift region. then we provide the explicit dependence between on - resistance and doping distribution parameter

    導通電阻模型考慮了ldmos的溝道橫向雜質分佈和漂移區雜質縱向分佈的結構特點，給出了導通電阻與雜質分佈參數的明確函數關系。
  6. The simulation results indicate, deep - trench junction termination with certain width, depth and filling with isolated dielectric can increase the avalanche breakdown voltage of devices to above 95 % of the ideal value

    結果表明：具有一定寬度、深度且填充絕緣介質的深阱結終端結構，阻止了結的橫向擴展，並能將器件的雪崩擊穿電壓提高到理想值的95以上。
  7. The expression can be used in calculation for relationships of the input voltage, output voltage and device geometry parameter

    用漸近解的分析方法對所求到的解進行簡化，導出了硅橫向壓阻效應四端壓力傳感器的輸出電壓表達式。
  8. Based on the previous theory, the fdtd method is used to analyze practical antennas, which include dipole antenna, microstrip antenna, log - periodic antenna and broadband resistance loaded monopoles. the particular problems that occur in the calculating of vary type antennas are discussed. the cross - section field of microstrip line and two - conductor line are analyzed, and the effect on the numerical result arising from the incident cross - section mesh size is discussed

    在前面理論的基礎上，將fdtd用於振子天線、微帶天線、對數周期天線、電阻加載振子天線等各種天線的計算中，對各種不同類型天線計算中所遇到的特殊問題進行了詳細的討論，並分析各種開放場傳輸線如微帶線、平行雙線等橫向場分佈，討論了入射網格橫向截斷區域的大小對計算結果的影響。
  9. Using time - dependent mode matched scattering matrix method and based on the theory of the interaction between atom and electromagnetic field, we predict the effect that the longitudinal transport of electron is partly blocked by the lateral emitting electromagnetic wave and give detail analysis of the mechanism and the feature of the effect

    第三章我們以光和原子相互作用理論為基礎，用含時模式匹配散射矩陣方法研究了直量子線在太赫茲電磁場部分輻照下的電子輸運性質，並得出橫向電磁輻射對電子縱向運動的阻塞效應。
  10. A new method for magnification of output torque of transverse - flux switched reluctance machines

    一種提高橫向磁場開關磁阻電機輸出轉矩的新方法
  11. Textiles. testing of fabrics. determination of the transversal superficial electric resistance

    紡織品.織物試驗.橫向表面電阻的測定
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