正向漏電流 的英文怎麼說

中文拼音 [zhēngxiànglóudiànliú]
正向漏電流 英文
forward leakage current
  • 正 : 正名詞（正月） the first month of the lunar year; the first moon
  • 漏 : Ⅰ動詞1 （從孔或縫中滴下、透出或掉出） leak; drip 2 （泄漏） divulge; disclose; leak 3 （遺漏） le...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 正向 : [電學] forward direction正向傳導 forward conduction
  • 電流 : current; galvanic current; electric current; electricity; current flow電流保護裝置 current protec...
  1. Unfortunately, though the lifetime control technology reduces the stored charge, it increases the forward voltage drop ( vr ) and the reverse leakage current ( i, ). therefore, si pin diode cannot realize a good trade - off in qs - vf - i, -. the appearance of sige material and sige / si hetero - junction technology has changed this situation

    但少子壽命控制技術在減少存貯電賀q _ s的同時，也增大了正向通態壓降v _ f ，和反向漏電流i _ r ，因此很難實現qs - v _ f - i _ r三者良好的折衷關系。
  2. The sample with low emitter efficiency has completed as the method of above. this lead to the greatly decrease of the reverse recovery time and the low reverse leakage and forward voltage, especially the excellent temperature character of the leakage. the test date shows that the samples reach the first class of international level

    本論文作者通過模擬測試，驗證了課題研究的理論設想，並設計製作了具有低陽極發射效率結構的高壓功率frd ，利用局域鉑摻雜和電子輻照相結合的壽命控制方式，實現器件反向恢復時間的極大減小，並且反向漏電流、軟度因子、正向壓降等關鍵參數也較理想，且具有極佳的漏電溫度特性，達到器件綜合性能的優良折衷，達到國際先進水平。
  3. All diodes have large reverse leak current density, which maybe caused by some reasons such as many ions are brought in course of evaporating metal on silicon surface of 6h - sic, chemical etch brings disfigurements such as burrs and dentate erodes as well as the rinse on surface of samples is not drastically accomplished

    兩個肖特基二極體反向漏電流較大，估計原因為正面蒸發金屬時引入大量離子、光刻引入毛刺和鉆蝕等缺陷、金屬與樣品粘附能力差及樣品背面歐姆接觸制備好后正面清洗不充分等。
  4. In this paper, multilayered pt / bst / pt thin film capacitors were fabricated by the sol - gel process. both the reverse and forward leakage currents of the pt / bst / pt capacitors were reduced several orders of magnitude by employing this multilayered structure with top and bottom layers annealed at low temperatures during the sol - gel deposition of bst films

    本文採用溶膠-凝膠法，通過降低最底層和最上層的退火溫度，在pt ti sio _ 2 si襯底上制備了非晶多晶型bst多層膜，不僅改善了正向漏電流特性，而且也改善了反向漏電流特性。
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