氣體放電顯示 的英文怎麼說
中文拼音 [qìtǐfàngdiànxiǎnshì]
氣體放電顯示
英文
gas discharge display- 氣 : Ⅰ名詞1 （氣體） gas 2 （空氣） air 3 （氣息） breath 4 （自然界冷熱陰晴等現象） weather 5 （氣味...
- 體 : 體構詞成分。
- 放 : releaseset freelet go
- 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
- 顯 : Ⅰ形容詞1 （明顯） apparent; obvious; noticeable; evident 2 （有名聲有權勢的） illustrious and inf...
- 示 : Ⅰ動詞（擺出或指出使人知道; 表明） show; indicate; signify; instruct; notify Ⅱ名詞1 [書面語] （給...
- 氣體 : gas; gaseous fluid
- 放電 : [物理學] （electric） discharge; electro-discharge; discharging
- 顯示 : 1 （明顯地表示） show; display; demonstrate; exhibit; evince; manifest; discover; reveal; vision ...
-
Study on discharge gas used in color plasma display panel
彩色等離子體顯示器放電氣體的研究Sensitive element is one of the important to measure the concentration of mathane, and it " s export is a little voltage signal, little signal amplify circuit is to transform the analogue signal to digital signal, display circuit is to display the concentration of mathane, monitoring circuit is to monitor the overstep limit of mathane concentration. the feature is new design, accurately measure parameter, convenient to operate and so on
其中cpu是監控儀的核心，完成數據採集、處理、輸出、顯示等功能；敏感元件是準確檢測甲烷氣體含量的主要元件之一，其輸出是與甲烷濃度相對應的電壓信號；小信號放大電路則是用來放大敏感元件輸出的電壓信號； a d轉換電路把放大了的電壓信號由模擬信號變為數字信號送入cpu ；顯示電路則顯示實時甲烷濃度；報警電路對超限甲烷濃度進行報警。The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate
採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。Numerical analysis of influence of penning gas composition on discharge characteristics in ac plasma display panel
潘寧氣體組成對交流等離子體顯示器放電特性影響的數值分析As the development of green lighting project, the high intensity discharge ( hid ) lamp is drawing close attention due to its energy saving and high lighting efficiency
隨著綠色照明工程的發展，高強度氣體放電燈作為一種節能、高效的新型電光源，正越來越顯示出其優越性。Design and make the blood pressure and artery stiffness appartus, including the design of filter, amplifier, adc, memorizer circuit, lcd circuit, communication interface circuit, power supply, etc. research the blood pressure arithmetics and bring forward a new blood pressure judging method based on existing oscillometric technique
該儀器硬體電路以at89c55單片機為核心，包括信號採集處理電路、 a / d轉換電路、存儲器擴展電路、液晶顯示電路、自動充放氣電路、串列通信電路、鍵盤電路等幾大部分。分享友人