氧分壓控制 的英文怎麼說

中文拼音 [yǎngfēnyākòngzhì]
氧分壓控制 英文
oxygen partial pressure control
  • 氧 : 名詞[化學] （氣體元素） oxygen （o）
  • 分 : 分Ⅰ名詞1. （成分） component 2. （職責和權利的限度） what is within one's duty or rights Ⅱ同 「份」Ⅲ動詞[書面語] （料想） judge
  • 壓 : 壓構詞成分。
  • 控 : 動詞1 （告發;控告） accuse; charge 2 （控制） control; dominate 3 （使容器口兒朝下 讓裏面的液體慢...
  • 制 : Ⅰ動詞1 （製造） make; manufacture 2 （擬訂; 規定） draw up; establish 3 （用強力約束; 限定; 管束...
  • 控制 : control; dominate; regulate; govern; manage; check; cybernate; manipulate; encraty; rule; rein; c...
  1. A new measurement system for electrical conductivity in an yj - 3000t press fitted with a wedge - type cubic anvil was set up on the basis of the old one. a solartron 1260 impedance / gain phase analyzer was used in the new system ; mo electrodes and a mo shield were also used to keep oxygen fugacity close to the mo - moo2, which is similar to that of iron - wustite ( iw )

    在yj ?緊裝式六面頂壓機上，對原有的礦物、巖石電性測量系統進行了進一步的改進：建立了一套以solartron1260阻抗增益?相位分析儀為測試儀器，使用mo電極和mo盾來控制樣品氧逸度的測量系統，該系統的氧逸度環境為mo ? moo _ 2 ，接近iw緩沖對。
  2. Firstly, the tio2 thin films are deposited by dc reactive magnetron sputtering apparatus, and characterlized by n & k analyzer1200, x - ray diffraction spectroscopy ( xrd ), scanning electronic microscopy ( sem ), alpha - step500. and it was analyzed that the effect on performance and structure of films with the change of argon flow, total gas pressure, the substrate - to - target distance and temperature

    第一、應用穩定的直流磁控濺射設備制備tio2減反射薄膜並通過n & kanalyzer1200薄膜光學分析儀、 x射線衍射分析（ xrd ） 、掃描電子顯微鏡（ sem ） 、 alpha - step500型臺階儀等儀器對薄膜進行表徵，分析氧分壓、總氣壓、工作溫度、靶基距等制備工藝參數對薄膜性能結構的影響。
  3. In the second place, based on the asu of buggenum igcc plant in netherlands, both static and dynamical model for distillation tower of the asu are created and some valuable conclusions are gained as well. finally, a compartmental simplified model is created for distillation tower of the asu, in order to reduce the simulation time and increase the simulation efficiency. the new model will be helpful to the further simulation and on - line optimal control for the asu of the igcc plant

    其次，本文以荷蘭buggenum電站的空分系統為原型，基於matlab建立了空分系統精餾塔的半圖形化動、靜態數學模型，並通過模擬，得出了一些有價值的結論：當空分系統的壓力變化時，氧氣產品濃度的響應時間常數為兩小時左右，說明空分系統是igcc電站最大延遲環節；而且雖然氧氣濃度最後會穩定在igcc電站所要求的范圍之內，但在過渡過程中會超出限制，這些都為igcc電站的安全運行及控制系統設計提供了有價值的信息。
  4. Water steam was used as oxidant, and the optimum water steam partial pressure is between 1 10 - 4 and 5. 5 10 - 4 pa. under the optimum growth parameters, a ceo _ 2 seed layer with highly textured degree was successfully prepared. beside the one step process was experimented in this dissertation, the two step process was proposed and studied to further improve the quality of ceo _ 2 seed layer. in the two step process, about 15 nm thick of ce metal layer was deposited on metallic substrate at the first step, then water steam was introduced in the chamber, and the ceo _ 2 thin films were subsequently deposited with reactive sputtering in the

    總結出沉積ceo _ 2薄膜的優化工藝條件，當沉積溫度為720 - 850 、水蒸汽分壓介於1 10 - 4 - 5 . 5 10 - 4pa之間、退火時間40min時，獲得了織構程度良好的ceo _ 2種子層薄膜; 3 .由於一步法制備ceo _ 2種子層中水分壓范圍狹窄，工藝條件難以控制，並且退火延長了薄膜的制備時間，因此，本論文又採用了兩步生長法沉積ceo _ 2種子層，即:先在ni - w基帶上沉積一層約15nm的金屬ce薄膜，再通入氧化氣氛（水蒸汽） ，繼續進行薄膜沉積。
  5. The author ' s main contributions are outlined as following : first, the roles of hot electron and hole in dielectric breakdown of ultra - thin gate oxides have been quantitatively investigated by separately controlling the amounts of hot electron and hot hole injection using substrate hot hole ( shh ) injection method. the changes of threshold voltage have been discussed under different stress conditions

    主要研究結果如下：首先，利用襯底熱空穴（ shh ）注入技術分別控制注入到超薄柵氧化層中的熱電子和空穴的數量，定量研究了熱電子和空穴注入對超薄柵氧化層擊穿的影響，討論了不同應力條件下的閾值電壓變化。
  6. Correlation between partial co2 rebreathing technique and transesophageal doppler for cardiac output monitoring during controlled hypotension

    二氧化碳部分重吸入法與食管超聲多普勒法用於控制性降壓期間心輸出量測定的相關研究
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