氧化層的 的英文怎麼說
中文拼音 [yǎnghuàcéngde]
氧化層的
英文
oxide-coated-
The process of anodizing involves the deposition of further oxide on the surface.
陽極電鍍的工序就是在表面進一步附著氧化層。4 the cleanout and the passivation of si surface was carried out by a two - step process to overcome the surface oxide layer and balance the charge between the substrate and epitaxy. by this way, the crystal quality and emission characteristic of zno thin films can be improved, which provide a way to resolve the native oxide layer of si substrate
4 、通過用等離子體對硅襯底表面進行清洗和鈍化兩步處理，解決硅襯底表面的氧化層和界面電荷平衡問題，制備出了高質量的氧化鋅薄膜材料，找到了一條獲得了高質量的氧化鋅薄膜的新途徑。( 5 ) glassy oxide film of samples processed by mevva al / piid si covered the surface of sic coating thickly and uniformly, and left few holes as a result of a good ability of sealing, which made weight loss of sic - c / sic smaller in air at1300
（ 5 ） mevva源注入al再piid （等離子源全方位沉積） si塗層，玻璃氧化層厚而均勻，愈合性能好，孔洞少，對塗層缺陷有最佳的改性效果。復合材料在1300空氣中的氧化失重顯著降低，甚至出現增重。Formation mechanism of cracks in surface oxidating layer of mosi2 heating material
2電熱材料表面氧化層裂紋的形成機制Anodizing of aluminium and its alloys. general specifications for anodic oxide coatings on aluminium
鋁及鋁合金的陽極氧化.鋁的陽極氧化層的通用規范A new physical model of tddb of ultra - thin gate oxides is presented on the bases of above analysis
為超薄柵氧化層的經時擊穿建立了一個新的物理模型。Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment
Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sigeHot hole injection experiments reveal that the lifetime of ultra - thin gate oxide is not simply determined by the total number of injected hole
熱空穴注入的實驗結果表明超薄柵氧化層的擊穿不僅由注入的空穴數量決定。This dissertation is the first report that points out the cooperation of hot electron and hole is essential for the tddb of ultra - thin gate oxides
首次提出了超薄柵氧化層的經時擊穿是由熱電子和空穴共同作用導致的新觀點。Aluminium and aluminium alloys. anodizing. part 5 : assessment of quality of sealed anodic oxidation coatings by measurement of admittance
鋁和鋁合金.陽極化.第5部分:用導納測量對密封陽極氧化層的質量評估Aluminium and aluminium alloys - anodizing - part 14 : visual determination of image clarity of anodic oxidation coatings - chart scale method
鋁和鋁合金.陽極化.第14部分:用目視測定陽極氧化層的圖像清晰度.圖表比例尺法Aluminium and aluminium alloys. anodizing. part 10 : measurement of mean specific abrasion resistance of anodic oxidation coatings using an abrasive jet test apparatus
鋁和鋁合金.陽極化.第10部分:使用噴砂試驗裝置對陽極氧化層的平均比耐磨性能的測定This shift became distinct after annealing at 1100, which showed a decrease of the density and was considered that the interstitial impurity had diffused from sio2
根據現有數據認為退火過后氧化層的密度變小，可能是氧化層內部間隙式雜質擴散出來的結果。But the quality of its oxide is far from adequate for industrial devices. the devices need high quality of oxide film and sio2 / sic interface structure
由於其氧化層的的質量還不能達到工業生產的要求，目前關于sic表面的氧化層質量以及界面態特性仍然需要大量研究。On the basis of the content and the microstructure of the layer, this paper attempt to explore the mechanism of the high - temperature of ni - fe alloy plating and its oxidation resistance
根據鍍層氧化層的成分、形貌，就ni - fe合金鍍層的高溫氧化機理作了一定的探討。The effect of polarons on the luminescence properties of quantum dots ( qds ) is an important problem in qd research and applications. we review the recent progress in the concept, possibility and size dependent energy variance of confined polarons in various qds. we suggest that the formation of polarons is related to intrinsic and / or extrinsic phonons and that the idea of confined polarons that we recently proposed can be used to explain the specific spectrscopic characteristics of oxidized nanosilicon systems, even single nanosilicon structures. this model may help to reveal the luminescence mechanism of porous silicon
量子點中的極化子效應是當前量子點研究中的重要問題，其特徵急需了解.文章在綜述了量子點中限域極化子的概念、可能性和能量隨尺寸的變化規律之後，提出了界面限域極化子模型，該模型首次指明本徵聲子和外來聲子都可能對界面限域極化子的形成有貢獻.作者利用此模型分析了多孔硅體系中的光譜特徵，證實了表面覆有氧化層的納米硅的行為十分符合量子限域極化子的特徵.這一極化子模型與單個納米硅結構的發光譜十分一致，此結果對最終揭示多孔硅發光機理有重要意義Aluminium and aluminium alloys - anodizing - part 11 : measurement of specular reflectance and specular gloss of anodic oxidation coatings at angles of 20 o, 45 o, 60 o or 85 o
鋁和鋁合金.陽極化.第11部分:以20度45度60度或85度角度測定陽極氧化層的鏡面反射率和鏡面光澤Tddb and hce always take place simultaneously under device operation conditions. hot - carrier enhanced tddb effect of ultra - thin gate oxide is investigated by using substrate hot - carrier injection technique
在通常的工作條件下，氧化層的經時擊穿和熱載流子效應總是同時存在的。Abstract : the saturation behavior of stress current is studied. the three types of precursor sites for trap generation are also introduced by fitting method based on first order rate equation. a further investigation by statistics experiments shows that there are definite relationships among time constant of trap generation, the time - to - breakdown, and stress voltage. it also means that the time constant of trap generation can be used to predict oxide lifetime. this method is faster for tddb study compared with usual breakdown experiments
文摘:基於一階速率方程，討論了恆定電壓應力下應力電流的飽和行為.通過對應力電流的擬合，發現存在三類缺陷產生的前身.更進一步的統計實驗顯示，在缺陷產生時間常數、擊穿時間以及應力電壓之間存在著明確的關系.這意味著缺陷產生時間常數能夠被用於有效預測氧化層的壽命.與常規的氧化層擊穿實驗相比，基於缺陷產生時間常數的預測更快、更有效The experimental results reveal that mg and n2 are necessary for pressureless infiltration, and the heat rate is critical condition for producing big samples. infiltration is sensitive to environmental atmorspher, impurities and oxide shells of al powders
結果表明， mg和n _ 2對滲透的順利進行是必需的，滲透時的升溫速度對于較大樣品的制備很關鍵，滲透過程對環境、雜質、氧化層的影響很敏感。分享友人