氧化層 的英文怎麼說

中文拼音 [yǎnghuàcéng]
氧化層 英文
oxide layer; oxide coating; oxidation layer
  • 氧 : 名詞[化學] （氣體元素） oxygen （o）
  • 層 : i 量詞1 （用於重疊、積累的東西 如樓層、階層、地層） storey; tier; stratum 2 （用於可以分項分步的...
  • 氧化 : [化學] oxidize; oxidate; oxide; burning; rust; oxygenize; oxido-; oxy-
  1. The process of anodizing involves the deposition of further oxide on the surface.

    陽極電鍍的工序就是在表面進一步附著氧化層。
  2. 4 the cleanout and the passivation of si surface was carried out by a two - step process to overcome the surface oxide layer and balance the charge between the substrate and epitaxy. by this way, the crystal quality and emission characteristic of zno thin films can be improved, which provide a way to resolve the native oxide layer of si substrate

    4 、通過用等離子體對硅襯底表面進行清洗和鈍化兩步處理，解決硅襯底表面的氧化層和界面電荷平衡問題，制備出了高質量的氧化鋅薄膜材料，找到了一條獲得了高質量的氧化鋅薄膜的新途徑。
  3. ( 5 ) glassy oxide film of samples processed by mevva al / piid si covered the surface of sic coating thickly and uniformly, and left few holes as a result of a good ability of sealing, which made weight loss of sic - c / sic smaller in air at1300

    （ 5 ） mevva源注入al再piid （等離子源全方位沉積） si塗層，玻璃氧化層厚而均勻，愈合性能好，孔洞少，對塗層缺陷有最佳的改性效果。復合材料在1300空氣中的氧化失重顯著降低，甚至出現增重。
  4. Formation mechanism of cracks in surface oxidating layer of mosi2 heating material

    2電熱材料表面氧化層裂紋的形成機制
  5. This oxide coating may peel off under stress and break the stack bond.

    該氧化層受壓可能會剝落，並破壞鐵芯的聯結。
  6. It is designed according to electrical stove or microwave oven request. heating pipe adopts high temperature resistance mgo powder as the insulation medium and the stainless steel case is passed oxidation deal through the advanced web band protection oven 1050c in order to become the a special oxidation layer and improve the high temperature oxidation and bittern corrosive performance of the heating pipe. the heating tube has high power density and strong heat radion. this product with good safe performance can work normally after 3000hrs life test

    加熱管選用耐高溫氧化鎂作絕緣介質，不銹鋼外殼經過先進的網帶氣體保護爐1050的氧化處理，形成一種特殊的氧化層，提高電熱管的抗高溫氧化及鹽鹵的腐蝕性能。電熱管的功率密度較高，熱輻射能力強。產品經長達3000h的壽命試驗后，仍能正常工作，安全性能好。
  7. A special chemcial is added to remove oxidation and impurities which make gd brass rod maintain its shininess

    獨特的化學配方充分消除氧化層和其它雜物，並長期保持gd銅棒獨有的光澤。
  8. Anodization only changed the oxide layers on the archwire surfaces and the entities of the wires were not altered, so no biocompatibility problems were introduced by the anodized wires

    陽極處理僅調控矯正線表面氧化層之厚度，並未改變矯正線之材料本質，因此也未引進生物相容性的問題。
  9. It is found that the main electronic conduction mechanism in the high field regions of the i - v characteristics is identified to be fowlernordheim tunneling. the effect of y ray on sic mos c - v characteristics depends strongly on the bias voltage applied to the gate electrode during irrad

    當氧化層中存在較強電場時，電離輻照對s匯mos電容的影響會更明顯， sicmos器件比st器件具有更好的抗y輻照的能力。
  10. Author analyzed the relationship between the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation

    採用數值模擬分析方法，深入研究了漂移區長度、漂移區濃度、埋氧層厚度、頂層硅厚度、氧化層電荷以及襯底偏壓對resurf效應、擊穿電壓和導通電阻的影響。
  11. Anodizing of aluminium and its alloys. accelerated test of light fastness of coloured anodic oxide coatings to artificial light

    鋁和鋁合金的陽極處理.著色陽極氧化層耐人造光的色牢度加速試驗
  12. They should remove the field plate and oxide and deposit a thin aluminum film over this region.

    他們應當去掉場極板和氧化層，並在整個區域淀積一層薄的鋁薄膜。
  13. In this experiment, we prepare hydrogenation by pecvd after deposition of silicon nitride thin film for gate insulator of tft

    本實驗在沉積柵氧化層后立即用pecvd進行多晶硅的氫化處理。
  14. Feioj content in the layer increases with the fe wt % in plating

    隨著鍍層中鐵含量的增加，氧化層中fe _ 2o _ 3逐漸增多。
  15. The coating can be white zine, color zine, nickel, phosphate processing or resin

    磁體表面防氧化層可採用鍍白鋅、五彩鋅、鍍鎳、磷化、或環氧樹脂噴塗。
  16. Anodizing of aluminium and its alloys. general specifications for anodic oxide coatings on aluminium

    鋁及鋁合金的陽極氧化.鋁的陽極氧化層的通用規范
  17. A new physical model of tddb of ultra - thin gate oxides is presented on the bases of above analysis

    為超薄柵氧化層的經時擊穿建立了一個新的物理模型。
  18. A new hot - carrier - induced tddb model of ultra - thin gate oxide is reported in this dissertation

    本文提出了一個全新的熱載流子增強的超薄柵氧化層經時擊穿模型。
  19. Blow out lines to remove all loose scale and other foreign matter that can damage valve seat

    往外吹氣，清除管道內所有可能損壞閥門閥座的疏鬆氧化層和其它外來物質。
  20. Since solder balls do oxidize quickly and builds an oxide coat that reduces the soldering characteristic of the ball, the chips should be vacuum sealed shortly after the reball process

    因為很容易氧化並且形成一個氧化層覆蓋會降低錫球的焊接特性，所以在重新植球加工后應盡快真空封裝。
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