氧晶格 的英文怎麼說

中文拼音 [yǎngjīnggé]
氧晶格 英文
oxygen lattice
  • 氧 : 名詞[化學] （氣體元素） oxygen （o）
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 格 : 格象聲詞rattle; gurgle
  1. When the thickness increases up to a critical value, about 30 nm, the spotty rheed pattern gradually changes to streaky pattern, and the rheed oscillation curve appears. the rheed pattern of the ultra thin lno film deposited in the relatively high oxygen pressure is streaky pattern. with pumping the oxygen pressure to the relatively low value, the streaky rheed pattern gradually changes to spotty one

    我們發現在較低的真空度下，即氧分壓處於2 10 - 4pa和3 10 - 3pa之間， lno晶格中的一個o2 -將會轉移兩個電子給兩個ni3 + ，並且移動到薄膜表面形成o2被泵抽走，從而導致鈣鈦礦結構的垮塌，其相應的rheed圖樣呈現出清晰而明亮的點，表明表面為較為粗糙的三維島狀結構。
  2. When increasing the oxygen pressure, the rheed pattern changes to streaky one again. this rheed pattern transformation induced by the oxygen pressure is reversible. ex situ xps results indicate that the element ni of lno film deposited in the relatively low oxygen pressure with thickness below the critical value exists in the form as ni2 +, while as ni3 + in the relatively high oxygen pressure

    隨著膜厚增加而超過約30nm的臨界厚度時，越來越多的晶格氧會移動到了薄膜表面，此時所提供的氧將使得后續生長的lno膜層重新形成鈣鈦礦結構，並以層狀方式外延生長。
  3. Selective oxidation of methane to synthesis gas using lattice oxygen from perovskite la0. 8sr0. 2feo3 catalyst

    3中的晶格氧用於甲烷選擇氧化制取合成氣
  4. Thus, such phenomena as vermilion turning black, aging of red lead and the fading of arsenic can now be more essentially represented by the chemical reactions of cinnabar having its crystal lattice transformed, lead tetroxide turned into lead dioxide, and arsenic sulfide turned into arsenic oxide

    於是，硃砂變黑，鉛丹老化，石黃退色等現象，便可以用硫化汞轉變了晶格，四氧化三鉛變成了二氧化鉛，硫化砷變成了氧化砷來更本質地加以表述了。
  5. In manganite perovskites, substitution of divalent ions ( alkaline earth metals viz. ca, sr, ba ) in the a sublattice, introduces mn4 + ions or holes into the system. it is generally considered that the concentration of holes is equal to the concentration of divalent cations because of the charge compensation by controlled valencies

    在類鈣鈦礦型晶體結構中通過摻入二價堿土金屬（如ca ， sr ， ba ）可以在系統中產生mn ~ （ 4 + ）或氧空位，由價格補償的原理，理論上摻入的二價離子的濃度和氧空位的濃度相等。
  6. The result showed that crystal defect of nano - cuo prepared by pressure - hydrothermal method is less, structure is more stable, the process of charge and discharge is more steady, and duration is longer

    結果表明，壓力-熱液法制備的納米氧化銅晶格缺陷少，結構穩定，充放電過程平穩，且持續時間長。
  7. Product this getting wet pouch active mt of packaging completely, main raw materials active mt one natural having special crystallization layers of silicate clay ore of form scarce, sublimated and processed and succeeded by special technology, one layer of forms tetrahedron and octahedra chip of it are arranged into six mao net, cause the crystalline grain to expand after absorbing water, pick up the moisture, get rid of oxygen, keeps fresh, anticorro sion, long result function, it is a kind of healthy green environmentally safe product

    本品是透濕性小袋包裝的活性mt ，主要原料活性mt是一種天然稀有的具特殊結晶層狀的硅酸鹽粘土礦，經特殊技術提純加工而成，它的層狀四面體和八面體晶片排成六角網格，吸水后引起晶格膨脹，具吸濕、除氧、保鮮、防蝕、長效功能，是一種健康綠色環保產品。
  8. The cerium in the sample prepared by solvent - thermal method exists as ce3 +, and it mostly occupies position b of spinel

    溶劑熱法制備的鐵氧體樣品中，鈰離子以三價形式存在，因而主要佔據尖晶石晶格的b位。
  9. Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth

    文摘:在成功地外延生長超導、鐵電、鐵磁等多種性質的鈣鈦礦結構氧化物薄膜的基礎上，討論影響氧化物薄膜外延生長的一些因素.考慮到相形成和薄膜生長動力學，在利用脈沖激光淀積法外延生長氧化物薄膜中襯底溫度是十分重要的工藝參數.襯底溫度對成相和生長薄膜的取向都有影響.考慮到薄膜是首先在襯底表面成核、成相併生長.因此襯底材料晶格的影響是不容忽視的.觀察到襯底材料對薄膜外延生長溫度的影響.在適當的工藝條件下，利用低溫三步法工藝制備得到有很強織構的外延薄膜.這突出表明界面層的相互作用對鈣鈦礦結構薄膜的取向有著相當大的影響
  10. When the - 3 - particle size was small, the aberration of crystal lattice appeared and the bandgap energy increased, which resulted in the blue shift of absorption in the spectrum

    本研究中小的二氧化鈦晶粒導致了tio _ 2的晶格畸變，進而增大了tio _ 2的禁帶寬度，表現在光吸收譜的藍移。
  11. In addition, integrated circuits and semiconductor devices are generally made with single - side polished wafers, therefore the results of this work indicate that nanocavity - gettering technique is practical in manufacture of devices. finally, the gettering uniformity is demonstrated directly on samples. the gettering results of au to oxygen intrinsic precipitation and to the nanocavity formed by helium ion implantation were compared and discussed in this paper

    本文還對實驗樣品中存在的氧沉積、晶格損傷對金雜質的吸除效果，與注氦誘生微孔的吸雜效果進行了比較和討論，進一步證實了注氦誘生微孔吸除金雜質的均勻性，並加深了對微孔吸除機理的理解。
  12. According to the sample prepared by hydrothermal method, the doping cations can enter the spinel lattice. rare earth cations mostly occupy position b because of their big radius. cerium are oxidized to ce4 +, whose radius is relatively small, and ce4 + mostly occupies position a. as a whole, the coercivity of cobalt ferrite doped with rare earth element is bigger than that of pure cobalt ferrite

    結果表明，對水熱法制備的鐵氧體粒子，雜質離子能夠進入其尖晶石晶格中，並因稀土離子的半徑較大，而絕大部分佔據尖晶石的b位，鈰元素因被氧化成為四價離子，離子半徑相對較小，而主要佔據a位。
  13. The theoretical calculation and explanation of strain behavior during heteroepitaxy of oxides thin films : when the lattice mismatch is relative small ( for example, batio _ 3 / srtio _ 3 with a lattice mismatch of 2. 18 % ), the growth mode of thin films is layer - by - layer, and the critical thickness and strain relaxation can be calculated or estimated by matthews - blakeslee expressions ; when the lattice mismatch is large ( for example mgo / srtio _ 3 with lattice mismatch of 8 % ), the strain relaxation process can be explained by theory of coherent strained islands

    氧化物薄膜異質外延應變行為的理論預測和解釋。對于晶格失配較小的外延體系（如batio3 / srtio _ 3 2 . 18 % ） ，薄膜以層狀方式進行生長，臨界厚度和應變釋放過程可以用經典的matthews - blakeslee公式進行預測;對于晶格失配較大的體系（如mgo / srtio _ 3 8 % ） ，薄膜以島狀方式進行生長，應變釋放過程可以由彈性應變島的理論體系進行解釋。
  14. The model of primary battery theory was built to explain the mechanism of improving uniformity of copper powders. as the two different particles closing up, primary battery reaction happened because of the

    使原來存在大量扭折、臺階等缺陷的銅晶得到晶格修補，使晶格完美化生長，從而一定程度上提高了其抗氧化溫度。
  15. There is 148mah / g theory capacity in spinel limn2o4, which has lots of advantages, such as synthesize method is simple, the price is low, and is friendly to environment. the spinel limn2o4 is perfect substitution of li - ion batteries cathode. but now it has not been commercialized because its capacity fades during the cycle of charge - discharge

    Limn2o4具有尖晶石結構，其理論放電容量達148mah / g ，由於制備工藝簡單、價格低廉、對環境友好等，是一種很有應用前景的鋰離子電池正極材料;尖晶石limn2o4正極材料在充放電循環過程中由於錳元素的溶解、晶格發生jahn - teller變形和電解液的氧化分解，使得容量衰減較快，至今未能商業化。
  16. Zno is promising : high - quality zno with very low defect densities can be synthesized at much lower temperature ; zno can emits light with shorter wavelength than blue light emission from gan ; zno has higher excitonic binding energy promising strong photoluminescence from the bound excitonic emissions even at room temperature ; by alloying with mgo, tuning of the band gap while keeping the zno hexagonal structure can be achieved by forming mgxzn1 - xo. as we know, band gap tuning is important to produce efficient and lasting light emitting diodes ( led ) and other electronic devices

    利用mg _ xzn _ （ 1 - x ） o薄膜，可以在保持zno六方纖鋅礦（ wurtzite ）結構的同時有效調節調節薄膜的禁帶寬度，制備出基於氧化鋅的量子阱、超晶格及相關的光電器件，如基於氧化鋅的紫外光探測器、紫外發光二極體和紫外激光二極體等光電子器件。
  17. However the study of metal - oxide hetero - interface is relatively less because the properties of metals and oxides usually differ extremely from each other. contrary to metals, the oxides are usually very brittle, elastically stiffer, insulating and exhibit less thermal expansion and their crystal lattice constants are different from metals. moreover, the preparation of specimen of metal - oxide interface is very difficult, the observation of searching a suitable interface under the electron microscope is also a tedious work

    然而，對金屬-氧化物界面結構的研究卻相對少一些，這主要是由於金屬與氧化物之間的性質相差非常大，與金屬相反，氧化物通常很脆、絕熱、熱膨脹系數小，晶格常數也不同於金屬，有的甚至相差很大，而且，制備金屬-氧化物界面比較困難，在電子顯微鏡下全面地觀察一個合適的界面也是一項令人乏味的工作。
  18. Tg curves indicate, there were no detectable weight loss below 400 in any composition, the temperature at which weight loss becomes significant decreases, and the magnitude of weight loss increases with increasing sr content, but the onset temperature of weight loss increases and the amou nt of this loss decreases with increasing fe content

    熱重曲線表明這類材料在400以下未觀察到失重現象，隨著sr含量的增加，失重的起始溫度有所降低，但失重量反而增加；隨著fe含量的增加而增加，失重是源於晶格氧的解析，即與氧空位的生成有關。
  19. The study of phase formation of the polycrystalline la1 - xagxmno a series of polycrystalline la1 - xagxmno3 samples with x range nominally from 0. 05 to 0. 45 were investigated, and found that the critical phase temperature has close relation with the content of silver in the sample. and pointed out in the case of agl + doped in lamno3, when x achieved a fixed value ( x = 0. 15 ), ag would separate out, ag - rich phase appeared, samples became compound phase

    並且當銀含量達到一定程度時會有單質銀析出，我們認為這是因為銀離子在溶膠?凝膠的過程中被還原成單質，以銀團簇的形態存在於樣品中，隨著燒結溫度的提高，銀原子逐漸被氧化成銀離子，取代la ~ （ 3 + ） ，進入晶格，形成鈣鈦礦結構。
  20. According to the requirement of innovation engineering in chinese academy of sciences, the work in this thesis focused on fabrication of soi material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon, and we obtained the following new results : the effect of doping and anodizing condition on the properties of porous silicon, including the microstructure, ciystallinity and surface morphology, has been studied systematically. it is found that the porous silicon and substrate have the same orientation and share a coherent boundary. but at the edge of pores, the lattice relaxes, which induces xrd peak moving of porous silicon

    Soi技術和多孔硅納米發光技術研究是當今微電子與光電子研究領域的前沿課題，本文根據科學院創新工程研究工作的需要，開展了多孔硅外延層轉移eltran - soi新材料制備與改性多孔硅發光性能的研究，獲得的主要結果如下：系統研究了矽片摻雜濃度、摻雜類型和陽極氧化條件等因素對多孔硅結構、單晶性能和表面狀態的影響，發現多孔硅與襯底並不是嚴格的四方畸變，在多孔硅/硅襯底的界面上，多孔硅的晶格與襯底完全一致，但在孔的邊緣，多孔硅的晶格發生弛豫。
分享友人
分享到 Line

分享到臉書