氫等離子體 的英文怎麼說

中文拼音 [qīngděngzi]
氫等離子體 英文
hydrogen plasma
  • : 名詞[化學] (氣體元素) hydrogen (h)
  • : Ⅰ量詞1 (等級) class; grade; rank 2 (種; 類) kind; sort; type Ⅱ形容詞(程度或數量上相同) equa...
  • : Ⅰ動詞1 (離開) leave; part from; be away from; separate 2 (背離) go against 3 (缺少) dispens...
  • : 子Ⅰ名詞1 (兒子) son 2 (人的通稱) person 3 (古代特指有學問的男人) ancient title of respect f...
  • : 體構詞成分。
  • 離子 : [物理學] ion
  1. Hydrogenated amorphous silicon nitride ( a - sinx : h ) films have been deposited by helicon wave plasma enhanced chemical vapor deposition ( hwp - cvd ), the effect of sih4 / n2 rate on the properties of the samples is systematically studied, and the critical experiment condition is obtained under which a - sinx : h films with different compositions are deposited

    本工作採用螺旋波化學氣相沉積( hwp - cvd )方法制備了化非晶氮化硅( a - sin _ x : h )薄膜,系統地研究了不同反應氣配比對薄膜特性的影響,得到了沉積不同組分a - sin _ x : h的典型實驗條件。
  2. During ion source operating, alternating axial magnetic field and azimuthal electric field in discharge tube ionize hydrogen gas purified by hot palladium pipe, and form plasma, hi fifties year, research reports studied on rf ion source are numerous however most of them are concerned about application, and research reports relevant to discharge theory or experiment model are unfrequent

    源工作時,放電空間交變的軸向磁場和渦漩電場激發放電管中經鈀管純化后通入的氣電,形成。 50多年來,關于高頻源的研究報告很多,但是,這些研究主要都集中在應用研究方面,有關高頻無極環形放電源的理論與實驗模型研究不是很多。
  3. Sodium hydroxide for industrial use - part 6 : determination of iron content - atomic absorption spectrometry and inductively coupled plasma atomic emission spectrophotometry

    工業用氧化鈉.第6部分:鐵含量的測定.原吸收光譜測定法和感應耦合發射光譜測定法
  4. Al - doped zno thin films are emerging as an alternative potential candidate for ito flims recently. al doped zno thin films also can obtain a tunable band gap. especially, zno : al thin films with high c - axis orientated crystalline structure along ( 002 ) plane are potential device applications in broadband ultra - violet

    Al摻雜的zno薄膜不僅具有與傳統ito薄膜相比擬的光電性質,而且原材料豐富、價格低、無毒、沉積溫度低、熱穩定性高,在氫等離子體環境中具有很高的化學穩定性,不易導致太陽能電池材料活性降低。
  5. Spectral line shifts of h - like neon in hot and dense plasmas

    氖在高溫高密度中的光譜漂移
  6. The performances of multicrystalline silicon solar cells were improved after porous silicon heavy phosphorous diffusion passivation and low frequency plasma hydrogen passivation

    通過多孔硅重磷擴散鈍化及低頻鈍化多晶硅太陽電池晶界鈍化,改善了太陽電池性能。
  7. Standard test method for determining hafnium in zirconium and zirconium alloys using the d - c argon plasma spectrometer

    使用氫等離子體光譜計測定鋯和鋯合金中鉿的標準試驗方法
  8. Sinx thin film can improve the minor carrier lifetime of both mono and poly silicon by the simultaneous surface and bulk passivation

    9 )的提高;先沉積氮化硅薄膜再氫等離子體處理能得到更好的鈍化效果。
  9. Abstract : some plasma sources in plasma microwave devices have been introduced and analyzed in this paper, the design and its driving circuit of a compact hydrogen plasma gun have been discussed in detail

    文摘:介紹和分析了幾種微波器件中源,重點討論了緊湊型氫等離子體槍的設計及其驅動電路。
  10. The method of preparing the uniform coating, the techniques of thermal bonding and hydrogen plasma treatment was investigated experimentally. the optimum coating method and technological parameters was summarized

    重點探索了塗覆金剛石納米塗層的方法、實現金剛石與金屬鈦的熱粘接工藝以及氫等離子體處理的工藝參數,篩選出了在本實驗系統中的最佳方法和工藝條件。
  11. Al - doped zno ( azo ) thin films are emerging as an alternative potential candidate for ito ( sn - doped in2o3 ) films recently not only because of their comparable optical and electrical properties ( high optical transparency in the visible range, infrared reflectance and low d. c. resistivity ) to ito films, but also because of their higher thermal and chemical stability under the exposure to hydrogen plasma than ito

    Al摻雜的zno薄膜,由於具有與ito ( in _ 2o _ 3中適量摻雜sn )薄膜相比擬的對可見光的高透過率和高電導,又因其在氫等離子體中的高穩定性優點,已成為替代ito透明導電薄膜的研究熱點。
  12. Furthermore, they offer a number of advantages compared to the predominant ito films nowadays : ( i ) cheap and abundant raw materials ; ( ii ) nontoxicity ; ( iii ) good stability in hydrogen plasma, which is of significance for applications related to amorphous silicon solar cell. so the study on zao film is becoming fashionable

    而zno : al ( zao )薄膜由於具有優良的光電特性而成為ito薄膜的潛在替代材料,且它還具有原材料來源豐富、成本低廉、無毒以及在氫等離子體中具有較好的穩定性優點,是目前研究的熱點薄膜材料之一。
  13. However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down

    通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果,實驗還發現氫等離子體處理對多晶硅材料的少壽命提高作用比較明顯,但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大;氨化硅薄膜中的對單晶硅的載流遷移率提高有一定作用,但經過高溫處理后這種作用消失;氮化硅薄膜能提高單晶硅和多晶硅的少壽命,具有表面鈍化和鈍化的雙重作用;氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度,進而使電池效率有不同程度(絕對轉換效率0
  14. In recent years, al - doped zno ( azo ) thin films has become a hot issue of transparent conductive thin films field and preferred materials instead of ito films not only because of their comparable optical and electrical properties ( high optical transparency in the visible range, low electrical resistivity ) to ito films, but also because of their lower price and higher thermal and chemical stability under the exposure to hydrogen plasma than ito

    近年來,由於al摻雜的zno薄膜( azo )具有與ito薄膜相比擬的光電性能(可見光區高透射率和低電阻率) ,又因其價格較低以及在氫等離子體中的高穩定性優點,已經成為替代昂貴的ito薄膜的首選材料和當前透明導電薄膜領域的研究熱點之一。
  15. The chief results and conclusion thus arrived at are as folloes : ( 1 ) the morphology and electrical properties of indium - tin - oxide ( ito ) films which were treated respectively by ethanol, naoh, sulfuric and oxygen plasma, were studied from microscopic view by atomic force microscopy, x - ray photoelectron spectroscopy and goniometer

    ( 1 )利用原力顯微鏡、接觸角測試儀、紫外分光光度計從微觀角度研究了乙醇、氧化鈉、濃硫酸、氧處理對ito薄膜的表面性能和光電性能的影響。
  16. Plasma characteristics of a rf ion source are investigated by emission spectroscopy. the spatiotemporal spectral line intensities of the first three atomic lines in hydrogen bahner series ( = 656. 28, 486. 13, 434. 05nm ) of rf ion source plasma, are measured with calibrated optical multichannel analyzer ( oma ). some plasma parameters, including electron temperature, hydrogen atom density and hydrogen ion density, are calculated and analyzed using partial local thermodynamic equilibrium ( plte ) theory and abel transform

    實驗採用絕對定標后的光學多道分析系統( oma )測定了不同時間和空間位置的巴耳末譜線系中前三條譜線( = 656 . 28 , 486 . 13 , 434 . 05nm )的強度,並採用plte的理論和abel變換方法,計算出了高頻的電溫度、濃度、濃度參數在放電的不同階段和徑向分佈情況,並進行了簡要分析。
  17. By the essential control of the initial stage of - material growth, the high - quality crystal films can be obtained. by using mocvd technology, studies of some kinds of methods such as hydrogen - terminated, nitridation, plasma - assisted, growth of two stages and sputtering buffer layers have been conducted. by measuring of xrd, pl, sem and tem, and analysis of spectra of xrd, raman scatting, oa, and pl at different temperatures, we observed that the crystal quality has been improved markedly

    本文利用mocvd技術,採用各種對si襯底處理的方法,如終止法、氮化法、轟擊方法、兩步生長法、濺射緩沖層法進行了試驗與研究,通過x射線衍射技術( xrd ) 、光致發光技術( pl ) 、掃描電顯微術( sem ) 、透射電顯微術( tem )檢測,並對其x射線衍射光譜、拉譜光譜、吸收光譜及不同溫度下的光致發光光譜分析,發現外延晶的生長質量得到了明顯提高。
  18. The fourier transform infrared ( ftir ) spectrum is an effective technology for studying the hydrogen content ( ch ) and the silicon - hydrogen bonding configuration ( si - hn ) of hudrogenated amorphous silicon ( a - si : h ) films. in the paper, ch and si - hn of a - si : h films, fabricated at different ratio of h2 / sih4 by microwave electron cyclotron resonance plasma chemical vapor ( wmecr cvd ) method, have been obtained by analyzing their ftir spectra that are treated by baseline fitting and gaussian function fitting. the effects of ratio of h2 / sih4 on ch and si - hn are studied

    Fourier紅外透射( ftir )譜是研究化非晶硅( a - si : h )薄膜中含量( c _ h )及硅-鍵合模式( si - h _ n )最有效的手段,對于微波化學氣相沉積( mwecrcvd )方法在不同h _ 2 sih _ 4稀釋比下制備出的化非晶硅薄膜,我們通過紅外透射光譜的基線擬合、高斯擬合分析,得出了薄膜中的含量,硅鍵合方式及其組分,並分析了這些參數隨h _ 2 sih _ 4稀釋比變化的規律。
  19. The ci ~ - c : h film was prepared by the means of plasma assistance chemical vapor deposition with hydrocarbon n - butylamine ( ch3ch2ch2ch2nh2 ) as carbon source. the material of carbon source was carried into chemical vapor deposition chamber under pure hydrogen

    採用輔助化學氣相沉積方法,以碳化合物正丁胺( ch _ 3ch _ 2ch _ 2ch _ 2nh _ 2 )作為碳源物質,用高純氣作為載氣,將碳源物質攜帶進入反應室。
  20. A review with 37 references is given on the recent progress of selenium species analysis with emphases to the methods of separation and examination technology, e. g, chromatography, the hydride genetic method, inductive coupling plasma mass spectrum, the atomic spectrum

    摘要對近年來有關硒的形態分析的發展作了綜述,對新的分方法如色譜法、化物發生法、毛細管電泳和新的檢測技術如電感藕合質譜、原光譜給予較多的關注。
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