氫缺陷 的英文怎麼說

中文拼音 [qīngquēxiàn]
氫缺陷 英文
hydrogen defect
  • 氫 : 名詞[化學] （氣體元素） hydrogen （h）
  • 缺 : Ⅰ動詞1 （缺乏; 短少） be short of; lack 2 （殘缺） be missing; be incomplete 3 （該到而未到） be ...
  • 陷 : Ⅰ名詞1 （陷阱） pitfall; trap2 （缺點） defect; deficiency Ⅱ動詞1 （掉進） get stuck or bogged do...
  • 缺陷 : defect; fault; faultiness; vitium; lesion; flaw; disorder; imperfection; drawback; blemish
  1. The study of the structural water and the point defect related with hydrogen in eclogites from dabieshan

    大別山超高壓榴輝巖中的結構水及其氫點缺陷的研究
  2. The effect of hydrogen on the ductility of electroless copper deposit is primarily caused by molecular hydrogen contained in voids, particularly the type gb voids

    鍍層延展性降低的主要原因是由氫氣泡的缺陷效應，特別是第三類氫氣泡、晶粒邊界氣泡空穴。
  3. By increasing the h2 dilution ratio, it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase. from the study on the distance from substrate to catalyzer, choosing a proper distance can ensure the gas fully decomposed, while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes. the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier

    實驗結果表明：隨著工作氣壓的減小，薄膜的晶粒尺寸有所減小；通過提高氫氣稀釋度，利用原子氫在成膜過程中起的刻蝕作用，可以穩定結晶相併去除雜相；選擇適當的熱絲距離能保證反應氣體充分分解，又使襯底具有較高的過冷度，是形成納米薄膜的重要條件；採用分步碳化法可以提高形核密度，有利於獲得高質量的納米- sic薄膜；襯底施加負偏壓可以明顯提高襯底表面的基團的活性，因負偏壓產生的離子轟擊還能造成高的表面缺陷密度，形成更多的形核位置。
  4. By analyzing the part and fracture characteristic of sample, find the reason for this flaw is the choice of welding technology parameter is illogical ; welders don ' t grasp well the fibrin electrode ' s characteristics which distinguish with other low hydrogen electrodes, and usage isn ' t reasonable or operation isn ' t skilled

    通過分析試樣的取樣部位和刻槽錘斷試樣斷口的特點，發現產生缺陷的原因是焊接工藝參數選擇不合理；焊工未能很好地掌握纖維素焊條與其他低氫型焊條相區別的特性，運條不合理或操作手法不熟練。
  5. In the light of hydrogen manufacturing coverted furnace tube system ( including conversion tube, gas gathering tube and pigtail tube ) occuring weld fissure during manufacture and installation, the reason of fissure is analized. the repair plan and specific repair measures are recommended

    針對制氫轉化爐管系（包括轉化管、集氣管、豬尾管）在製造安裝過程中出現焊接裂紋的原因進行了分析，並介紹了缺陷的修復方案和具體修復措施。
  6. The research team of prof chan hsiao chang, director of the epithelial cell biology research centre, in collaboration with zhejiang academy of medical sciences, demonstrated that cystic fibrosis transmembrane conductance regulator cftr is involved in transporting bicarbonate into sperm, and thus, is vital to sperm fertilizing capacity and male fertility. cftr is an anion channel, mutations of which cause cystic fibrosis, a disease characterized by defective cl - and hco3 - transport with clinical manifestations in a number of organ systems

    由陳小章教授領導的香港中文大學上皮細胞生物學研究中心的研究人員，與浙江醫學科學院合作，證實囊性纖維化跨膜電導調節器（ cftr ）負責輸送碳酸氫根進入精子，對精子授精能力及男性生育能力非常重要； cftr是一個陰離子通道，其基因突變會導致囊性纖維化，因為氯離子和碳酸氫根（ hco3 - ）分泌缺陷，引發一系列器官病徵。
  7. Another possible reason for this phenomenon is that with higher temperature, the mobility near defects of carbon atoms in grown carbon nanotubes would be also elevated, which gave carbon atoms higher mobility and have chance to readjus to decrease or eliminate some defects. a series of pretreatments and modifications including purification, annealing and doping were performed before hydrogen storage experiments carried out at room temperature under modest pressure ( 12mpa )

    在氮氣中進行退火處理納米碳管的儲氫性能高於在空氣中退火的納米碳管，主要原因是在空氣中退火時，納米碳管的表面引入了大量的氧官能團，而氧官能團能夠占據納米碳管的缺陷位，減少了氫的可吸附位置，阻礙氫進入納米碳管，從而降低了納米碳管的儲氫能力。
  8. Liquid - hydrogen systems, which store the fuel at temperatures below - 253 degrees c, have been tested successfully but suffer from significant drawbacks : about one third of the energy available from the fuel is needed to keep the temperature low enough to preserve the element in a liquid state

    以- 253貯氫的液態氫系統已測試成功，但卻有重大的缺陷：燃料所產生的能量中，約有1 / 3必須用來維持低溫，使氫得以保持液態。
  9. To hydrogenated amorphous silicon ( a - si : h ), however, it has much less defects than non - hydrogenated a - si, for the sake of much hydrogen which eliminate the defects by making a bond with non - connected si bond. with these virtue, a - si : h accord with device quality. the films of a - si : h have widely used in solar cell, film transistor and flat display

    對于氫化非晶硅（ a - si : h ） ，由於氫通過無連接端的硅原子鍵合來消除缺陷，使得氫化非晶硅的缺陷密度比未氫化的非晶硅大大降低了，從而使氫化非晶硅符合器件級質量材料的要求。
  10. The photoelectric property of a - si : h films is closely associated with hydrogen content in films. on the one hand, hydrogen incorporated as monohydride ( si - h ) saturates dangling bonds in films, and on the other hand, hydrogen incorporated as polyhydride ( si - h2, si - h3, ( si - h2 ) n ) introduces defect in films and thus increases the density of localized electronic states in band gap

    A - si ： h薄膜的光電特性同膜中的氫存在密切關系，一方面，氫以單氫化合物（ si - h ）方式結合到膜中，從而飽和了膜中的懸掛鍵；另一方面，氫以多氫化合物（ si - h2 、 si - h3和（ si - h2 ） n ）方式結合到膜中，反而在膜中引入了缺陷，使帶隙中的局域態密度增大。
  11. Additional annealing experiments in nitrogen atmosphere revealed that the heavily damaged region with hydrogen - induced defects appears to be the adsorption center for the outside oxygen to diffuse into the silicon during the high - temperature annealing process, and consequently, broaden the thickness of the box layer. this important finding may provide a possible solution to reduce the cost of the conventional simox - soi wafers while maintaining a desirable box thickness

    獨特設計的氮氣氛退火及分步退火實驗證明了原注入樣品的缺陷層中氫及氫致缺陷的存在使得在退火過程中加速外界氣氛中的氧擴散進來，並成為強捕獲中心使擴散進來的氧滯留于缺陷層從而促使氧缺陷層中的氧沉澱生長，加速了高溫退火中的內部熱氧化過程，從而形成了比傳統相同劑量simoxsoi厚得多的氧化埋層。
  12. The genetic polymorphisms due to mutations in the methylene tetrahydrofolate reductase gene may increase the risk for ntds

    亞甲基四氫葉酸還原酶基因突變導致的遺傳多態現象可增加神經管缺陷（ ntd ）發生的危險性。
  13. Hf + hno3 water solution can be used for corroding of metallographic sample of martensitic stainless steel, corroding efficacious is the same as its of 4 % nitric acid alcohol solution, corroding speed is quick and corroding test surface is clear, similar discoloration made on test surface can be avoided when fecl + hcl water solution is applied

    摘要介紹了用氫氟酸、硝酸水溶液侵蝕劑侵蝕馬氏體不銹鋼，侵蝕速度快且侵蝕試面清澈，避免了氯化高鐵、鹽酸水溶液對侵蝕面造成的污跡缺陷。
分享友人
分享到 Line

分享到臉書