氫退火 的英文怎麼說

中文拼音 [qīngtuìhuǒ]
氫退火 英文
hydrogen annealing
  • 氫 : 名詞[化學] （氣體元素） hydrogen （h）
  • 退 : 動詞1 （向後移動） retreat; draw back; move back 2 （使向後移動） cause to move back; remove; wit...
  • 火 : fire
  • 退火 : [冶金學] anneal; annealing; back-out
  1. Such as 180 t oxygen converter, 1550 250 mm plate suspending straightening machine, annealing furnace of the whole hydrogeb mask, 1250mm cantalever straightener etc.

    如180t氧氣頂吹轉爐， 1550250mm板坯連鑄機， 1829球磨機，全氫罩式退火爐， 1250mm懸臂矯直機等。
  2. Ultrafine powder, the high quality ultrafine power has been got. ( 2 ) the perfect rutile has been got with flame fusion method in developed domestic sjz sintering machine, and the technology of crystal growth has been clearly analyzed. in the end the suitable techniche has been got on the basis of systemic study on the conditions of growth

    通過對晶體生長中的籽晶方向、氣氛等的作用的大量深入的研究，得出了金紅石晶體焰熔法生長現階段的最佳工藝條件，即籽晶（ 001 ）在氫氧比為1 ： 1的附近，通過加氫進行擴肩，然後在1450加氧退火24hr后就能夠獲得完整透明的金紅石單晶。
  3. Sims depth profile analysis on the as - implanted wafers showed that there are two hydrogen enrichment peaks around both sides of the projected range ( rp ) of oxygen, which correspond to the two interfaces of the box layer of the annealed samples

    Sims結果表明水離子原注入樣品中的氫分佈出現了明顯的雙峰分佈狀態，這兩個峰的峰位分別位於注入氧分佈濃度峰值rp的兩側，並且與退火樣品的氧矩形分佈的兩邊位置基本重合。
  4. A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. after annealing, vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained. the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5, so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation

    利用離子束增強沉積設備，在ar ~ +離子束對v _ 2o _ 5靶濺射沉積的同時，用氬、氫混合束對沉積膜作高劑量的離子束轟擊，使得被氬離子轟擊后斷鍵的氧化釩分子，再被注入氫降價，然後經適當的退火，成功地制備了熱電阻溫度系數高達4的vo _ 2薄膜（國外報道值為2 - 3 ） ，並研製了單元懸空結構探測器和8 1 ， 16 1線性陣列。
  5. The sims, ir and raman analysis results show that the tritium permeation barrier ( tpb ) is formed when tic and sio2 films are annealed in hydrogen at about 350 ?

    利用二次離子質譜（ sims ） 、紅外吸收光譜（ ir ）及激光喇曼光譜（ raman ）技術，證實了tic和sio2在350左右的氫中退火可形成防氚滲透阻擋層。
  6. Another possible reason for this phenomenon is that with higher temperature, the mobility near defects of carbon atoms in grown carbon nanotubes would be also elevated, which gave carbon atoms higher mobility and have chance to readjus to decrease or eliminate some defects. a series of pretreatments and modifications including purification, annealing and doping were performed before hydrogen storage experiments carried out at room temperature under modest pressure ( 12mpa )

    在氮氣中進行退火處理納米碳管的儲氫性能高於在空氣中退火的納米碳管，主要原因是在空氣中退火時，納米碳管的表面引入了大量的氧官能團，而氧官能團能夠占據納米碳管的缺陷位，減少了氫的可吸附位置，阻礙氫進入納米碳管，從而降低了納米碳管的儲氫能力。
  7. Both hydrogen plasma and sinx thin film can effectively enhance the short circuit current density of mono and poly silicon solar cells, which cause the improvement of the absolute transfer efficiency about 0. 5 % ~ 2. 9 %. depositing sinx thin film followed by hydrogen plasma treatment will result in better passivation effect. the thickness of sinx thin film will decrease and the refractive index will increase after annealing

    經過薄膜後退火處理發現，氮化硅薄膜經熱處理后厚度降低，折射率升高，但溫度達到1000oc時折射率急劇降低；沉積氨化硅薄膜后400oc退火可以促進氫擴散，提高鈍化效果；超過400oc后氫開始逸失，晶體硅材料中的少子壽命急劇下降； rtp （快速熱處理）處理所導致氫的逸失比常規退火處理顯著。
  8. Additional annealing experiments in nitrogen atmosphere revealed that the heavily damaged region with hydrogen - induced defects appears to be the adsorption center for the outside oxygen to diffuse into the silicon during the high - temperature annealing process, and consequently, broaden the thickness of the box layer. this important finding may provide a possible solution to reduce the cost of the conventional simox - soi wafers while maintaining a desirable box thickness

    獨特設計的氮氣氛退火及分步退火實驗證明了原注入樣品的缺陷層中氫及氫致缺陷的存在使得在退火過程中加速外界氣氛中的氧擴散進來，並成為強捕獲中心使擴散進來的氧滯留于缺陷層從而促使氧缺陷層中的氧沉澱生長，加速了高溫退火中的內部熱氧化過程，從而形成了比傳統相同劑量simoxsoi厚得多的氧化埋層。
  9. The results show that through batch annealing after cold rolling, the steels exhibit excellent drawability and enamel ability

    因此綜合考慮，採用罩式退火工藝可實現成型性能和貯氫性能的良好匹配。
  10. Research progress of rapid quenching and annealing of rare earth - based hydrogen storage alloys

    稀土系貯氫合金的快淬及退火研究進展
  11. The effects of batch annealing ( ba ) and continuous annealing ( ca ) on mechanical properties and hydrogen storage property of ultra - low - carbon enamelled steels were investigated

    摘要研究了兩種不同退火工藝罩式退火和連續退火工藝對含鈦超低碳搪瓷鋼板成型性能和貯氫性能的影響。
  12. The results provide guidance for optimizing the h2 - loading technique. 3. the fbg was fabricated and the relation between h2 - loading condition and performances of fbg was discussed ; the effects of annealing on fbg were studied

    三、對不同載氫條件的光纖刻入光纖光柵，探討載氫條件與光柵性能的關系，研究退火對光纖光柵性能的影響，所得到的結論對製作光柵提供了依據。
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