氮化層 的英文怎麼說
中文拼音 [dànhuàcéng]
氮化層
英文
nitration case-
The nitride on oxide layers remains intact.
氧化物表層上面的氮化物保持原狀不動。1. two kinds of azo pigments with excellent photosensitivity, named as flurenone bisazo ( f - azo ) and oxazole bisazo ( o - azo ), are synthesized. the preparation of organic photoconductive blended materials and their photoconductivity in single - layered photoreceptors made from f - azo / titanium oxide phthalocyanine ( tiopc ) composite and o - azo / tiopc, respectively, are investigated
合成了芴酮基偶氮( f - azo )與?唑基偶氮( o - azo )兩種光敏性優良的偶氮化合物,並以此制備了芴酮基偶氮酞菁氧鈦和?唑基偶氮酞菁氧鈦復合光電導材料體系及其單層光電導體。It is reasonably designed and easily managed ; it can plate many kinds of membranes that multi - arc machine can not do, such as bnb - black, pearl black and different azotizing, oxidizing membranes with top - grade quality and combination, fit for the decorative and tools plating
二特點該設備結構合理,操作簡單,可以鍍制各種多弧鍍膜機無法完成的膜層,槍黑珍珠黑及各種氮化氧化膜層,膜層細膩,結合力好,廣泛用於裝飾鍍膜及工具鍍膜。An improvement on the properties of cold punch by cr - based metal nitride hard coating
基金屬氮化物塗層改善冷沖模性能的研究2 studying of the properties of cbn thin films afm showed that cbn thin film delaminated from substrate obviously. basing xps, we calculate the nib ratio to be 0. 90 that is closing to unity, and the thickness of hbn layer on cbn layer that is about 0. 80 nm
根據x射線光電子能譜,計算得到立方氮化硼薄膜中的n和b的原子數比為0 . 90 ,接近理想化學配比1 ;立方氮化硼薄膜頂層的六角氮化硼的厚度約為0 . 80nm 。The central concept of alfisols is that of soils that have an argillic, a kandic, or a nitric horizon and a base saturation of 35 % or greater
淋溶土的主要特性是有粘化層,高嶺層或氮化層和鹽基飽和度達35或以上。Due to good chemical stability and electrical resistivity, high thermal conductivity and mechanical intensity, wide band gap and low thermal expansion coefficient, aln thin films can be applied for insulating chips for semiconductor devices with high power, thermal dissipation lagers for large and super - large scale integrated circuits, insulating layers or passivation layers for semiconductor
超薄鋁膜由於其特殊的的光學性質,在光學多層膜上有廣泛應用。氮化鋁薄膜化學穩定性高、熱傳導率高、機械強度高、電絕緣性能佳、高能隙、熱膨脹系數低,光學特性優良,可以用作大功率的紫外光學器件的散熱材料。There are a lot of methods for measuring nitriding depth, incluing structural corrosion method
現有的測量氮化層深度的方法很多,國內大多數採用組織腐蝕法。Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )
本論文主要論述了在espd - u裝置上,採用電子迴旋共振等離子體增強mocvd ( ecr - pamocvd )方法,在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝,包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長;通過高能電子衍射、 x射線衍射和原子力顯微鏡測試,並且對這些測試結果進行了詳細的比較研究,得出了較優化的工藝條件,生長出了晶質較好、表面較平整的aln外延層;進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制,我們沒有能夠生長出原子級平滑的aln外延層表面,因而沒能夠生長出密度比較大和直徑比較小的量子點。The results showed that the friction factor of bn film was about half of that of the steel based materials, and the cohesion between film and substrate could obviously be increased by the ni - p interface layer
結果表明:氮化硼薄膜的摩擦因數約為鋼基材料的一半,中間層鎳磷合金的加入使薄膜結合力顯著提高。Through many comparative experiments, the chemical polishing corrosion method was explored in order to showing nitriding depth, by which can increase the measuring accuracy and be cost - effective
筆者進行了大量的對比試驗,採用化學拋光腐蝕的方法,改善了氮化層深度的顯示效果,提高了檢測精度,節約了資金。We also have outstanding talented experts in china, which form a software base to produce high - quality piston rings. anqing diamond pays a special attention to its nit riding, and the nitride piston rings have been highly honoured for its features. namely high modulus of elasticity, heat - resisting, wear - resisting etc
值得一提的是,帝邁德擁有卓越超群的氣體氮化加工工藝,使帝邁德氮化環的各項性能指標彈性模數熱穩定性耐拉缸性氮化層硬度深度和脆性等獲得國際同行界的高度評價,達到國際領先水平。We researched fabrication at different asputtering and annealing atmosphere, the different process conduced different electrical properties. we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4. the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc. there are different leakage current mechanism at influence of sil. c ; 5
研究表明,在優化工藝條件下制備的hfo _ 2介質層中,襯底注入條件下由於其較低的體和界面缺陷密度,漏電流的輸運機制主要以schottky發射為主; silc效應導致hfoz / si界面缺陷態的增加,從而使得襯底注入條件下,柵泄漏電流機制不僅有schottky發射還有f一p發射機制起主要作用; 5 )初步研究了氮化的hfo : ( hroxny )柵介質的電學特徵。For the first time, we reported the barrier height of au / algan is 1. 08ev by analysis on various i - v curves under corresponding temperatures. 3 ^ we reported oriented polycrystalline gan on silica substrates using a new method named ga nitridation
3 、採用金屬鎵層氮化技術,利用我們自行改造的熱蒸發設備和氨氣氮化設備,在無定形石英襯底上生長出具有擇優取向的多晶gan ,取得了一些階段性的成果。A design of using lpcvd silicon - rich silicon nitride of low residual stress as the resonant beam is proposed based on technology of sacrificial porous silicon and a new type peninsula structure is also proposed for high pressure sensitivity
提出了基於多孔硅犧牲層技術的利用lpcvd生長的低應力厚的富硅氮化硅作為諧振梁的壓力傳感器結構設計。為了提高靈敏度,還提出了一種半島結構。A convenient and effective testing system for plastic eacapsulated microcircuit is designed. the testing results show that si3n4 passivation on test chip has the better protection than that without si3n4 passivation, and silicone gel coating can prevent moisture from the surface of the chip more effectively than polyimide coating, and molded plastic from varied manufacturers has the different effect on microcircuit due to its diversity
貯存試驗的結果表明,在晶元上加氮化硅鈍化層比不加鈍化層具有更好的防護效果;與聚酰亞胺膠內塗層相比,硅酮膠內塗層更能有效地阻止水分到達晶元的表面;由於材料本身的差異,不同廠家生產的模塑封裝材料對微電路的影響也不同。The thesis focuses on the manufacture practice and the characteristic of ionic nitriding. the emphasis is placed on the research of plasma nitriding principle, nitriding technics and operation, test on the microstructure and performance of the nitrification layer
該課題著力于生產實踐,圍繞離子氮化技術特點,注重理論聯系實踐,介紹了等離子滲氮原理、滲氮工藝和操作、離子滲氮層組織性能的檢測。Series hv / hvs vickers hardness tester, that is composed of precision mechanism, optical system and electric technology, is used to measure vickers hardness of either metallic materials or non - metallic materials
Hvs系列維氏硬度計是由精密機械,光學系統和先進技術萃合而成的材料硬度測定儀器,用於測定黑色金屬、硬度合金、有色金屬、表面滲氮層、氮化或非金屬材料的維氏硬度,可用於各行各業的金屬材料、大專院校等。Thin sin layers and nitride - based multiquantum well ( mqw ) light emitting diode ( led ) structures with conventional single gan buffer and gan / sin double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition ( mocvd )
摘要以有機金屬化學氣象沉積在藍寶石基板上成長由單一氮化鎵成核層與氮化鎵/氮化矽雙緩沖層所形成的兩種不同氮基礎的多層量子井發光二極體結構。It adopts the intermediate frequency power ; it not only can plate single films or multilayer membrane, such as titanium nitrides, titanium carbide, zirconium nitrides, chromium nitride, titanium, nickel, chromium and copper etc. but also can plate the ito, al2o3, sio2, tio2 and zro etc. furthermore, it can plate multilayer membrane after being equipped with multi - targets with top grade quality and fast speed, as well as advantages of other plating methods ; therefore it is one super - hard membrane equipment with excellent performance
採用先進的中頻電源,濺射速度快,不但可以鍍制氮化鈦碳化鈦氮化鋯氮化鉻及鈦鎳鉻銅金銀等等單一膜層或復合膜層,而且可以鍍制銦錫合金ito氧化鋁al2o3二氧化硅sio2氧化鈦tio2氧化鋯zro等等膜層,另外其配置多靶可以鍍制多層膜,不但鍍制膜層細膩而且鍍制速度非常快,兼有其他鍍法的優點,所以是一種性能非常優良的鍍制超硬膜設備。分享友人