氮化硼 的英文怎麼說

中文拼音 [dànhuàpéng]
氮化硼 英文
borazon
  • 氮 : 名詞[化學] nitrogen （7號元素, 符號n）
  • 硼 : 名詞[化學] （非金屬元素） boron （b）
  1. Cubic boron nitride ( cbn ) is a synthesized wide - band - gap iii - v compound semiconductor and has lots of excellent physical and chemical properties. it has been attracted a nice bit of attention for years because of its application in mechanics, calorifics, optics and electronics

    立方氮化硼（ cbn ）是一種人工合成的寬帶隙-族化合物半導體材料，它有許多優異的物理化學性質，在力學、熱學、光學、電子學等方面有著非常誘人的應用前景，多年來一直吸引著國內外眾多研究者的興趣。
  2. Cbc metal - covered boron nitride

    Cbc -金屬被覆氮化硼
  3. Our products are made of selected excellent diamond, of all kinds and sizes, ready to meet the different requirements from our customers. ourmain products are diamond, cubicborazin, emery wheel, needle files, grinding paste, alloy molds and soon

    本公司產品選用優質金剛石精製而成，品種多，規格齊，能滿足不同廠商的要求，主要產品有金剛石、立方氮化硼、砂輪、什錦銼、研磨膏、合金模具等。
  4. Review of the present research on brazed monolayer cbn wheels

    釬焊立方氮化硼砂輪的研究評述
  5. Types of synthetic diamond and cubic boron nitride

    人造金剛石和立方氮化硼品種
  6. On the ultrahard tool materials - diamond and cubic boron nitride

    金剛石與立方氮化硼
  7. Influence of powder pressed pyrophyllite and its roasting technology on cbn monocrystal synthesizing

    粉壓葉臘石及其焙燒工藝對合成立方氮化硼單晶的影響
  8. Production : monomer boron, danhuapeng, boron anhydride, without detectable ; hydrochloric acid, yean, ammonia water

    生產：單體硼，氮化硼，硼酐，無水硼砂；鹽酸，液氨，氨水。
  9. The refractive index ( at 632. 8nm ) of cbn thin film with 92. 8 % cubic phase content is measured to be2. 19 by ellipsometer

    用橢偏儀測得，對于波長為632 . 8nm的光，立方相含量為92 . 8的氮化硼薄膜的折射率為2 . 19 。
  10. Ti ： fabrication of boron nitride ceramic fibers from alkylamino borazine polymer precursors by fiber drawing and heat - treatment. inventors ： miele, philippe ; toury, berangere ; bernard, samuel, etc

    摘要：本文研究了含有高密度連續碳纖維氮化硼纖維復合材料的制備方法。探討了碳纖維與氮化硼纖維不同排布對復合材料性能的影響。
  11. The i - v and c - v characteristics of bn ( n - type ) / si ( p - type ) heterojunctions have been studied to close to that of ideal heterojunct ion. 6 in this paper the mechanism of cbn formation and bn films n - type doping as well as bn ( n - type ) / si ( p - type ) conducting

    6文章還對立方氨化硼薄膜的成核和生長機理，氮化硼薄膜的n型摻雜機制和bn型）侶i …型）異質結的電流輸運機制進行了探討。
  12. Abrasive products - diamond or cubic boron nitride grinding tools - form and dimensions

    超硬磨料製品金剛石或立方氮化硼磨具形狀和尺寸
  13. Superabrasive products - rotating grinding tools with diamond or cubic boron nitride - general survey, designation and multilingual nomenclature iso 6104 : 2005

    超磨料製品.帶金剛石或立方氮化硼的旋轉磨削工具.一
  14. Superabrasive products - rotating grinding tools with diamond or cubic boron nitride - general survey, designation and multilingual nomenclature

    高強度磨料製品.金剛石或立方氮化硼旋轉磨削工具.一般評述名稱和多種語言術語
  15. Target material was hexagonal boron nitride ( hbn ) and working gas was pure argon

    用射頻濺射法在si襯底上制備立方氮化硼，靶材為hbn ， 。工作氣體為氬氣。
  16. Boron nitride ( bn ) thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system, with hexagonal boron nitride ( hbn ) target and working gas of argon ( or mixture of nitrogen and argon )

    使用射頻濺射（ rf ）系統，靶材為燒結的六角氮化硼（ hbn ） ，工作氣體為氬氣（或氬氣和氮氣的混合氣） ，在硅襯底上沉積氮化硼薄膜。
  17. 2 studying of the properties of cbn thin films afm showed that cbn thin film delaminated from substrate obviously. basing xps, we calculate the nib ratio to be 0. 90 that is closing to unity, and the thickness of hbn layer on cbn layer that is about 0. 80 nm

    根據x射線光電子能譜，計算得到立方氮化硼薄膜中的n和b的原子數比為0 . 90 ，接近理想化學配比1 ；立方氮化硼薄膜頂層的六角氮化硼的厚度約為0 . 80nm 。
  18. 1 successively depositing cbn thin films on si substrates which reaches international advanced level, the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied. boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system. the target was hexagonal boron nitride ( hbn ) of 4n purity, and the working gas was the mixture of nitrogen and argon

    研究了襯底負偏壓和射頻功率對制備立方氮化硼薄膜的影響立方氮化硼薄膜沉積在p型si （ 100 ） （ 8 15 cm ）襯底上，靶材為h - bn靶（純度達99 . 99 ） ，濺射氣體為氬氣和氮氣混合而成，制樣過程中，襯底加直流負偏壓。
  19. Quick synthesis of bn by the deflageration of energetic material

    含能材料爆燃快速合成氮化硼的初步研究
  20. Diamond and products - specification for diamond and cubic boron nitride abrasive grinding wheels

    金鋼石磨料製品.第1部分:正方氮化硼砂輪規范
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