氮射流 的英文怎麼說

中文拼音 [dànshèliú]
氮射流 英文
nitrogen jet
  • 氮 : 名詞[化學] nitrogen （7號元素, 符號n）
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  1. The experiments of high speed milling of titanium alloy were conducted under different cooling and lubricating modes, i. e. dry milling, flood coolant, oil mist with nitrogen gas, cryogenic nitrogen gas jet, and cryogenic nitrogen gas jet with minimal quantities of lubricant

    在干銑削、澆注切削液、常溫氮氣油霧、低溫氮氣射流和低溫氮氣射流結合微量潤滑等冷卻潤滑條件下進行了鈦合金的高速銑削對比試驗。
  2. 1 successively depositing cbn thin films on si substrates which reaches international advanced level, the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied. boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system. the target was hexagonal boron nitride ( hbn ) of 4n purity, and the working gas was the mixture of nitrogen and argon

    研究了襯底負偏壓和射頻功率對制備立方氮化硼薄膜的影響立方氮化硼薄膜沉積在p型si （ 100 ） （ 8 15 cm ）襯底上，靶材為h - bn靶（純度達99 . 99 ） ，濺射氣體為氬氣和氮氣混合而成，制樣過程中，襯底加直流負偏壓。
  3. Of the currently available coolers for electronic products with a high heat flux, micro - jets impingement cooling heat sinks are able to provide the best heat transfer performance : lowering the maxmal temperature and the temperature difference. the heat transfer for multiple jets impingement has been studied firstly for summarizing a few rules. and then a copper micro - jets impingement cooling heat sink consisting of five copper sheets is designed in this paper and the jet diameter is 0. 15mm

    本文首先對陣列射流沖擊進行了實驗研究，總結了陣列射流沖擊的一些規律和特性，在此基礎上，根據數值模擬優化結果設計和製作了微射流陣列冷卻熱沉（射流孔直徑d = 0 . 15mm ） ，並採用去離子水和氮氣作為工質，對熱沉內流體壓降和傳熱特性進行了研究。
  4. We researched fabrication at different asputtering and annealing atmosphere, the different process conduced different electrical properties. we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4. the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc. there are different leakage current mechanism at influence of sil. c ; 5

    研究表明，在優化工藝條件下制備的hfo _ 2介質層中，襯底注入條件下由於其較低的體和界面缺陷密度，漏電流的輸運機制主要以schottky發射為主; silc效應導致hfoz / si界面缺陷態的增加，從而使得襯底注入條件下，柵泄漏電流機制不僅有schottky發射還有f一p發射機制起主要作用; 5 ）初步研究了氮化的hfo : （ hroxny ）柵介質的電學特徵。
  5. It has been pointed out that for the application of cryogenic nitrogen gas jet in high speed milling of titanium alloy, unless the chipping and fracture caused by thermal cracks take place, the reduced temperature of cryogenic nitrogen gas will prolong the tool life

    指出在低溫氮氣射流條件下高速銑削鈦合金時，只要熱裂紋的形成與擴展未引起刀具的崩刃及刀面的剝落，進一步降低低溫氮氣的溫度將提高刀具的使用壽命。
  6. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  7. Films of the cnx nanotube were produced by thermal decomposition on fe - coated si substrates, and their low field emission properties have been investigated. a high - emission current density of 1. 28ma / cm2 for an applied field of 2. 54v / u m was achieved, implying cnx nanotubes have better electron field emitter properties than the films of carbon tubes and bcn tubes do under same experiment conditions

    860熱解乙二胺，在沉積有鐵催化劑的矽片上生長出cn _ x納米管薄膜，並進行了低場致電子發射特性測試，外加電場2 . 54v / m時，發射電流達到1 . 28ma / cm ~ 2 ，比相同實驗條件下制備出的碳管、硼碳氮管薄膜的場致電子發射性能優越。
  8. The use of cryogenic nitrogen gas jet to reduce the temperature of cutting zone and to avoid oxidation wear of tool in high speed milling titanium alloy was presented

    為降低切削區溫度、防止刀具的氧化磨損，提出在低溫氮氣射流條件下進行鈦合金的高速銑削加工。
  9. Therefore, the diagnostics of electrical and optical characteristic of plasma form the basic respects of plasma diagnostics. the author reports in detail in the dissertation the experimental investigation on the phenomena of some common discharge systems at typical operation status such as dc glow ; rf ( radio frequency ) glow and microwave ecr ( electron cyclotron resonance ) discharge

    創新之處： （ 1 ）提出了雙原子分子轉動分辨發射光譜的擬合方法，並利用擬合方法進行了氮氣直流輝光放電產生的第一負帶轉動分辨光譜和磁控濺射沉積cnx膜過程中cn基團的振動帶的轉動線型擬合，獲得了相應的轉動溫度。
  10. The results indicate that it has an excellent surface. aln thin film was prepared from an aluminum target by dc and af reactive magnetron sputtering in nitrogen gas mixed with argon gas

    氮化鋁薄膜樣品是利用高純鋁靶，在氮氣加氬氣氣氛下用直流和射頻反應磁控濺射法制備的。
  11. The experiments indicate that the deposition rate will increase with the increase of the flow ratio of sihu / nhs, slightly decrease with the increase of substrate temperate, and increase obviously with the increase of rf power

    氮化硅薄膜的折射率隨硅烷氨氣流量比增大而增大，隨溫度升高而略有增加，隨淀積功率增大而略為降低。
  12. By the pecvd ( plasma enhanced chemical vapor deposition ) system and the reactants of silane and ammonia, silicon nitride thin film with excellent anti - reflective and passivation effects was prepared. the relatively optimum parameters for depositing sinx thin film and the basic physical and chemical properties of sinx were investigated. the effects of substrate temperature, the flow ratio of silane over ammonia and the rf power on the refractivity and deposition rate were researched

    實驗表明，氮化硅薄膜的沉積速率隨硅烷氨氣流量比增大而增大，隨溫度升高而略有降低，隨淀積功率增大而明顯增加；在襯底溫度300 ，射頻功率20w和硅烷氨氣流量比為1 ： 3的條件下氮化硅薄膜的沉積速率大約為8 . 6納米分。
  13. Keywords : gims, ion source, anode layer, sputtering, tin, ion plating ， medium frequency, pulsed dc

    中文關鍵詞：氣離濺射、離子源、陽極層流、濺射、氮化鈦、離子鍍膜、中頻、脈沖直流。
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