波激發器 的英文怎麼說

中文拼音 []
波激發器 英文
wave-exciting device
  • : Ⅰ名詞1 (波浪) wave 2 [物理學] (振動傳播的過程) wave 3 (意外變化) an unexpected turn of even...
  • : Ⅰ動詞1 (水因受到阻礙或震蕩而向上涌) swash; surge; dash 2 (冷水突然刺激身體使得病) fall ill fr...
  • : 名詞(頭發) hair
  • : 名詞1. (器具) implement; utensil; ware 2. (器官) organ 3. (度量; 才能) capacity; talent 4. (姓氏) a surname
  • 激發 : 1 (使奮發) arouse; stimulate; set off; stir up 2 [物理學] excitation; exciting; incitement; inc...
  1. The he-cd laser, which is a recent arrival on the scene, emits at 325. 0 nm and 441. 6 nm.

    最近出現的HeCd在3250納米和4416納米的長上射。
  2. Then novel circuit structure of bi - directional voltage mode ( based on forward converter ) inverters with high frequency link, are proposed, which is constituted of input cycloconverter, high frequency transformer, output cycloconverter, input and output filter ; the circuit topologies family of this bi - directional voltage mode inverters with high frequency link include six circuit topologies, such as push pull - full wave mode, push pull - full bridge mode, half bridge - full wave mode, half bridge - full bridge mode, full bridge - full wave mode, and full bridge - full bridge mode etc. taking full bridge - full bridge mode circuit as an example, principle of uni - polarity phase shifting controlled bi - directional voltage mode inverters with high frequency link is introduced

    本文首先論述了dc / ac逆變技術的應用前景及展現狀。基於正forward變換的雙向電壓源型高頻環節逆變電路結構,由輸入周變換、高頻變壓、輸出周變換、以及輸入、輸出濾構成;雙向電壓源高頻環節逆變電路拓撲族,包括推挽全式、推挽橋式、半橋全式、半橋橋式、全橋全式、全橋橋式六種電路。
  3. " for fundamental work in the field of quantum electronics, which has led to the construction of oscillators and amplifiers based on the maser - laser principle

    在量子電子學領域的基礎研究成果,為微明奠定理論基礎
  4. A new laser source of optical communication, erbium - ytterbium codoped phosphate glass waveguide laser that was provided with more prominent performance than semiconductor distribution feedback ( dfb ) laser, has been investigated globally from 1990s. the laser can meet many rigorous demands of wdm systems. the 1. 54 m laser emitted by the laser accords with the interrelated standard of international telecommunications union ( itu ), therefore, a splendent foreground can be predicted about this kind of laser in future optical communication

    基於鉺、鐿摻雜磷酸鹽玻璃基片的光是一種新型通信光源,具有傳統的分佈反饋半導體所不能比擬的優點,能滿足分復用/密集分復用技術對光源提出的諸多高新要求,所射的1 . 54 m光符合國際電信聯盟規范,在未來光通信中有著廣闊的展前景。
  5. The light guiding unit on the surface is composed of sub - micron gratings whose transmission wavelengths are red, green and blue in order. the light source are red 、 green 、 blue led or semiconductor laser array. to enhance the light utilization, the surfaces of light guide plate except the incident and transmitted surfaces are coated with metallic film

    本文設計的亞微米光柵型導光板為矩形狀的,導光板上表面的導光單元是由三套出射光主長分別是紅光632 . 8nm ,綠光521nm ,藍光441 . 6nm的亞微米光柵組成,光源採用的是紅、綠、藍三色光二級管或者半導體陣列,為了提高光能利用率,除入光面和出光面外,導光板其餘面都鍍上金屬膜。
  6. The outlines of thesis are as follows : for the configuration of gis and the characteristic of partial discharge, the thesis analyses the electromagnetic waves excitated by the pd signal and the reason of a coupler built in gis inducing pd signal in terms of the electromagnetic theory and antenna theory

    主要工作有:針對gis結構及內部局部放電特點,分析了生局部放電后信號所的電磁傳輸特性,並從電磁場理論及天線理論角度分析內置傳感的局部放電耦合原理。
  7. The he - cd laser, which is a recent arrival on the scene, emits at 325. 0 nm and 441. 6 nm

    最近出現的he ? cd在325 0納米和441 6納米的長上射。
  8. In this work of part 1, as a main body of this dissertation, multiple experimental methods are applied to investigate the optical properties of gap1 - xnx alloys with the n composition varying from 0. 05 % to 3. 1 %. in part 2, the transient photoluminescence of iii - v semiconductor gainp and algainp alloys are studied

    隨著與氮有關的化合物半導體在短件(如藍色光二極體和紫色件等)方面的巨大應用潛力和展, gapn作為一種新型的含氮-族化合物半導體材料,其光電性質引起了人們的關注。
  9. The he - ne laser with the wavelength of 632. 8nm, when was interacting on the pd wire, which loading ratio is 0. 6, we gain the apparent " excess heat " by the excitation

    而且,在he - ne出的長為632 . 8nm光的照射作用下,在充氫率為0 . 6時,曾一度觀測出明顯的「過熱」現象。
  10. With the rapid development of optical fiber communication technology, low - cost and high quality near infrared laser and light emitted diode working at room temperature become widely available. the emit wavelength from these light resource is not only consistent with the three low - decay windows of fiber optics, but also with many wide - frequency or recombination absorption spectrum of environmental and industrial gases

    光纖通信技術的展使相對低價、工作于常溫、高質量的近紅外光二極體可廣泛獲得,這些光光源的長與光纖的三個低損耗窗口相一致,也與許多環境和工業氣體的泛頻或復合吸收譜線相一致。
  11. In this paper, micro - cavity semiconductor laser ( mcsl ) with pillar vertical - cavity surface - emitting structure ( vcsel ) which has potential applications in optical communication and optical interconnect is theoretically analyzed, the calculation model that used to discuss the modal performance of rectangular columnar and cylinder vcsel with oxidized aperture is established by using vector field model. the numerical simulations in the case of cylinder structure show oscillating wavelength and threshold gain against inside and outside radius of laser, the layer refractive index and pair number of bragg mirror, thickness, position and oxidized material ' s refractive index of oxidized aperture, in detail. more practically, considering dos shell of laser as non - perfect one, or supposing that dos shell is separated from the laser, we can obtain more significative results

    本工作以矢量場模型出,對具有誘人應用前景的柱形垂直腔面射結構( vcsel )的微腔半導體( mcsl )進行了理論分析,建立了用於分析方柱形和圓柱形結構具有氧化孔徑層的的模式特性的理論模型;對圓柱形結構情況進行了數值模擬,得到了振蕩長、閾值增益隨內外半徑、 bragg反射鏡層折射率、周期數以及氧化孔徑層厚度、位置和氧化物折射率的詳細變化規律;為使理論計算更接近實際,將外加金屬包殼視為非理想導體,或將金屬包殼與結構隔開,分別對這兩種情況下的結果進行了討論。
  12. For the wave - guide of sch - sqw 940nm quantum well laser, we used this way to simulate and compare, got the far - field corner 35. 8 when the al percent was 25 % and wave - guide ' s thickness was 150nm. compare with the results former, this value was improved much

    對于本文中採用的分別限制單量子阱長940nm半導體導結構,利用該理論方法進行模擬對比后,得到當導層al組分為0 . 25寬度為150nm時遠場散角為35 . 8 ,較以往有很大的改善。
  13. It has a broader absorption band at 808 nm which is emitted by laser diode ( ld ). therefore, nd : cngg is suitable for ld pumping, the ld pumped all solid - state lasers can be made by using nd : cngg. in this study, nd : cngg single crystals of 25mm in diameter and above 80mm in length were successfully grown by the automatically pulling method from the melt

    摻釹鈣鈮鎵石榴石(簡稱nd : cngg )是一種新型光晶體,該晶體熔點低( 1470 ) ,具有無序結構,在通用的808nm半導體光二極體( ld )長區有寬吸收帶,因此很適合ld泵浦,可做成ld泵浦全固態
  14. In order to get the optimal wavelength pairs for two - color satellite laser ranging, with the factors including atmosphere effect, the response of the receiver and the laser considered, beginning with the precision of atmosphere correction, based on the lidar equation, the wavelength figure of merit, which can determine whether the pair is selected properly, is obtained

    摘要為獲得雙長衛星光測距的最佳長組合,考慮了大氣效應、接收光電件的響應、等因素,從大氣改正精度出,利用光雷達方程,得到了評價長組合優劣的長優數公式。
  15. According to the principles of piezoelectric smart concrete structure health monitoring, a mathematic model of monitor system for static performances is discussed. then, the virtual waveform generator based on dds is designed using a data acquisition card and a pc to supply multiform excitation signals to piezoelectric elements in experiment. the theoretical analysis and experimental research demonstrate the performances of the waveform generated by the virtual instrument

    為了給壓電元件提供多種類型的勵信號,根據直接數字合成原理,設計了利用數據採集卡和計算機實現dds生的虛擬儀,並對生成形的各方面性能進行了理論分析和實驗研究,從理論和實驗兩個方面分析了這種生方式所能取得的效果。
  16. By use of g. d. shen ' s tunneling cascade theory we have fabricated high performance and high power tunneling cascade ingaas / gaas / algaas 950nm / 990nm double wavelength strained quantum well lasers on the basis of former tunneling cascade high power lasers and high brightness light emitting diodes. the lasers " two peak wavelength are 95 ? nm and 990 ? nm. el spectrum ' s fwhm is 3nm

    在以往隧道級聯大功率應變量子阱及高亮度光管的理論研究與實驗的基礎之上,採用沈光地教授提出的隧道級聯思想,成功研製出基於ingaas gaas algaas材料的高性能大功率隧道級聯950nm及990nm雙長應變量子阱長分別為952 2nm和990 2nm , el譜的譜線寬度約3nm ,未鍍膜件單面最大輸出光功率可達2w以上,閾值電流最低達120ma 。
  17. In this paper, some investigation and design as following. have been carried out on er - yb codoped phosphate glass waveguide laser first, three primary performance parameters of er - yb waveguide laser pump threshold power ; output power and slope efficiency have been commulated and analysed theoretically based on er ~ ( 3 + ) - yb ~ ( 3 + ) energy configuration ; rate equation of stable state and transmitting equation. the influences of er - yb ions concentration ; enabled waveguide length ; light dot radius of signal light and pump light ; reflectivity of output lens on three above parameters have been researched

    首先,從er ~ ( 3 + ) - yb ~ ( 3 + )能級結構出,結合光穩態速率方程與傳輸方程,對鉺鐿的三個主要性能參數:閾值功率、輸出功率、斜率效率作了理論計算分析,並研究了鉺、鐿離子濃度、光活長度、信號光與泵浦光光斑半徑比例、輸出耦合鏡反射率對這三個關鍵性能參數的影響。
  18. It can be used to fabricate display devices, high frequency filters, emitting diode, lasers and high - speed optical switch. therefore, it has great uses in both civil and military fields

    它可用與製作光顯示件、高頻濾光二極體、、高速光開關等件,在民用及軍事領域都有著重要的用途。
  19. The performance of the probe has an important effect on the performance of the biosensor. therefore, it is critical for advancing the detection sensitivity of the biosensor to design and optimize the structure of the probe to improve the excitation and collection efficiency

    光纖探針的性能對光纖生物傳感的整體性能有著極為重要的影響,如何設計並優化光纖探針結構以提高熒光信號的和收集效率,將成為提高光纖倏逝生物傳感探測靈敏度的關鍵。
  20. Ingaasp long - wavelength quantum well laser is at present appied most extensively in optical fiber communication. structuring its circuit model can optimize the design of the optical transmitter and it is significant to design high - qualitied optical communication system

    Ingaasp四元系長長量子阱是目前在高速光纖通信中應用最為廣泛的一類光源,構建其電路模型有助於完成光射機的優化設計,這對于高質量的光通信傳輸系統有非常重要的意義。
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