注入電壓 的英文怎麼說

中文拼音 [zhùrùdiànyā]
注入電壓 英文
injecting voltage
  • 注 : Ⅰ動詞1 （灌入） pour; irrigate 2 （集中） concentrate on; fix on; focus on 3 （用文字來解釋字句）...
  • 入 : Ⅰ動詞1 （進來或進去） enter 2 （參加） join; be admitted into; become a member of 3 （合乎） conf...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 壓 : 壓構詞成分。
  • 注入 : pour into; empty into; inpouring; injection; infusion [拉丁語]; infunde [法國]; abouchement; influxion
  • 電壓 : voltage; electric tension; electric voltage
  1. The work on the simulation of filter, which was applied to the oled to improve the characteristic of chromatics of emission, was introduced

    有機發光器件的載流子注入、傳輸、復合過程與器件本身的材料、結構、工作電壓密切相關。
  2. Secondly, according to the character of this kind of harmonic, the solutions of power filter are deeply analyzed and an optimized topology for series connected hybrid power filter is obtained. by pwm technique, midfrequency transformer and the principle of the magnetomotive force ( mmf ) compensation, the problem to the transfer of the low - frequency harmonic power compensatory signal in the series apf is solved, in technique

    其次，針對acem系統特有的「電源諧波」特性，深入分析了濾波器方案，得到了一種適用於acem系統諧波抑制的串聯混合型有源電力濾波器優化拓撲結構，並採用了pwm調制技術、中頻注入變壓器和磁勢補償原理有效地解決了串聯apf中低頻諧波功率補償信號傳輸的難題。
  3. A lot of experiments have been done in the process of exploiture soft packaging li - ion battery about how to choice the rational arts and crafts. the content include : how to deal with the collector, add how much pvdf in the material, how long the material need to stirring and the right viscidity, how much condubtivity agent the electrode need, what theckness is best, choice different collectors, the degree of dryness of the electrode, theckness of pressed model, how much electrolyte will be added, placement how long after added the electrolyte, system of formation how to influnce the battery, in formation the battery need or not need preesure from outside, how to vacuumize and the optimize matching positive pole and negative pole. with these practice make sure the parameter of the positive pole should less than 90 m ; according to different vacuumize order the conduc - tivity agent in anode will be 5mass % and 9mass %, respectively, and in cathode the data is 2mass % ; every 100mah added to 0. 4 ml electrolyte ; before formation the battery should be placement 8 hours and the system of formation must be less than 0. 01c before the voltage reach to 3. 0v ; should press in outside when battery in formation ; to these batteries which capacity more than 350mah the vacuum time not excess 15s ; the optimize matching positive pole and negative pole between 2. 10 : 1 and 2. 15 : 1. finally make out the battery which cycling performance and security are all very well

    液態軟包裝鋰離子電池的研究主要是對關鍵工藝進行了優化設計，具體包括:集流體的處理、 pvdf的加入量、漿料攪拌時間和粘度、導電劑的加入量、電極膜的厚度、不同集流體的選擇、電極膜的乾燥程度、壓型的厚度、電解液的加入量、注入電解液后靜置時間的長短、化成制度的影響、化成時電池所具有的壓力影響、抽真空的處理、正負極活性物質的匹配。最後確定出液態軟包裝鋰離子電池最佳工藝參數:正極膜的厚度小於90 m ;根據化成時不同抽真空順序，確定正極膜中的導電劑的加入量分別為5mass %和9mass % ;負極膜中導電劑的加入量為2mass % ;電解液的加入量為每100mah添加0 . 4ml ;化成前電池的靜置時間應當大於8h ;電池在3 . 0v之前採用小於0 . 01c的化成制度;在化成過程中應當施加一定的外部壓力;對於350mah的電池抽真空的延時不應大於15s ;而正負極活性物質的質量比應當在2 . 1 : 1 2 . 15 : 1之間。
  4. During the high - voltage device design, the thick epitaxial layer ldmos which is compatible with current technology was researched. this device used piecewise vld and multiple region structure f reduce field layer. the using of the f reduce field layer effectively reduce the surface electric field of the device, shorten the length of its drift region, enlarge the choice of range of the ion implant dose of the p layer, and effectively restrain the disadvantageously affection on the breakdown voltage of the interface charge qss

    在高壓器件研究中對與現有工藝相兼容厚外延ldmos進行研究，該結構採用分段變摻雜多區p ~ -降場層，有效降低器件的表面電場，縮短器件的漂移區長度，增大p ~ -降場層注入劑量的選擇范圍，並有效地抑制界面電荷qss對器件耐壓的不利影響。
  5. Account for the high electrical field induced from the high applied voltage relative to small dimension device, the mechanism of hot - carrier generation is analysed, the si - h bond broken model for hot - carrier injection and interface states generation is deduced and the substrate current model is developed

    基於mosfet偏壓不能按比例縮小所導致的高電場，對mosfet的熱載流子產生機理進行了分析，導出了熱載流子注入所引起的界面態的si - h健斷裂模型，並建立了表徵器件熱載流子效應的襯底電流模型。
  6. In order to study the influence of different process on the threshold voltage uniformity, gaas mesfets are fabricated both in recessed - gate process and planar selectively implanted process

    分別對採用隔離注入挖槽工藝和平面選擇離子注入自隔離工藝制備的gaasmesfet閾值電壓均勻性進行了比較研究。
  7. Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically

    在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。
  8. After constructing a 35 - nanometer - high channel between two silica plates and filling it with potassium chloride saltwater, they demonstrated that voltage applied across this nanofluidic transistor could switch potassium ion flow on and off

    他們在兩片硅板之間製作35奈米高的通道，注入氯化鉀溶液，示範在這個奈米流體晶體管上施加的電壓可開啟或阻斷鉀離子流。
  9. We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive, hysteresis, influence of sidegating effect on mesfet threshold voltage, influence of drain - source voltage on sidegating threshold voltage, influence of exchanging drain and source electrode on sidegating threshold voltage, relation between sidegating threshold voltage and the distance between side - gate and mesfet, relation between sidegating effect and floating gate, and so on

    本文還採用平面選擇離子注入隔離工藝，開展了旁柵效應的光敏特性、遲滯現象、旁柵效應對mesfet閾值電壓的影響、 mesfet漏源電壓對旁柵閾值電壓的影響、漏源交換對旁柵閾值電壓的影響、旁柵閾值電壓與旁柵距的關系、旁柵效應與浮柵的關系等研究。
  10. By high frequency injection method and a kind of magnetic anisotropy of pmsm, the rotor saliency position can be calculated in the pmsm sensorless vector control system

    摘要通過注入特定的高頻電壓信號，利用電機的各向異性以確定轉子的凸極位置，在同步電機無傳感器矢量控制中，對包括零速度在內的所有速度下都能獲得精確的轉子位置信息。
  11. In accord with the state standard about harmonic. the harmonic permission value of tangqian line is calculated. some measurement data are shown and analyzed, and some main conclusion is drawed that the 7th harmonic voltages of tangqian line is near to the permission value, total harmonic voltage distortion ratio has oversteped the permission value. the 3th harmonic, the 5th harmonic, the 7th harmonic and the 9th harmonic current from tangqian line all overstep the permission, the largest 5th harmonic current ratio in tangsc reaches 44 %, the 7th harmonic and the 9th harmonic current in tang7c and tangsc is large maybe because the harmonic current is magnified. this paper studies the model of each element in tang yin substation

    根據有關公用電網諧波的國家標準，計算出湯牽線注入湯陰變電站的諧波電流允許值，從實測數據可以得出一些重要結論：湯牽線7次諧波電壓含有率的最大值接近國標中的限值，湯牽線的諧波電壓總畸變率的最大值已超標；湯牽線注入電網的3 、 5 、 7 、 9次諧波電流都超標；湯6c電容器的5次諧波電流含有率較高，最高達到44 ；湯7c和湯8c電容摘要器的7次和9次諧波電流含有率偏高，原因可能是發生了諧波電流放大現象。
  12. The widely applications of nonlinear instruments have produced many high order harmonics, they are flowing into the power network and greatly influence the quality of electric power. and the frequency is n ' t constant but changed around 50hz

    電網中非線性設備的使用日益增多，所產生的高次諧波電流大量注入電力線路中，使得電網電壓、電流波形發生畸變，同時電網頻率並不是固定不變的，而是在50hz附近波動。
  13. A new viewpoint to observe the relation of bus voltage, bus current injection and branch current of the network considering branch mutual inductance has been provided in this paper. the process of building the z - matrix of a large - scale power network is set forth in particular in this paper. and the method is employed in the fault computation system successfully

    本文為了從演算法上提高故障計算的速度，在完全計及支路互感的前提下，利用節點注入電流與支路電流以及支路電流與節點電壓的關系，提出了一種能夠統一處理互感和無互感線路、快速形成大規模電網節點阻抗矩陣的新方法。
  14. Note : a maximum is specified that is the most - positive value of low - level input voltage for which operation of the logic element within specification limits is to be expected

    注：在限定的工作條件下，所規定的最大輸入電壓是極不容易保證邏輯單元所期望的低電平輸入電壓的最大正電壓值。
  15. Note : a minimum is specified that is the least positive value of high - level input voltage for which operation of the logic element within specification limits is to be expected

    注：在限定的工作條件下，規定的最小輸入電壓是極不容易保證邏輯單元所期望的高電平輸入電壓的最小正電壓值。
  16. Because the harmonics in tangyin substation are primarily from electric traction loads, this paper gives the structures of several main locomotive models and general harmonics they produce. the harmonics produced by electric locomotive have a characteristic that their range and phase are both dispersive. this paper also analyzes the impedance - matching balance transformer ' s structure and harmonics injected into the power system at its primary side, and sums up the characteristics of the harmonics from electric traction loads in the tangyin traction substation

    鑒于湯陰變電站的諧波主要來自電力牽引負荷，本文列舉了電力機車幾種主要車型的結構以及它們產生諧波的概況，得出了電力機車的各次諧波電流幅值和相角具有較大分散性的特點。針對湯陰牽引變電站的牽引變壓器，分析了阻抗匹配平衡變壓器的結構及其高壓側注入電網的諧波，推導了有關計算公式。通過理論分析並結合湯牽線的實測諧波數據，歸納了電力牽引負荷注入湯陰變電站的諧波的特點。
  17. This paper takes transformer loss as object function, discusses design of dynamic voltage restorer with series of injection transformer and presented a design method of minimum loss and optimal load loss

    摘要以變壓器損耗為目標函數，就動態電壓調節器串聯注入變壓器的設計進行了探討，提出了一種總損耗最小及負載損耗最優的設計方法。
  18. Dynamic induced current electrical impedance tomography ( iceit ) is one important branch of electrical impedance tomography ( eit ). the main difference between iceit and traditional eit is that iceit uses induced current to drive while traditional eit uses injected current, which can improve the current distribution of the inner part of the image area, and make the measured boundary voltage reveals more impedance information of the inner image area

    動態感應電流電阻抗斷層成像（ iceit ）是電阻抗斷層成像（ eit ）技術的一個重要的分支，它改傳統的eit以注入電流驅動為感應電流驅動，能顯著地改善成像區域內部的電流分佈狀況，使得測量所得的邊界電壓能反映更多的區域內部的信息。
  19. In this paper, several typical roics, roic noise and processing techniques are analyzed systematically in theory, and the computer simulated experiments are done. in the third chapter, many performances are analyzed on typical cmos roic theoretically in detail, such as the non - uniformity, injection efficiency, bias steadiness, frequency characteristic and threshold - voltage non - uniformity

    本文第三章首先對典型致冷型cmos讀出電路的非均勻性、注入效率、偏置穩定性、注入電流的頻率特性以及閾值電壓非均勻性等問題進行了較為全面的理論分析和計算機模擬實驗研究。
  20. With the broad application of the electrical and electronic technology in the industry branches and the power apparatuses, the number of non - linear loads is much more and more, and the capacity of them is biggish, so a mass of harmonic is injected into the power system, which produces the waves of voltage and current in power system to be aberrant seriously

    隨著電力電子技術在各工業部門和用電設備上的廣泛應用，非線性負荷數量越來越多，容量也越來越大，諧波大量注入電網，使電力系統電壓、電流波形發生嚴重的畸變。由於大多數儀器、儀表是針對工頻正弦波設計的，因而造成指示數據不正確。
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