淀積 的英文怎麼說

中文拼音 [diànjī]
淀積 英文
[化學] deposition; sedimentation; [地質學] illuviation
  • 淀 : Ⅰ動詞（沉澱） form sediment; settle; precipitateⅡ名詞（淺的湖泊, 多用於地名） shallow lake
  • 積 : Ⅰ動詞（積累） amass; store up; accumulate Ⅱ形容詞（長時間積累下來的） long standing; long pending...
  1. Al and its alloys adhere well to thermally grown and to deposited silicate glasses.

    鋁和它的合金能很好地粘附在熱生長的和淀積的硅酸鹽玻璃上。
  2. The higher value is comparable to those obtained in cvd epitaxy.

    這個高的數值可以和從化學氣相淀積外延得到的數值相比擬。
  3. The results indicate the stress of copper interconnects generates in the metallization and the thermal stress caused by thermal mismatch during the damascene process is the main stress. the thermal stress distribution in copper interconnects has been simulated by the finite element analysis software with the different trench structures

    對測量結果的分析得出金屬薄膜的淀積是造成銅互連線中應力的主要原因，熱應力在銅互連線應力中占較大比例，熱處理后銅互連線中應力減小。
  4. For vlsi, a plane surface may be approximated by depositing the interlevel dielectric by bias-sputter deposition (see section 9. 2. 4) or by using planarization.

    對于超大規模集成電路的平面狀表面，可以用偏置濺射淀積法的層間介質淀積（見924節）或用平面化工藝來近似獲得。
  5. Typical of the dopant chemistry is the reaction for arsine, which is depicted with the deposition process in fig. 9.

    砷化三氫的反應是典型的摻雜化學反應，圖9顯示了該反應的淀積過程。
  6. In contrast to the cvd process, mbe does not require the extensive safety precautions, although solid arsenic dopant must be handled carefully.

    和化學氣相淀積工藝相反，雖然在操作中對于固體砷還是必須非常小心掌握，但是，分子束外延不需要龐大的安定保險裝置。
  7. ( 3 ) the spatial analysis results showed that the variation of soil clay content was moderate at the direction of vertical section. the soil clay content was highest at the layer of 20 - 40cm, which showed that it is an eluvial accumulation horizon according to long - term cultivation, irrigation and rainfall

    （ 3 ）土壤粘粒含量在垂直方向上呈中等變異，整個土體在20 - 40cm土層處的粘粒含量最高，說明土壤表層由於長期耕作、灌溉降雨，土壤粘粒含量有一個淋溶淀積過程。
  8. Soil caco3 eluviation and deposition process is the most important development and evolution process of soil, from parent material to mature soil in the loess plateau, arid and semiarid area

    土壤碳酸鈣（ caco _ 3 ）的淋溶淀積過程是黃土高原以及乾旱和半乾旱地區土壤形成發育的主要過程之一，也是地球化學過程的主要內容。
  9. Soil caco3 eluviation - illuviation is a relatively complicate process, soil co2 is one of the important effect factors, which influences soil caco3 through controlling soil ph value and caco3 solution capability

    土壤碳酸鈣淋溶淀積是一個復雜的過程，土壤中的co _ 2通過控制土壤ph值和碳酸鈣的溶解性來影響土壤碳酸鈣的淀積，是重要的影響因子之一。
  10. The effect of deposition parameters on cdse target performances of fpc tube

    靶面淀積參數對攝像特性的影響
  11. They do not have an illuvial horizon enriched with either silicate clay or with an amorphous mixture of aluminum and organic carbon

    沒有富含硅酸鹽粘土或鋁有機碳非晶質混合物的淀積層。
  12. Caco3 not only affects soil physical and chemical characteristics but also causes co2 change in the air, because caco3 is main components among the total pool of inorganic carbon of soil. this paper systematically summarized and analyzed general development characteristics of soil profile caco3 in loess hill gully area including source, content, forming - condition, distribution and illuviation - depth of caco3, which will have the most important significance for the further studies on global soil and climate change

    碳酸鈣在土壤剖面中淀積的深度和類型是黃土高原土壤發育的重要標志，鈣積層是黃土高原土壤發育環境的歷史信息庫，同時土壤碳酸鈣作為土壤無機碳庫重要組成，它通過溶蝕后再結晶與大氣co _ 2之間進行物質交流來影響全球氣候變化。
  13. The safety problems are more severe for low-pressure depositions because the processes often use concentrated gases.

    對于低壓淀積來說安全性問題更為突出，因為這種工藝通常使用高濃度的氣體。
  14. A solvent for the material to be deposited is needed in lpe.

    在LPE法中，需要有待淀積材料的溶劑。
  15. Study on pulsed excimer laser deposited films

    脈沖準分子激光淀積薄膜的實驗研究
  16. They should remove the field plate and oxide and deposit a thin aluminum film over this region.

    他們應當去掉場極板和氧化層，並在整個區域淀積一層薄的鋁薄膜。
  17. For xrd, ellipsometry examinations, single - side - polished si ( lll ) wafers were used as substrates and for resistance measurement, glass was used and for infrared examination, double - side - polished si ( lll ) wafers were used and for ultraviolet - visible spectrophotometry, double - side - polished quartz wafers were used and for tem micrograph and electron diffraction pattern observation, cu nets deposited by formvar film were used. the cu - mgf2 cermet films were from 50 to 600nm thick

    用於xrd分析、橢偏測量的單拋si （ 111 ）晶片和電阻測試的載玻片上淀積膜厚約為600nm ；用於ir測試的雙拋si （ 111 ）晶片和uv測試的石英玻璃片上淀積膜厚約為250nm ；用於透射電鏡分析的樣品則淀積在400目銅網上的支撐formvar膜上，膜厚約為50 100nm 。
  18. Step edges that are parallel to the planet radius are coated symmetrically.

    與行星徑向平行的臺階邊緣被對稱淀積。
  19. The area and height of this deposition determine the ultimate ball size.

    該淀積層的面積和高度決定了球的最終尺寸。
  20. The reactors for this type of deposition are easily scaled to accommodate 125-or 150-mm wafers.

    這種淀積反應器很容易達到適應125或150mm的基片。
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