深度蝕刻 的英文怎麼說
中文拼音 [shēndùshíkè]
深度蝕刻
英文
deeetching-
The feasibility that kaufman ion source is applied in reactive ion beam etching is discussed. etching characteristics of materials, including pr, cr, quartz, are investigated. the etch rate and mechanisms of such materials are measured and analyzed as a function of ion energy, ion beam density and ion incidence angle in pure ar and chf3, respectively. the etch rate has shown a square root dependence on variation versus
深入研究了光刻膠、鉻薄膜、石英等光學材料離子束刻蝕特性，分別以ar氣和chf3為工作氣體，研究光刻膠、鉻薄膜、石英等的刻蝕速率隨離子能量，束流密度和離子入射角度的變化關系，得到刻蝕速率與影響因素的擬合方程，為掩模的製作工藝路線提供了實驗依據和理論指導。Many studies had attempted to characterize chemical weathering process by focusing on geochemisty of river particulate and sediment. the sediment geochemistry may reflect and compare with the carbonates and silicates weathering degree by introducing the chemical index of alteration ( cia ) and new sediment index of variation ( siv ) and elemental molar abundance ratio of the sediment. the one main objective of this study would provide and compare the relative weathering intensities of silicates and carbonates with the different basins
2沉積物地球化學與化學風化進程和機械剝蝕率化學風化指數與化學風化率屬于表徵化學風化作用意義不同的函數，前者為相對概念反映流域巖石在原巖基礎上己發生淋溶作用的深度，主要受到了氣候因子的深刻影響（中國流域沉積物化學風化指數由北到南呈有規則的遞增序列，氣候因子對風化進程的影響掩蓋了巖性的巨大差異） ，而化學風化率含義是指單位流域面積巖石風化淋溶產生的離子絕對總量。Temperature influence on etching rate of si deep trench using icp with sf6 o
刻蝕硅深槽基片溫度對刻蝕速率的影響Furthermore, the etching rate, roughness versus incident laser fluences and pulse number are investigated theoretically and experimentally in detail by 3d surface analyzer. then a new priciple of pmma etched by excimer laser is given : the process is the interaction result of photodecomposition,
隨后應用總結出的優化加工參數在該材料上刻蝕出了寬104 m ，深56 m ，矩形度高達80 % ，底面光滑的20個循環的pcr微流控晶元。Besides of those, the pattern of the target is novel after the long time ' s erosion. there is no erosion ring on its surface, so we can use this method to improve the utilization rate greatly
更重要的是：此時靶面被刻蝕的狀態比普通磁控濺射的要均勻得多，刻蝕深度值是從邊緣到中間逐漸增大的，在靶面並沒有出現通常的刻蝕環，因此這種磁控配置大大提高了靶的利用率。From the simulation of peb process, we prove that peb could reduce standing wave effects and improve resist development profile. after analyzing the effects of standing wave effects on resist profiles, we bring forward a certain thickness and these effects could be ignored when resist is beyond that value. finally, the characters of thick resist profile are analyzed, and experiment results are also given
同時，在論文中還深入討論了抗蝕劑折射率變化對光場計算帶來的誤差；模擬了后烘過程對駐波效應的改善作用，論證了採用適當的后烘工藝改善抗蝕劑光刻質量的作用；分析了駐波效應對厚層抗蝕劑顯影輪廓的影響，提出了一個可以忽略駐波效應影響的抗蝕劑厚度條件值；最後還模擬和分析了厚層抗蝕劑顯影輪廓特點並給出了實驗結果。The reciprocal space map of x - ray difll - action for quantum - wires is simulated successfully. abundant structural intbrmation such as array period, geometric shape, etching depth and strain state, etc. for quantum wires are obtained
模擬了量于線x射線衍射的二三維圖，得到更為豐富的樣品結構信息，例如周期，形狀，刻蝕深度，應變等。Through the analysis, it is shown that : 1, while fabricating the grating, the principle of selecting the parameters is : the period should be as large as possible, the etching depth should be small and filling factor should approach to 0. 25. 2, if selecting the parameter combine the selecting principle and the requirement of concrete application, the space of selecting the parameter should be larger than before. 3, while the period to. 4a, the surface profile has no effect on the reflectivity
通過分析發現： 1 、在製作有一定特性的光柵時，光柵參數的選擇原則為：周期的取值應盡量的大，刻蝕深度的取值應盡量的小，占空比的取值應盡量靠近f = 0 . 25 ； 2 、以參數的選擇原則結合製作的具體應用要求宋選擇光柵的參數，則各個參數的優化空間更大； 3 、當光柵的周期t 0 . 4時，表面面形對反射率沒有影響； 4 、運用臨界周期點隨折射率的變化規律，可以避免由於選擇光柵周期過大而出現一級衍射，從而導致製作失敗。The sense of this work is to gain a further understanding of helium in the two metals. on the diffusion of helium - 3 in two spherical shell samples made of 21 - 6 - 9 type of stainless steel, during the storage of tritium at the pressure of 6. 13mpa for about 4 and 6 years at room temperature and later exposed to air for another 3 and 1 year. first, a calculation based on the analytical and numerical method to the diffusion and decay theories was developed to evaluate the concentration distribution of helium - 3 by tritium diffusion and decay in the samples
在不銹鋼氚衰變~ 3he的擴散行為研究中，建立了氚和~ 3he濃度分佈的解析解和數值計算方法，以評估充氚不銹鋼球形容器壁中氚衰變~ 3he的宏觀濃度分佈，同時還用數值計算方法以求解氚和~ 3he的多步擴散行為；對樣品表面逐層蝕刻、同時收集釋放的~ 3he進行分析，分別實測了經室溫條件下在6 . 13mpa高壓氚中貯存4年和6年、空氣中存放3年和1年的兩種21 - 6 - 9不銹鋼球殼樣品內壁中~ 3he濃度分佈；結果表明：由於he在金屬中的不可容性， he原子偏聚于不銹鋼表面以及內部的局部區域，在整體趨勢上， ~ 3he分佈與計算結果相一致，根據理論計算，兩種21 - 6 - 9不銹鋼球殼樣品內壁中~ 3he到達的深度分別為350 m及500 m 。Otherwise, the thinner mask thickness or larger etching width is, the higher etching velocity and larger depth raise
比較小的掩膜厚度和大的刻蝕線寬都有利於刻蝕的速度和深度。分享友人