深施主能級 的英文怎麼說
中文拼音 [shēnshīzhǔnéngjí]
深施主能級
英文
deedonor level-
2 ) based on the study and analysis of many security architecture standards, the security region and the defense layer are introduced, the information category, the threatening level and the security protection level ( spl ) are put forward, the methods and requires of the security analysis are discussed in this paper. 3 ) based on the security architecture model and the security analysis, the graded requires of the security management and the security technology is presented, so the security design of the cissa and the choice of security produces can be done conveniently. 4 ) a cooperative communication platform is designed and implemented to ensure the dynamic and cooperative ability of above cissa model
針對計算機信息系統安全體系模型和實施標準的不足，本文緊密圍繞分層、分級、動態防禦以及協同通信平臺等關鍵技術開展研究工作，所做的工作主要集中在： 1 ）在深入研究了當前各種流行的安全體系模型基礎上，提出了用於指導計算機信息系統安全體系建設的動態縱深防禦安全體系模型； 2 ）在對各種安全體系標準進行研究與分析的基礎上，引入了安全域和安全防護層次的概念，提出了信息類別、威脅級別和安全保障級別的定義，闡述了進行計算機信息系統安全分析的方法和要求； 3 ）在安全體系模型和安全分析的基礎上，提出了安全管理及安全技術的分級要求，從而便於進行計算機信息系統的安全設計以及產品的選型； 4 ）設計並基本實現了用於保障上述安全體系動態協同能力的協同通信平臺。The main points of hlsip quality control includes : during the design stage, it is necessary to control the scheme comparison and optimum design, esp. the waterwork, electromechanical device and irrigation region planning, to improve the design quality and pay attention to control the long - term benefits of design results ; during construction period, the supervisor should help proprietor choose construction contractor, sign the construction contract, supervise the manufacture of equipment and strictly execute the quality control procedure to subject the construction to controlled mode ; in addition, the contractors must improve their quality self - control, maintain the notion " quality first " and insist the full process, multiway, and multi system control of construction quality
高揚程梯級提水灌溉工程質量控制的重點包括：設計階段控制好方案對比、設計優化，特別是水工建築、機電安裝、灌區規劃等多專業多目標的確定和協調，提高設計質量和深度，注重控制設計成果的長期效益；施工階段協助業主選擇好施工承包商，制定出嚴謹、完備的施工合同，搞好設備監造，嚴格執行質量控製程序，使工程施工時時處于受控狀態；同時要提高承包商的質量自控能力，堅持施工質量的全過程、多方法、多體系控制。Based on comparison of several technical schemes, the method of sand bedding pre - elevating and step water - filling pre - compressing is adopted. so the dissertation is consist of two parts : ( 1 ) the applicability study for the method of sand bedding pre - elevating and step water - filling pre - compressing, including numerical analyses for the thickness of sand bedding, the consolidation, settlement and stability of foundation, drainage, possibility of foundation liquefaction under seismic loading, et al. ( 2 ) monitoring at construction stage and checking the effect of foundation treatment, including the measurements of the settlement velocity and non - uniform settlement of ring beam under the tank, pore pressures and horizontal displacements in foundation, the pressure distribution at the bottom of oil tank and the strength increase of soils
通過多種技術方案比較，最終選擇了技術先進的砂墊層預抬高分級充水預壓法，論文工作主要由以下兩部分組成： （ 1 ）砂墊層預抬高分級充水預壓法的適用性研究，其中包括砂墊層厚度、地基沉降與固結度、地基穩定性、降水、地震作用下砂土液化的可能性等方面的計算分析； （ 2 ）施工監測與地基處理效果檢驗，其中包括油罐環梁基礎沉降速率與不均勻沉降程度、各分級充水加載階段地基超靜孔壓與深層水平位移、油罐底板壓力分佈及地基土強度增長等方面的實測與數據分析。This session of training of trainers and agribusiness management was aimed to gradually establish the training service system for sadp projects at sumu township level and to improve skills and methodology of trainers in implementing technical extension among herdsmen
此次培訓培訓者和農戶經營管理培訓的主要目的是：通過此類培訓活動，逐步建立起蘇木級農業可持續發展項目培訓服務體系，提高培訓者深入牧戶實施技術推廣的技能和方法。Deep donor level
深施主能級Substrate slices of uniform electrical properties are necessary for integrated circuit device fabrication. at present there are variations in electrical properties across substrate slices. these are associate with deep levels, in particular el2, which is generally attributed to antisite defect complexes and considered to be related to grown - in dislocations formed by thermal stresses
研究證明， si - gaas襯底電學特性的不均勻與材料中深能級微缺陷，特別是el _ 2 （深能級施主，被認為是as的反位缺陷的復合體）有極大的關系，而這些深能級微缺陷又與熱應力形成的長入位錯有密切聯系。The high density dislocations behave like deep - level donors and the dislocations scattering is considerable at low temperature especially. besides, when the insb buffer layer thickness became 80nm, the roughness of insb epilayer increased. the initial stage of insb growth on gaas substrate is
透射電子顯微鏡發現，在insb / gaas薄膜的界面處分佈有間距為3 . 5nm的失配位錯陣列，界面處的高密度位錯可體現出類似深能級施主的特性，尤其在低溫下對載流子散射更加顯著。分享友人