漂移特性 的英文怎麼說

中文拼音 [biāoyítèxìng]
漂移特性 英文
drift characteristic
  • 漂 : 漂動詞[方言] （事情、帳目等落空） fail; end in failure
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 特 : Ⅰ形容詞（特殊; 超出一般） particular; special; exceptional; unusual Ⅱ副詞1 （特別） especially; v...
  • 性 : Ⅰ名詞1 （性格） nature; character; disposition 2 （性能; 性質） property; quality 3 （性別） sex ...
  • 漂移 : 1 （漂流移動） be driven by the current; drift about2 [電子學] drift; shift; shifting; shunt runn...
  • 特性 : characteristic（s）; character; performance; features; properties; behaviour; response; character...
  1. Image coordinate and galvanometer pendular angle are kept in the computer according to the f9 field lens characteristic, enter pupil excursion and f6 characteristic error are ignored, that the image of laser scanning point move acceding to unlinearity relation is deduced theoretically. for deducing the distortion, error compensation is considered in the software

    像點坐標與振鏡擺角按f物鏡特性的線性關系存儲在計算機，在忽略了入瞳漂移和f特性誤差后，從理論上推導出二維垂直振鏡分佈中激光束掃描點的像點按照復雜的非線性關系運動，為了減少幾何畸變，在軟體設計中給出誤差補償。
  2. The effect on display characteristic made by thermal deformations of the shadow mask is comprehensively investigated. by using the electron beam distribution automatic measurement system with a micro - deflective coil, a concave spot in luminance distribution can be get. it changes its position when the shadow mask changes its form

    本文系統全面地分析了傳統蔭罩的各類熱變形對顯示屏特性的影響，利用本文研製的電子束亮度分佈自動測試系統，附加一個微偏轉磁場，使相鄰兩電子束打在同一顏色的熒光粉條，並形成一個亮度凹點，當蔭罩變形時，凹點位置作相應的位移，以此原理跟蹤測量凹點位移量，即可得到色純漂移動態變化曲線。
  3. The macro model of drift region resistance was established based on the solution of poisson ’ s equations and continuity equations. by the combination of spice mos ( level = 3 ) and the macro model, the complete dddmos model was then obtained, which accords well with simulated data. by simulating and comparing different devices of different process parameters, the model is applicable for different bias regions and can be useful in the power integrated circuit research in future

    首先介紹了器件建模的基本原理及相關模擬技術，然後利用工藝模擬軟體生成器件基本結構，並對其基本特性進行了分析;分析了業內和學術界比較通用的高壓器件建模的方法，隨后在模擬實驗的基礎上著重分析了dddmos的物理特性，在求解泊松方程、連續性方程等基本方程的基礎上，建立有物理意義的漂移區電阻的宏模型;隨后結合spicemos （ level = 3 ）模型而得到完整的dddmos模型，此模型與模擬數據符合得比較好，通過對不同工藝參數的器件進行模擬比較，該模型能夠覆蓋不同的工作偏壓范圍，具有較明確的物理意義，對今後的功率集成電路的研發有一定的參考意義。
  4. The marginal ocean basin ' s formation and evolution model may be as follows : early triassic, rift was formed by extension and splitting in india ( gondwana ) continental margin during it was drifting southward ; late triassic, the rift had been joined in the neo - tethys ocean in the east and converted into initial ocean basin, and ayila - zhongba micro - continental was formed in north of the rift

    洋盆的演化模式是：早三疊世，隨著印度（岡瓦納）大陸向南漂移，其北部邊緣因引張裂解產生裂谷，于晚三疊世向東開口與新特提斯洋主體連通，洋盆初具洋殼性質，北側形成阿依拉仲巴微陸塊。
  5. Silicon carbide is becoming the most promising semiconductor material for high temperature, high frequency and high power devices because of its superior properties such as wide band gap, high breakdown field, high electronics saturation drift velocity, and high thermal conductivity

    Sic材料由於具有寬禁帶、高臨界擊穿電場、高飽和電子漂移速度、較大的熱導率等優良特性，因此成為製作高溫、高頻、大功率器件的理想半導體材料。
  6. Featured by wide band gap, high breakage electric field, high electron mobility, low dielectric constant, strong irradiation proof and excellent chemical stability, silicon carbide ( sic ), viewed as one of the most promising wide band gap semiconductors, is widely utilized in optoelectronic devices, high frequency and large power, high temperature electronic devices

    被譽為最有潛力的寬禁帶半導體材料一sic ，因其具有禁帶寬度大、擊穿電場高、熱導率大、電子飽和漂移速度高、介電常數小、抗輻射能力強、良好的化學穩定性等優異的特性，被廣泛地應用於光電器件、高頻大功率、高溫電子器件。
  7. This work was supported by the state science and technology ministry of p. r. china under the contact no. g20000683 - 06, and by the national natural science foundation of p. r. china under grant no. 60046001. gallium nitride is one of the 3rd generation semiconductor materials. from 1990 ' s, gan has attracted more and more attention and advanced rapidly, mainly due to its direct transition, wide band gap ( ~ 3. 4ev ) and other excellent characters

    Gan是直接躍遷的寬帶隙材料，具有禁帶寬度大（ 3 . 4ev ，遠大於si的1 . 12ev ，也大於sic的3 . 0ev ） ，電子漂移飽和速度高，介電常數小，導熱性能好等特點，在光電子器件和電子器件領域有著廣泛的應用前景。
  8. In view of the regression characteristic and the configuration maintenance demand of the regional coverage satellite constellation, the constellation configuration is optimized using the linear relations between the semi - major axis and inclination and the rates of change of the ascending node right ascension and phase, which enhance the long - term stability of the satellite constellation configuration, simultaneously the sub - stellar and the phase are controlled through changing the deviations of the semi - major axis and the inclination

    摘要針對區域覆蓋衛星星座的回歸特性和構型維持需求，利用軌道半長軸和傾角與升交點赤經漂移和相位角漂移變化率之間的線性關系來優化星座構型參數，提高衛星星座構型的長期穩定性，同時通過協同控制軌道半長軸和傾角漂移量來實現區域覆蓋星座構型維持。
  9. Abstract : the attitude error performance of electrostatic gyro should be understood and the relevant error equations must be set up in order to ensure the navigation precision of esgm. the relation between the navigation errors and the attitude errors of gyro was derived by use of spherical triangle. the simulation results show that the temporal performances of the longitudinal and distance errors which come from the initial alignment errors are periodically variational. they also show that the longitudinal and distance errors resulted from gyro drifts are not convergent in time. thus, the effects of initial alignment errors and gyro drifts can not be neglected and must be estimated and compensated

    文摘:為了保證靜電監控器的導航定位精度，需要了解靜電陀螺的姿態誤差特性，建立相應的誤差方程.本文採用球面三角形原理推導了導航定位誤差與陀螺姿態誤差的關系式.模擬結果表明，由初始定向誤差引起的經度誤差和距離誤差的時間特性是周期變化的；由陀螺漂移引起的經度誤差和距離誤差是隨時間發散的.因此，初始定向誤差和陀螺漂移的影響不能忽略，必須對其進行估計和補償
  10. The effect of flexure support to the dtg precision is studied, and the drift equation of dtg is give

    研究了撓性支承特性對動力調諧速率陀螺儀精度的影響，推導了動力調諧速率陀螺儀的漂移公式。
  11. The basic principle, main properties, typical parameters, technical characteristics and general situation of klystron are introduced. the electron beam prebunching in the modulated cavity and shift tube of relativistic klystron amplifer ( rka ) is studied analytically, a self - consistent equation of radiation generated by the prebunched electron beam in the radiation cavity is derived using the field method of particle ? wave interaction instead of the electrical circuit method, and in terms of it, the gain in the linear regime calculated, a field analysis method is proposed. the theory analysis shows that the characteristic parameters, such as resonance frequency, real part of gap - impedance, external quality fadtor in all kinds of klystron output circuits including single - beam, multi - beam, single - gap, multi - gap, single - beammulti - gap, multi - beam multi - gap klystron output circuit, can be calculated by the field analysis method

    本文系統的介紹了速調管的工作原理、主要特點、發展概況、主要性能指標和技術特點，解析的研究了電子束在相對論速調管放大器的調制腔和漂移管中的預群聚;用粒子波互作用的場方法導出了在輻射腔中預群聚電子束產生輻射的自洽方程，同時對線性區的增益進行了計算。理論分析表明，場分析法可用於計算單注單間隙、多注多間隙、單注多間隙和多注多間隙速調管輸出迴路的諧振頻率、間隙阻抗實部和外觀品質因數等特性參數。
  12. Then the difference between the output of the trained neural networks and that of the actual system is used as a residual, which detects the sensor fault. the diagnosis can then be performed by further exploiting the information provided from the residual signals according to certain rules introduced in detail in the thesis. simulating results show that the method can isolate any fault of the sensors in any input types and normal work frequencies

    模擬結果表明，基於神經網路觀測器的故障診斷方法在系統正常工作頻率范圍之內，不受系統輸入類型和故障的類型的影響，只要故障對系統的特性發生影響（系統參數漂移3 ） ，通過神經網路觀測器的殘差判別函數可以診斷出故障。
  13. Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density

    基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大
  14. According to the characteristics of dynamic bottleneck in semiconductor wafer fabrication system ( swfs ), a dynamic bottleneck real - time dispatching ( dbrd ) strategy was proposed

    摘要針對半導體晶圓製造系統中瓶頸設備動態漂移的特性，提出一種動態瓶頸實時派工策略。
  15. According to the study on the resolution of the equipment for coal ore dressing based on the transmission of bi - energy - rays for a long time, it was provided that the resolution could be improved by selecting the mathem atical model, discerning mode, and the width of high and low energy windows

    摘要通過較長時間的實驗研究，指出處理數據的數學模型，判斷結果的識別模式，採集信號通道窗孔的設定是設備儀表系統關繫到設備分選率的幾個主要方面，只要綜合考慮源強，儀器的溫度漂移特性，適當選擇數學模型、識別模式和窗口位置及寬度，可以大大增強判斷的準確性，提高分選率。
  16. Application of wavelet ' s real - time filter in silicon micromachined gyroscope

    陀螺儀短時漂移特性實驗研究
  17. This paper were analyze the characteristic of the drift and discuss the compensation methods for it

    為了把ifog應用於慣性導航領域，必須改善其漂移特性。
  18. The paper studies the suppressing method of ifog " s drift and build arima models of ifog random drift to compensate random drift

    本文深入的研究了ifog的漂移特性，給出了隨機漂移的補償辦法。
  19. A comparison of the optical and mechanical performance is made between with iad and without iad. the optical performances include the refractive index the extinction coefficient the packing density the vaccum - to - air shift and the afm images of the surface ; the mechanical performances include the adhesion and the hardness

    光學特性涉及折射率、消光系數、波長漂移、聚集密度和表面粗糙度，機械特性涉及硬度和附著力。通過研究，發現離子輔助沉積對單層薄膜的光學特性和機械特性均有明顯改善。
  20. Several influence factors to result plasma drift in hainan were analyzed. in this paper the characteristics of ionospheric parameters variation were analyzed systematically and some new results in storm - time such as seasonal behaviors were obtained ; it is the first time to investigate the ionospheric drift behavior in hainan and some new results was obtained, the relationships between each two plasma drift velocity components in storm time in hainan were found and the electric filed variation in hainan ionosphere also was obtained ; the results also show that there are big differences of the ionosphere parameters bo and bl obtained from the data with that obtained from the iri - 2001 applied for hainan ; a new phenomena was found during a strong magnetic storm, that a layer with very strong electron density and density grad was found during the recovery phase of the storm, its horizontal scale is beyond 100km and temporal scale is about 2 hours, this phenomena repeated 3 times continuously. a type of negative disturbance in high and low latitude but positive disturbance in east - asia also has been found

    本文較為系統地給出了海南地區電離層的參數變化特徵，特別是得到了一些暴時與以往不同的季節特性；第一次給出了海南地區的電離層等離子體漂移特徵，發現等離子體漂移暴時擾動在三個方向上有內在的聯系，得到了電場變化曲線；研究結果還表明海南電離層的半厚指數和形狀參數等與國際參考電離層iri - 2001存在很大差別；通過對強磁擾動事件期間的參數變化特性分析發現，在磁暴恢復相期間海南地區電離層底部存在一個電子密度非常大的高密度區，高密度區底部電子密度梯度隨高度急劇增加，該區域的水平尺度可達100公里以上時間尺度約為2小時，連續出現過三次，這是一個在海南從來未發現的新現象；研究還發現了暴時東亞地區電離層擾動會出現高低緯負相而中緯正相的現象。
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