漂移率 的英文怎麼說
中文拼音 [biāoyílǜ]
漂移率
英文
drift mobility-
The limited sensitivity of present pulsar surveys and the greater frequency drift make the more distant pulsars difficult to observe.
目前脈沖星普查的有限探測靈敏度和大的頻率漂移，使我們難以觀測到更遙遠的脈沖星。Automatic frequency drift rejector
自動頻率漂移抑制器Because of the temperature rising of ultrasonic motors, load changes, and vicinal surrounding changes and so on, the resonant frequency will shift, leading to working stability drop
由於超聲波電機的溫升、負載變化及周圍環境變化等原因，使電機的諧振頻率發生漂移，這將影響超聲波電機運行的穩定性。The second one : we studied the effect of temperature on performance of lds. it was found that threshold current increase exponentially outpower and slope efficiency decrease parabola and exponentially respectively. coefficient of temperature shift is 0. 24 / k, wheras characteristic temperature also decrease with rise of temperature
研究了溫度對激光器各參數的影響，隨著溫度的增加，閾值電流呈指數增加，輸出功率和斜率效率分別呈拋物線和指數關系遞減，同時特徵溫度也減少，波長隨溫度的漂移系數為0 . 24nm ，並且總結了一些溫度和結構設計方面的關系。8b / 10b encoding adapt the characteristic of fiber channel very well, it has been used in high - speed fiber transmission broadly. it avoids the appearance of continuous “ 1 ”, “ 0 ”, offers plenty of bit synchronization time information, enhances the stability of output light signal, reduces interference between signals and offers proper redundancy to check error through transmission
它避免了連「 1 」 、連「 0 」碼的出現，提供了豐富的位同步定時信息，減少了直流基線漂移，提高了光輸出功率的穩定性，減少了高低頻分量，改善了信號間的串擾，提供了適當的冗餘，便於檢測系統傳輸中帶來的錯誤。Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices
3c - sic被譽為最有潛力的寬禁帶半導體材料，具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點，是高溫、高頻、高功率半導體器件的首選材料。The macro model of drift region resistance was established based on the solution of poisson ’ s equations and continuity equations. by the combination of spice mos ( level = 3 ) and the macro model, the complete dddmos model was then obtained, which accords well with simulated data. by simulating and comparing different devices of different process parameters, the model is applicable for different bias regions and can be useful in the power integrated circuit research in future
首先介紹了器件建模的基本原理及相關模擬技術，然後利用工藝模擬軟體生成器件基本結構，並對其基本特性進行了分析;分析了業內和學術界比較通用的高壓器件建模的方法，隨后在模擬實驗的基礎上著重分析了dddmos的物理特性，在求解泊松方程、連續性方程等基本方程的基礎上，建立有物理意義的漂移區電阻的宏模型;隨后結合spicemos （ level = 3 ）模型而得到完整的dddmos模型，此模型與模擬數據符合得比較好，通過對不同工藝參數的器件進行模擬比較，該模型能夠覆蓋不同的工作偏壓范圍，具有較明確的物理意義，對今後的功率集成電路的研發有一定的參考意義。This paper introduces a power controlling system for electrosurgical generator based on thyristor, and proposes a power compensating method to maintain the output power invariable when the ac voltage fluctuates
介紹了基於可控硅整流電路的高頻電刀控制系統，並針對該類型電刀的輸出功率隨電網電壓波動而發生漂移的問題，採用了一種功率補償的方法，實現輸出功率在不同的電網電壓的波動下保持恆定。This paper introduces a power controlling system for electrosurgical generator baaed on thyristor, and proposes a power compensating method to maintain the output power invariable when the ac voltage fluctuates
摘要介紹了基於可控硅整流電路的高頻電刀控制系統，並針對該類型電刀的輸出功率隨電網電壓波動而發生漂移的問題，採用了一種功率補償的方法，實現輸出功率在不同的電網電壓的波動下保持恆定。The over - current relay works to protect oscillation tubes and rectifier, when the current exceeds its limits. frequency deviation caused by faulty operation is also prevented
當電流超過限制值時，過負荷電流繼電器自動保護振蕩管和整流器，同時可以避免由不當操作所引起的頻率漂移。Drift rates will depend upon both the strain level and the temperature.
漂移速率既依賴于應力的大小，又依賴于溫度。Secondly, basic model of one - stage investment decision is provided and the effects of the parameters, including the capacity step, time step etc on the simulation are understood at the same time, the algorithm ( monte carlo method ) of basic model is given and the basic model is studied in order to find how the three parameters of demand affect the investment decisions
其次，在一系列假設的基礎上，提出了單階段投資決策的基本模型，分析了規模步長、時間步長、樣本數量等參數對模擬結果的影響，給出了該模型的蒙特卡洛模擬演算法，並對該模型進行了系統研究，明確了需求的3個參數（需求漂移率、需求的波動率和初始需求）如何對投資決策結果產生影響。The static drift error and dynamic test error of liquid floated reactive rate gyro are analyzed also
分析了液浮力反饋速率陀螺的靜態漂移誤差和動態測量誤差。Algan / gan hemt has high breakdown electric field, fast electron drift velocity and large electron concentration, so it has been used more and more in high frequency and large power fields
Algan / ganhemt由於具有擊穿電壓高、電子漂移速度快和電子濃度大等特點，已被越來越多地應用於高頻及大功率領域。Silicon carbide is becoming the most promising semiconductor material for high temperature, high frequency and high power devices because of its superior properties such as wide band gap, high breakdown field, high electronics saturation drift velocity, and high thermal conductivity
Sic材料由於具有寬禁帶、高臨界擊穿電場、高飽和電子漂移速度、較大的熱導率等優良特性，因此成為製作高溫、高頻、大功率器件的理想半導體材料。Featured by wide band gap, high breakage electric field, high electron mobility, low dielectric constant, strong irradiation proof and excellent chemical stability, silicon carbide ( sic ), viewed as one of the most promising wide band gap semiconductors, is widely utilized in optoelectronic devices, high frequency and large power, high temperature electronic devices
被譽為最有潛力的寬禁帶半導體材料一sic ，因其具有禁帶寬度大、擊穿電場高、熱導率大、電子飽和漂移速度高、介電常數小、抗輻射能力強、良好的化學穩定性等優異的特性，被廣泛地應用於光電器件、高頻大功率、高溫電子器件。As the only one among nearly 200 polytypes of different crystalline sic, which has a cubic crystalline structure, p - sic is an excellent candidate for fabrication of high power devices because of its high values of saturated electron drift velocity and electron mobility in comparison with the other sic polytypes
碳化硅是碳化硅近200種不同結晶形態中唯一的純立方結構晶體，載流子遷移率高，電子飽和漂移速度大，更適合於製造電子器件特別是電力電子器件之用。This theoretic model employs the basic idea of correlation measurement, achieve the density wave speed by the correlation of the signals of upper and lower sensors, and get the total flow rate and water cut through the theoretic relationship of density wave speed and total flow rate as well as holdup with the help of drift flux model so as to accomplish the oil / water two - phase flow measurement at last, using the limited available experiment data, the theoretic model has been simplified into an applicable linear alternative which is suitable to homogeneous oil / water two - phase flow measurement to accomplish the oil / water two - phase flow measurement using the density wave phenomena is of highly theoretically valuable for density wave theory research as well as oilavater two - phase flow measurement research. to develop new type oil / water two - phase flow instrumentation based on this theoretic measurement method will be very applicable and promising
在此基礎上，針對穩態密度波理論提出了基於密度波理論的油水兩相流測量理論模型，該模型以密度波傳播理論作為基礎，通過上下游傳感器信號相關獲得密度波傳播速度，利用密度波傳播速度與總流量以及持相率的理論關系結合漂移模型來求解總流量和含相率，實現油水兩相流的測量，在理論分析的基礎上，在實驗資料有限的條件下，對基於密度波理論的油水兩相流測量理論模型作了極限的簡化，提出了本文油水兩相流測量理論方法應用在測量均勻油水兩相流中的實用線性模型。From some characteristics observed, such as the short lift time, narrow frequency band, fast frequency drift, quasi - periodic pulsation, spike event and complex magnetic structure, it is considered that the radiation mechanism of these events may be principally due to the electromagnetic waves magnified directly by the instable electronic cyclotron
從它們的觀測特徵：短壽命，窄頻帶，頻率快速漂移，及尖峰事件與磁結構復雜的大黑子活動區密切相關等，認為這些事件的輻射機制可能是電子迴旋脈澤不穩定直接放大電磁波所致。Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically
在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。分享友人