漂移電子 的英文怎麼說

中文拼音 [biāoyídiànzi]
漂移電子 英文
wandering electron
  • 漂 : 漂動詞[方言] （事情、帳目等落空） fail; end in failure
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 漂移 : 1 （漂流移動） be driven by the current; drift about2 [電子學] drift; shift; shifting; shunt runn...
  • 電子 : [物理學] [電學] electron
  1. Compared with traditional mechanical and optic gyros, hrg has such advantages as no high speed circumvolving or moving parts in structure, no warm - up time and short start - up time, wide signal band in frequency, low excursion noises, great endurance in over loading, nuclear radiation and short time power off, small bulk, light weight, low power cost and long life, which is suitable for space applications

    與傳統的機械陀螺和光學陀螺相比，半球諧振陀螺具有如下優勢:結構上無高速轉子、無活動部件;不需預熱，啟動時間短;信號頻帶寬，漂移噪聲低;能承受大的機動過載;抗核輻射，並可經受短時間電源中斷的影響;體積小，重量輕，功耗低，壽命長，非常適合空間應用。
  2. Elastic collision and inelastic collision are considered in oxygen molecule, nitrogen molecule by electron impart. the mail simulation results were as follow : ( 1 ) the variations of drift velocity and the average energy of electron with the e / n in o2 and n2 are obtained. the number of electrons for excitation, ionization, dissociation and dissociative ionization collision with the e / n and the energy of electron are analyzed emphatically

    考慮了各種彈性和非彈性碰撞過程，在純氧氣、純氮氣中，給出了不同簡化場e n條件下的電子漂移速度和平均電子能量的變化；著重分析了激發、電離、分解及分解電離碰撞的粒子數隨e n 、電子能量的變化，同時計算了激發發射光譜的波長。
  3. Part 2 analyses beam landing shifts made by thermal deformations of a shadow mask and vibration of a new type of shadow mask - aperture grille. an automatic measurement system for cpt decolorization and a vibration measurement system for aperture grille are established. part 3 analyses the difference of perception and discrimination to color between the human eyes and ccd system, and develops a new method based on ccd technology to evaluate the screen white - balance

    主要內容分為三部分： （ 1 ）分析著屏電子束分佈與電子槍、偏轉系統及蔭罩之間的關系，研製自動測試裝置，為設計和改進相關結構提供依據； （ 2 ）分析蔭罩熱變形和振動對顯示屏色純度影響，建立了色純漂移自動測試裝置和張緊式蔭罩振動測試系統； （ 3 ）分析了人眼與ccd對彩色刺激的不同響應，建立了基於ccd的顯示器全屏色純均勻性測試方法。
  4. The effect on display characteristic made by thermal deformations of the shadow mask is comprehensively investigated. by using the electron beam distribution automatic measurement system with a micro - deflective coil, a concave spot in luminance distribution can be get. it changes its position when the shadow mask changes its form

    本文系統全面地分析了傳統蔭罩的各類熱變形對顯示屏特性的影響，利用本文研製的電子束亮度分佈自動測試系統，附加一個微偏轉磁場，使相鄰兩電子束打在同一顏色的熒光粉條，並形成一個亮度凹點，當蔭罩變形時，凹點位置作相應的位移，以此原理跟蹤測量凹點位移量，即可得到色純漂移動態變化曲線。
  5. The hybrid density functional theory at ab initio level was applied to study solvent effects on geometrical structures, charge distribution, and solvatochromic shifts of 4 - nitro - buta - 1, 3 - dienylamine molecule

    摘要在從頭計算的水平上，利用雜化密度泛函理論研究了溶劑對4 -硝基1 ， 3 -丁二烯基胺分子的幾何結構、分子內的電荷分佈和電荷轉移態的能量漂移的影響。
  6. Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices

    3c - sic被譽為最有潛力的寬禁帶半導體材料，具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點，是高溫、高頻、高功率半導體器件的首選材料。
  7. The improved voltage model of rotor flux is proposed in the paper. it eliminates the influence to actual system function in the voltage model of rotor flux for the proper drift problem and cumulative error of pure integral calculus tache

    提出了改進的電壓型轉子磁鏈估算模型，消除了電壓型轉子磁鏈估算模型中純積分環節所固有的漂移問題和積累誤差對實際系統性能的影響。
  8. In theoretical analysis, the motion of radially - emitted electron beam in diode region and drift region has been analyzed, and the relation between radial momentum or current of electron beam and the guiding magnetic field has also been studied, then the possibility to optimize the guiding magnetic field has been derived. the motion of radially - emitted beam electrons in smooth bore magnetron and smooth bore milo has also been studied theoretically. at last, the motion of radially - emitted beam electrons in compound axial and azimuthal magnetic field has been studied

    在理論分析中，初步分析了軸向發射條件下電子在二極體區域和漂移區的運動規律，電子徑向動量隨著外加磁場變化的規律，以及電子束電流隨著外加磁場的變化規律，還有二極體區域磁場優化的可能性;分別研究了有軸向磁場時以及有角向磁場時徑向發射的電子在光滑陽極結構中的運動規律，最後分析了在軸向和角向復合磁場中電子的運動規律。
  9. Cosmic ray test was carried out to choose and optimize working parameters of full - length prototype and its data acquisition system, verify the electronics system about dynamic range, drift time measurement search window, charge measurement integral width, work stability and electronics grounding and noise. in experiment, acquired abundant experience with the solution of actual problem and verified their reliability of physical design. this lays the foundations for the successful construction of the besiii drift chamber and electrical system

    測試過程中我們調整了電子學的動態范圍、漂移時間和電荷測量參數驗證了電子學系統工作的穩定性、抗干擾能力及噪聲水平等並成功解決了實驗過程中遇到了問題。通過長時間的取數進一步檢驗了全長模型和電子學系統工作穩定性，驗證了全長模型及其數據獲取系統物理設計的可靠性，為漂移室和電子學系統的成功研製奠定了基礎。
  10. And we consider sufficiently all kinds of factors, such as conductance of tube, leak and deflate of system, pump speed, ionization and re - ionization of high - energy ion taking place in the process of transmission. furthermore, we take two ways to discuss pressure distribution of cell

    在系統軸線上壓力分佈分析過程中，綜合考慮了管道的流導、系統的漏氣和放氣、泵的抽速、高能離子在管道內漂移過程中發生的電離和再電離等因素的影響。
  11. In addition to pic method, the numerical computation method is used as a compensation for the study of the characteristics of electron beam. the two methods are used separately to attain the trajectory of axially - emitted electron beam in diode region and drift region, and the trajectory of radially - emitted electron beam with axial, azimuthal, as well as compounded axial and azimuthal magnetic field. three two - dimensional codes and two three - dimensional codes have been made out to compute the trajectories

    本文特點之一就是採用粒子模擬和數值計算相結合的方法進行模擬計算，分別得到了軸向發射條件下電子在二極體區域和漂移區的軌跡，徑向發射條件下電子在角向磁場、軸向磁場、角向和軸向復合磁場中電子的運動軌跡，分別編制了三個二維電子軌跡計算程序和兩個三維電子軌跡計算程序，最後將粒子模擬和數值計算得到的結果進行了對比，得到了較為滿意的結果。
  12. Investigation of plasma drift velocity vs time in intense electron beam diode

    強流脈沖電子束二極體等離子體漂移速度的研究
  13. The results show that the electron mean drift velocity is affected by the cathode radius, the impedance of the load diode, the inner radius of vanes and the input voltage

    結果表明電子平均漂移速度決定於陰極桿半徑、負載二極體阻抗、陽極慢波葉片內徑和輸入電壓。
  14. Algan / gan hemt has high breakdown electric field, fast electron drift velocity and large electron concentration, so it has been used more and more in high frequency and large power fields

    Algan / ganhemt由於具有擊穿電壓高、電子漂移速度快和電子濃度大等特點，已被越來越多地應用於高頻及大功率領域。
  15. Silicon carbide is becoming the most promising semiconductor material for high temperature, high frequency and high power devices because of its superior properties such as wide band gap, high breakdown field, high electronics saturation drift velocity, and high thermal conductivity

    Sic材料由於具有寬禁帶、高臨界擊穿電場、高飽和電子漂移速度、較大的熱導率等優良特性，因此成為製作高溫、高頻、大功率器件的理想半導體材料。
  16. Featured by wide band gap, high breakage electric field, high electron mobility, low dielectric constant, strong irradiation proof and excellent chemical stability, silicon carbide ( sic ), viewed as one of the most promising wide band gap semiconductors, is widely utilized in optoelectronic devices, high frequency and large power, high temperature electronic devices

    被譽為最有潛力的寬禁帶半導體材料一sic ，因其具有禁帶寬度大、擊穿電場高、熱導率大、電子飽和漂移速度高、介電常數小、抗輻射能力強、良好的化學穩定性等優異的特性，被廣泛地應用於光電器件、高頻大功率、高溫電子器件。
  17. ( 2 ) the process of dc discharge in o2 / n2 mixtures with the different n2 concentration has been simulated. the dependences of number of collisions with the e / n and the energy of electron are given. it is analyzed stressfully that the process of electron - molecule collision with the e / n and the energy of electron in air at atmospheric pressure

    對于o _ 2 n _ 2混合氣體，模擬了不同配比條件下直流放電過程，得出了發生碰撞的粒子數隨e n 、電子能量的變化；著重分析了空氣中激發、電離、分解及分解電離碰撞的粒子數隨e n的變化，給出了電子漂移速度和平均電子能量隨e n的變化。
  18. As the only one among nearly 200 polytypes of different crystalline sic, which has a cubic crystalline structure, p - sic is an excellent candidate for fabrication of high power devices because of its high values of saturated electron drift velocity and electron mobility in comparison with the other sic polytypes

    碳化硅是碳化硅近200種不同結晶形態中唯一的純立方結構晶體，載流子遷移率高，電子飽和漂移速度大，更適合於製造電子器件特別是電力電子器件之用。
  19. Pic simulations are performed to determine gap scaling in a high density pegs. comparisons of simulation results with simply theory results and experiment results, indicate that the pegs gap is always equal to the critical gap for magnetic insulted electron flow. it is important to note that, the vacuum electron flow to the anode causes current loss and the

    另外，根據模擬結果還得到了兩個重要結論：電流損失是由真空漂移電子的出現所造成的，電流損失的大小與負載阻抗成近似正比關系；負載阻抗等於peos的流阻抗時，負載獲得功率最大。
  20. Graded doping is adopted in both sides of the junction ( double graded doping ). this results in a strong ( drift ) electric field throughout the whole active layer. this field will accumulate minority carriers effectively and the whole internal quantum efficiency is increased

    漂移場的形成是通過mbe技術，在結的兩側都採用梯度摻雜（即雙梯度摻雜） ，從而在整個有源層都建立起一個強的（漂移）電場，有效地利用載流子在電場作用下的漂移作用收集少數載流子，使得總內量子效率得以提高。
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