漏失電流 的英文怎麼說

中文拼音 [lóushīdiànliú]
漏失電流 英文
leakage current
  • : Ⅰ動詞1 (從孔或縫中滴下、透出或掉出) leak; drip 2 (泄漏) divulge; disclose; leak 3 (遺漏) le...
  • : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
  • : Ⅰ動1 (液體移動; 流動) flow 2 (移動不定) drift; move; wander 3 (流傳; 傳播) spread 4 (向壞...
  • 電流 : current; galvanic current; electric current; electricity; current flow電流保護裝置 current protec...
  1. The second chapter simply introduces the development of alternate asynchronous inverter technology and retrospects some types of energy - saving systems for hydraulic elevators. then the working principles of the project are discussed and analyzed at four different working status, i. e. light load upwards, heavy load upwards, light load downwards and heavy load downwards. and the chapter focus on the introduction of structure design of pump station, calculation and type selection of pump / motor reversible units, research on oil leakage principles of accumulator circuit, design of accumulator - pump / motor pressure - energy transformer and integrated valve blocks, etc. the last but not the least, the electrical wiring of vector inverter control cabin and design of computer control and data acquisition system are introduced

    論文第二章首先簡單介紹了交異步動機變頻調速技術的發展概況,在回顧梯液壓控制系統節能技術的基礎上,介紹了本課題研製的「採用蓄能器的液壓梯變頻節能控制系統研究」的基本原理,分析了動力系統在梯轎廂輕載上下行、重載上下行等四種典型工況下的基本工作狀態和工作方式;詳細地介紹了本課題節能系統液壓動力泵站的結構設計和參數設計,重點研究了液壓動力泵站的結構設計、液壓泵馬達可逆性問題及其選型設計計算、蓄能器迴路泄油損機理的研究及其補償裝置的設計、蓄能器-泵馬達壓力能量轉換裝置的設計、多功能集成控制閥組的設計等內容;最後簡單介紹了本課題矢量控制變頻控制櫃的外部附件氣接線、計算機控制及數據採集系統的硬體設計等內容。
  2. Once data has been written in dram, charges stored in each capacitor must maintain more than the refresh time so that the information stored in each dram cell can be read out correctly

    數據一旦被寫進dram ,每個小容上荷的存儲時間就必須大於dram的刷新脈沖時間,如果由於致使存儲的荷丟,就會導致數據讀取的誤操作。
  3. According to the academic analysis of insulation, this paper expatiates the examination ways of electric power insulates, such as shaking - watch, the direct current withstand voltage and measure leakage current, alternating current withstand voltage, measure dielectric loss angle, on - line inspections etc., to be used to direct the installations and debugging of electrical engineering

    通過絕緣介質的理論分析,闡述了氣設備絕緣檢查通常的搖表檢查,直耐壓及的測量,交工頻耐壓,介質損角的測量,在線檢測等方法,以用來指導氣工程施工的安裝和調試。
  4. In the third chapter, the mathematical models of project system have been established, and simulation has been done on the simulink enviroment of matlab software kits. the simulation focus on the effects of main parameters on the dynamic characteristics of speed control system, and the main parameters include viscosity damp coefficient and friction torque of electrical motor shaft, internal leakage coefficient of pump / motor of hydraulic circuits, gas volume of pressure accumulator, viscosity damp coefficient of cylinder piston and different running building floors, etc. at last, theoretical research effects of the flow and pressure pulsation of pump / motor on car speed and oil volume leakage theory are discussed. the fourth chapter of this thesis concerns the research on the key items about hydraulic power control system according to the ens 1 - 2 and other hydraulic elevator standards

    論文第三章針對組成系統的各個模塊進行了機理建模,並且通過matlab軟體中的simulink圖形化模擬環境進行了本課題系統的模擬研究,主要針對影響系統特性的主要參數變化,動態分析系統的輸出特性,在上下行工況中,分析了機軸系粘性阻尼系數、軸系摩擦力矩、主迴路蓄能器迴路液壓泵馬達內泄系數、蓄能器氣體容積、液壓缸柱塞粘性阻尼摩擦系數以及不同運行樓層工況等參數對系統特性的影響;最後對軸向柱塞泵馬達的量壓力脈動對梯轎廂速度的影響和蓄能器內油液體積損機理進行了理論研究。
  5. Fire hazard testing - part 5 - 3 : corrosion damage effects of fire effluent ; leakage - current and metal - loss test method

    著火危險試驗.第5 - 3部分:燃燒廢氣的腐蝕破壞效應.和金屬損試驗方法
  6. During the fabrication or service, if the applied tensile stresses exceed the probabilistic tensile strength of silicon, then failure will occur. even a tiny crack will bring tremendous damage to devices and circuits. especially nowadays, with the increasing of silicon wafer diameter, warpage in heat treatment, defects and dislocations generated in silicon often become critical problems in ulsi devices fabrication

    特別在大規模集成路與器件生產中,一個微小的裂紋就可能導致后道工序中路與器件的完全損壞;而且在熱處理過程引起的翹曲,使光刻精度下降;在矽片內部產生的氧沉澱及位錯等缺陷,會導致集成路或器件的增加,使器件效。
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