漏柵電容 的英文怎麼說
中文拼音 [lóuzhàdiànróng]
漏柵電容
英文
drain gate capacitance-
It is shown that neglecting the gate - drain capacitance of the mosfet would lead to an overestimation of the optimum device width in the cmos source degenerated lna
本文證明了在cmos源端degeneration結構的低噪聲放大器中，忽略場效應管的柵漏電容將造成對放大管的最優柵寬估計過大。It is believed that p - si tft will be the main type in the future panel display. among the process of manufacture p - si tft, the source and drain will have the superposition with grid for the reason of machine ’ s alignment error. the superposition will bring superposition capacitance and it will badly cut down the electric performance
在制備多晶硅tft時，由於機器的套準誤差會在柵極與源、漏極之間產生重疊部分，這樣就造成了柵源、柵漏之間的交疊電容，交疊電容的存在嚴重影響了多晶硅tft的性能，而利用自對準工藝制備的多晶硅tft則避免了交疊電容的產生。The lna with source inductor degeneration is analyzed in detail, which is used most widely in current. base on the analysis, a cascode structure is presented to minimize the effect of gate - drain capacitance cgd
針對目前lna中應用最廣泛的源極電感負反饋結構，進行了詳細分析，在此基礎上對該結構做出了優化，採用共源共柵級聯結構，減小了柵漏電容cgd的影響。Finally the method of preparation of p - si tft and some useful dates were given. the dissertation includes seven chapters. the first chapter introduces the development of tft ; the second chapter introduces the principle of tft and its structure ; the third chapter provides the reason of superposition capacitance between s, d and gate ; the fourth chapter introduce the deposition and test method of sinx ; the fifth chapter introduces the fabrication of p - si ; the sixth chapter studies the fabrication techniques of p - si tft and some parameters ; the seventh chapter is a conclusion of the research
本文一共分為七章:第一章介紹了本論文的研究背景、研究意義、主要工作以及國內外的研究進展;第二章介紹了tft的結構和工作原理;第三章介紹了柵極與源、漏極之間疊加電容產生的原因和自對準工藝;第四章介紹了氮化硅的制備方法和測試方法;第五章介紹了多晶硅tft有源層的制備方法並對各種晶化機理做了介紹;第六章主要對利用自對準工藝制備tft的工藝進行研究，並對制備出來的樣品進行了測試;第七章對全文進行總結。During the course of modeling ldmos, the paper puts forward the method in which maxwell function in the static system is applied in analysis compute of ldmos threshold voltage. schwarz - chritoffel transformation method is used to solve the gate self - capacitance with limited size. at the same time, it also provides the method which computes the drain and source self - capacitance by conformal transformation and the equivalent - voltage sharing - charge model
在對ldmos的建模過程中，本文提出了將靜電系統中麥克斯韋方程用於ldmos閾值電壓的分析計算的方法，引入了許瓦茲-克利斯多菲變換來求解了有限尺寸的柵自電容，並提出了用保角變換和等電壓電荷共享模型來計算漏與源的自電容的方法。分享友人