漏極電流 的英文怎麼說

中文拼音 [lóujídiànliú]
漏極電流 英文
drain current
  • 漏 : Ⅰ動詞1 （從孔或縫中滴下、透出或掉出） leak; drip 2 （泄漏） divulge; disclose; leak 3 （遺漏） le...
  • 極 : i 名詞1 （頂點; 盡頭） the utmost point; extreme 2 （地球的南北兩端; 磁體的兩端; 電源或電器上電流...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 電流 : current; galvanic current; electric current; electricity; current flow電流保護裝置 current protec...
  1. Leakage current measurement is able to detect polarity of capacitor

    漏電流量測方式可輔助檢測電容極性達
  2. Standard test method for measuring transistor and diode leakage currents

    晶體管及二極體泄漏電流測量的標準試驗方法
  3. We have designed different measurement instruments according to the methods. the instrument used to measure electrode is a high precision multi - channel system constructed with a iaadc as the core and high input impedance amplifier and low input current multiplexer

    對于硫屬玻璃電極，我們設計了以高精度的adc為核心，配以高輸入阻抗低噪聲的前置放大器和低漏電流多路模擬開關的多路精密電極測量系統。
  4. Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet

    基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高
  5. In gan hemt drain pulse current collapse experiments, drain current under pulse condition collapsed about 50 % than direct current condition and the pulse signal frequency affected little on current collapse. when gate voltage is small, the relationship between pulse width and drain current is i0 ( + t / 16 )

    在ganhemt漏極脈沖電流崩塌測試中，發現脈沖條件下漏極電流比直流時減小大約50 % ;脈沖信號頻率對電流崩塌效應影響較小;當柵壓較小時，隨著脈沖寬度的改變漏極電流按i0 （ + t / 16 ）的規律變化。
  6. In gan hemt gate pulse experiments, drain current under pulse conditon collapsed about 47 % than direct current condition and the pulse width affected little on current collapse. the relationship between drain current and pulse frequency is ncoxw [ m + ( n + k ? ) vgs + ( n + k ? ) vgs2 ] ( vgs - vth ) 2 / l

    在ganhemt柵極脈沖電流崩塌測試中，觀察到柵脈沖條件下漏極電流比直流情況下減小了47 % ;隨著信號頻率的改變，漏極電流按ncoxw [ m + （ n + k
  7. The pin silicon photodiode made by alice - china group, which has a large area and high performances, is an important part of the photon spectrometer ( pros ) pbwo4 detector read - out system on the alice experiment. the pin diode has a sensitive area of 16x17 mm2. its leakage current is lower than 5na at room temperature

    本工作研製的pin硅光電二極體的靈敏區面積為16x17mm2 ，常溫漏電流小於5na ，紫光區量子效率約為83 % ，結電容為110 - 120pf ，以及由pin光電二極體與電荷靈敏前置放大器組成的讀出系統的噪聲水平在- 25下小於527個等效噪聲電荷，並經過了長期性能穩定性的考驗
  8. The sample with low emitter efficiency has completed as the method of above. this lead to the greatly decrease of the reverse recovery time and the low reverse leakage and forward voltage, especially the excellent temperature character of the leakage. the test date shows that the samples reach the first class of international level

    本論文作者通過模擬測試，驗證了課題研究的理論設想，並設計製作了具有低陽極發射效率結構的高壓功率frd ，利用局域鉑摻雜和電子輻照相結合的壽命控制方式，實現器件反向恢復時間的極大減小，並且反向漏電流、軟度因子、正向壓降等關鍵參數也較理想，且具有極佳的漏電溫度特性，達到器件綜合性能的優良折衷，達到國際先進水平。
  9. Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density

    基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大
  10. All diodes have large reverse leak current density, which maybe caused by some reasons such as many ions are brought in course of evaporating metal on silicon surface of 6h - sic, chemical etch brings disfigurements such as burrs and dentate erodes as well as the rinse on surface of samples is not drastically accomplished

    兩個肖特基二極體反向漏電流較大，估計原因為正面蒸發金屬時引入大量離子、光刻引入毛刺和鉆蝕等缺陷、金屬與樣品粘附能力差及樣品背面歐姆接觸制備好后正面清洗不充分等。
  11. Leakage current is one of key factors for the energy resolution of the detectors, the mis detector has lower leakage current thus improve the energy resolution. the mis structure is a good contact type for the cdse detectors

    可見漏電流是影響探測器能量解析度的重要因素，具有mis接觸電極的探測器能有效地減小漏電流，提高能量解析度，因而是cdse探測器的一種較佳電極接觸方式。
  12. Small signal jfets work very well as low - leakage diodes by connecting drain & source together in log current - to - voltage converters and low leakage input protection

    在對數電流-電壓轉換器和低漏電流輸入保護電路中，通過連接小信號jfets的漏極和源極，可以使之作為低漏電流二極體很好的使用。
  13. In fet devices, the presence of an electrical field at the gate moderates the flow between the source and drain

    在fet器件中，柵極電場的存在會調節源極和漏極之間的電流。
  14. Quasi - static capacitance has been measured, when drain voltage is 0v, and gate voltage changes from ? 5v to 0v, the surface peak

    採用應力測試方法，獲得了algan / ganhemt漏極電流隨時間的變化。
  15. Under high drain voltage condition, the results proved that channel electrons are easily ejected into gan buffer layer and be trapped to induce current collapse

    在大漏極電壓條件下，溝道電子易於注入到gan緩沖層中，並被緩沖層中的陷阱所俘獲，耗盡二維電子氣，從而導致電流崩塌效應。
  16. Under a unified model of carrier transport over trap state established potential barrier at drain side, device degradation behavior such as asymmetric on - current recovery and threshold voltage degradation can be understood

    我們通過載流子在漏極附加陷阱態勢壘的輸運模型，解釋了器件在應力后出現的閾值電壓的退化現象和非對稱性開態電流恢復現象。
  17. Finally, according to the mosfet ' s parameter degradation due to hot - carrier effects and different application environment of mos devices on analog and digital circuits, the circuit structures for hot - carrier immunity are proposed for digital applications by adding a schottky diode in series with the drain of the nmosfet suffered heavily from hot - carrier degradation.,

    即在受熱載流子退化效應較嚴重的n mosfet漏極串聯一肖特基二極體的新型cmos數字電路結構和串聯一工作于線性區的常開n mosfet的mos模擬電路結構。經spice及電路可靠性模擬軟體bert2
  18. Standard test method for measuring transistor and diode leakage currents metric

    測量晶體管和二極漏泄電流的標準試驗方法
  19. Organic - inorganic nanocomposite, which are the complex of inorganic nanopraticles with organic compound, is a popular study subject in nanoscale composite. the nanocomposite can not only take advantage of several advantage, but also produce new properties. in this thesis, taking account of the problems in electrorheological fluids such as high leakage current, low yield stress and stability, the pan - batio3 nanocomposite with different structure are prepared by in - situ complex technology and modified sol - gel method

    根據目前電流變液中出現的問題（如屈服應力不夠高，漏電流密度不夠低，穩定性不夠好等問題） ，基於聚苯胺有較高的熱穩定性，且密度又小，特別是聚苯胺的介電常數和電導率均可按需調整，此外，鈦酸鋇無機納米粒子作為一種無機鐵電體，在電場作用下具有自發極化的能力，一方面可以為體系提供高的介電常數，另一方面又可保證體系的絕緣性能。
  20. By using phase shifting control between right bridge leg and left bridge leg, the output cy cloconverter commutating while the bi - polarity three - state high frequency ac volage from the input cycloconveter is zero, . and commutation overlap of the output cycloconverter and polarity selection of the input voltage, the leakage inductance energy and the output filtering inductance current are naturally commutated, and zvs switching of the output cycloconverter are realized, the surge voltage and surge current of the output cycloconverters are overcome

    通過輸入周波變換器右橋臂相對左橋臂的移相，讓輸出周波變換器功率開關在輸入周波變換器輸出的高頻交流電壓為零期間進行換流，並藉助輸出周波變換器換流重疊和輸入電壓極性選擇，從而實現了變壓器漏感能量和輸出濾波電感電流的自然換流、輸出周波變換器的zvs開關，解決了輸出周波變換器固有的電壓過沖和環流問題。
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