漏源電阻 的英文怎麼說

中文拼音 [lóuyuándiànzǔ]
漏源電阻 英文
drain source resistance
  • 漏 : Ⅰ動詞1 （從孔或縫中滴下、透出或掉出） leak; drip 2 （泄漏） divulge; disclose; leak 3 （遺漏） le...
  • 源 : 名詞1. （水流起頭的地方） source （of a river）; fountainhead 2. （來源） source; cause 3. （姓氏） a surname
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 阻 : 動詞（阻擋; 阻礙） block; hinder; impede; obstruct
  • 電阻 : （物質阻礙電流通過的性質） resistance; electric resistance （電路中兩點間在一定壓力下決定電流強度...
  1. Energy consume, electric strength, insulation resistance, ground conductivity, leakage current, microwave leakage, power input, normal temperature, humidity treatment, glow wire, horizontal flame, vertical flame, tracking, ball pressure, rainproof, water splash, dustproof, salt fog, endurance, motor load test, cord flexing, cord pulling, pull & torque test, lamp replacement, construction check etc

    能耗、電氣強度、絕緣電阻、接地連續性、泄漏電流、微波泄漏、功率、溫升、濕熱試驗、灼熱絲、水平燃燒、垂直燃燒、漏電起痕、球壓試驗、防雨淋、防濺水、粉塵、鹽霧、耐久性（壽命）試驗、電機負載試驗、電源線彎折、電源線提拉、拉扭力測試、燈頭互換性、安全結構檢查等。
  2. A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed

    提出了一個價帶附近的界面態分佈模型，用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線；分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響；論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性，分別模擬了室溫下和300時sicpmos器件的輸出特性，分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。
  3. By compared with the simulation results and the experiment results, we come to the conclusions that : ( 1 ) circuit with assistant network can widen soft - switching extent in lagging arm, reduces duty - cycle loss on the secondary, diminishes switching dissipation of inverter spot - welding power source. ( 2 ) the range of resonant capacitor, the important factor to soft - switching process, not only affects zero - voltage turn - off of power switches, but also affects the range of zero - voltage turn - on of power switches. so resonant capacitors must be considered according to many aspects ; ( 3 ) it easily fulfils soft - switching condition in lagging arm as leakage inductance of power transformer increases, but bigger leakage inductance of power transformer increases opening dissipation of transformer and decreases efficiency of soft - switching inverter power source

    通過模擬結果與軟開關點焊逆變器試驗結果的對比分析，得到了如下主要結論：採用輔助網路可以完全拓寬全橋軟開關逆變器的滯后橋臂軟開關范圍，減小了次級占空比丟失，降低了逆變電阻點焊電源的開關損耗；諧振電容是影響軟開關工作狀態的重要因素，其大小不僅影響開關管的零電壓關斷，同時也影響開關管的零電壓開通范圍，因此，諧振電容應該綜合考慮；功率變壓器漏感越大，越容易滿足滯后橋臂的軟開關條件，但是大的漏感也使變壓器的通態損耗增加，降低了軟開關逆變器的效率。
  4. The effects of the operation temperatures, gate voltages, drain - source voltages and magnetic field upon the characteristic of device are analyzed in detail. coulomb blockade and single electron tunneling are observed in the devices. 3

    詳細地分析了工作溫度、柵極電壓、漏源電壓和磁場對其特性的影響，觀測到明顯的庫侖阻塞效應和單電子隧穿效應，器件的工作溫度可達到77k以上。
  5. The source drain extension ( sde ) structure and its reliability are thoroughly studied. first, it is shown that the sde structure can suppress short channel effect effectively and the parasitic resistance at the sde region has an effect on performance. it is proposed that increasing the dose condition in the sde region can reduce the parasitic resistance and should be adopted to achieve high performance for deep submicron devices

    本文對深亞微米源漏擴展mos器件結構及其可靠性進行了深入研究，首先通過模擬驗證了源漏擴展（ sde ）結構對短溝道效應的抑制， sde區寄生電阻對器件性能的影響以及sde區摻雜濃度的提高對器件性能的改善，指出了器件尺寸進一步減小后，提高源漏擴展區摻雜濃度的必要性。
  6. Because of the great potential of sic mosfets and circuits, in this paper, the characteristics of 6h - sic pmosfets are studied systematically, emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented. the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation

    研究了sic的晶體結構，分析了sic中雜質的不完全離化現象以及sic中空穴遷移率的擬和公式；用解一維poisson方程的方法分析了sicpmos空間電荷區的電特性；本論文重點分析了界面態分佈和源漏串聯電阻對sicpmos器件特性的影響。
  7. We probed into the most source - drain resistance and its temperature behavior particularly. the result of calculation indicated that the attenuation of source - drain current caused by the source - drain resistance increased when temperature increased

    對寄生的漏源串聯電阻及其溫度特性進行了詳細探討，計算結果表明，漏源串聯電阻給漏源電流造成的衰減在溫度升高后變得很大。
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