漏電導 的英文怎麼說

中文拼音 [lóudiàndǎo]
漏電導 英文
false conductance
  • 漏 : Ⅰ動詞1 （從孔或縫中滴下、透出或掉出） leak; drip 2 （泄漏） divulge; disclose; leak 3 （遺漏） le...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
  • 漏電 : leakage of electricity; leakage漏電保護 earth leakage protection; 漏電保護開關 earth leakage circ...
  1. Hh silc is found to have a more pronounced transient effect

    熱空穴應力導致的漏電流具有更加顯著的瞬態特性。
  2. Practical application guidelines for leakage current protection devices

    泄漏電流保護裝置的實施導則
  3. These problems boost the study of high - k materials as the alternatives of sio2 gate dielectrics. among all high - k gate dielectric materials, hafnium oxide ( hfo2 ) is being extensively investigated as one of the most promising candidate materials due to its superior thermal stability with poly - si, biggish constant and reasonable band alignment. our researches focus on hfo2 dielectrics

    高k柵介質材料已經被廣泛地研究來替代sio _ 2 ，以降低柵泄漏電流和改善可靠性，其中， hfo _ 2由於其較大的介電常數、較大的禁帶寬度、與si的導帶和價帶較大的偏置、以及與si的高的熱力學穩定性等特徵，被認為是最有希望的替代sio _ 2的柵介質材料之一。
  4. Test results indicated : with the hoist of altitude, the increase of ice amount and the rise of pollutant, the average flashover voltage reduced. the character exponent generally depends on the insulator profile, ice amount, ice state and pollution severity etc. by means of a high - speed camera, a data acquisition system and high voltage test facilities, a series of the flashover processes on ice surfaces were record. the experimental results form this study and the subsequent theoretical analyses suggested : the thermal ionization of the air in front of an arc root resulted in arc movement ; the electrostatic force had an auxiliary effect of impelling arc propagation ; the electrical

    通過對攝像機、數據採集系統及高壓試驗裝置記錄覆冰絕緣子表面閃絡電弧的發展過程的試驗結果進行理論分析得出：弧根周圍空氣的熱電離導致了電弧的發展，靜電場力對電弧的發展起到了加速作用，電擊穿僅發生在閃絡最終的跳躍階段；通過測量閃絡過程中的放電電壓、泄漏電流、閃絡時間、覆冰水電導率、電弧長度及電弧半徑等參數，得到了不同階段電弧（電弧起弧階段、電弧發展階段及完全閃絡）的發展速度、臨界電弧長度均隨覆冰水電導率的增加而減小。
  5. The characteristics of temperature distribution in vertical and horizontal directions and the conductance distribution in horizontal direction in an earth dam were analyzed, and the locations, distribution characteristics, ranges, and leakage rate of main leakage passages of the dam were calculated by use of the virtual heat - source method presented in this paper, the result of study provides a scientific basis for dam leakage control

    分析某貯灰場土壩垂向和水平溫度分佈特徵、電導水平分佈特徵，並利用滲漏探測虛擬熱源法模型，計算出該土壩的集中滲漏通道的空間位置、展布特點、范圍大小和滲漏強度，為堤壩滲漏治理提供科學依據。
  6. Secondly, the transient characteristics of fn tunneling and hot hole ( hh ) stress induced leakage current ( silc ) in ultra - thin gate oxide are investigated respectively in this dissertation

    其次，本文分別研究了fn隧穿應力和熱空穴（ hh ）應力導致的超薄柵氧化層漏電流瞬態特性。
  7. The blast of sublevel caving together with the blast of undercutting, crater opening and slot cutting are brought about successfully at same time in the practice of sublevel drilling and stope mining with nonelectric blast ignition system, and the productivity of mining is increased

    在分段鑿巖階段礦房法回採實踐中，用非電導爆管雷管起爆系統成功地實現了階段落礦爆破與拉底、辟漏、切槽爆破一次同步進行，提高了生產效率。
  8. Once data has been written in dram, charges stored in each capacitor must maintain more than the refresh time so that the information stored in each dram cell can be read out correctly

    數據一旦被寫進dram ，每個小電容上電荷的存儲時間就必須大於dram的刷新脈沖時間，如果由於漏電流致使存儲的電荷丟失，就會導致數據讀取的誤操作。
  9. With the research on hfoxny gate dielectrics, it can reduces leakage current and increase crystallizing point ; our research can help to realize the leakage current mechanism and silc effect of hfo2, futher more it can offer us direction on optimize the fabrication process

    結果表明，與hfo :相比，氮化的hfo :具有小的漏電流。我們的研究結果有助於進一步了解hro :柵介質的泄漏電流機制和silc效應的特徵，為進一步優化hfo :高k柵介質的制備工藝提供指導。
  10. We researched fabrication at different asputtering and annealing atmosphere, the different process conduced different electrical properties. we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4. the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc. there are different leakage current mechanism at influence of sil. c ; 5

    研究表明，在優化工藝條件下制備的hfo _ 2介質層中，襯底注入條件下由於其較低的體和界面缺陷密度，漏電流的輸運機制主要以schottky發射為主; silc效應導致hfoz / si界面缺陷態的增加，從而使得襯底注入條件下，柵泄漏電流機制不僅有schottky發射還有f一p發射機制起主要作用; 5 ）初步研究了氮化的hfo : （ hroxny ）柵介質的電學特徵。
  11. Overhead electrical conductors - creep test procedures for stranded conductors iec 61395 : 1998 ; german version en 61395 : 1998

    架空電力導線.絞合導線的漏電試驗
  12. Leakance per unit length

    每單位長度的漏泄電導
  13. Under both stress conditions, stress induced leakage current follows a power law against stress time with different power factors. for hh silc, the exponential factor significantly deviates from - 1

    在這兩種應力條件下，應力導致的漏電流（ silc ）與時間的關系均服從冪函數關系，但是二者的冪指數不同。
  14. Organic - inorganic nanocomposite, which are the complex of inorganic nanopraticles with organic compound, is a popular study subject in nanoscale composite. the nanocomposite can not only take advantage of several advantage, but also produce new properties. in this thesis, taking account of the problems in electrorheological fluids such as high leakage current, low yield stress and stability, the pan - batio3 nanocomposite with different structure are prepared by in - situ complex technology and modified sol - gel method

    根據目前電流變液中出現的問題（如屈服應力不夠高，漏電流密度不夠低，穩定性不夠好等問題） ，基於聚苯胺有較高的熱穩定性，且密度又小，特別是聚苯胺的介電常數和電導率均可按需調整，此外，鈦酸鋇無機納米粒子作為一種無機鐵電體，在電場作用下具有自發極化的能力，一方面可以為體系提供高的介電常數，另一方面又可保證體系的絕緣性能。
  15. But its high leakage current and poor retention is the main obstacle to its application. improving the quality of ferroelectric thin films and avoiding the reaction and diffusion between f - s interfaces is one of the crucial keys to overcome this problem. that is to say that the preparation and properties of ferroelectric thin films is compatible with the semiconductor integrated circuit

    但是其漏電流過大和保持力差成為制約其實用化的最大障礙，攻克這一難題的關鍵之一就在於鐵電薄膜質量的進一步提高，盡量減少或者避免f - s界面的互擴散，也就是說鐵電薄膜的制備工藝和各項鐵電性能必須與半導體集成工藝兼容。
  16. Apecial capacitor for lighting metal halide lamp features and uses the capacitor has advantages of low dissipation, high insulation resistance, good self - healing character, and steady electricity perfomance, anti - striking current, strong over - carrying capacity, etc

    此裝置為一個供電軟線組，能探測流過內部導線的漏電流和飛弧，並按預設的漏電流大小斷開電路，減少負載端由於泄漏電流形成火災的可能性。
  17. The difficulty of this circuit lies in the high requirements of leakage current and on resistance

    整個電路難度主要在於漏電流和導通電阻的要求比較高。
  18. The effect of interface state charges on the threshold voltage, drain current, transconductance and field - effect mobility of n - channel sic mosfet is analyzed with numerical method by establishing the model of the interface state density exponential distribution

    建立界面態密度的指數分佈模型，用數值方法較為詳細的分析了界面態電荷對n溝mosfet器件閾值，漏電流，跨導和場效應遷移率的影響。
  19. Trap density is calculated and found to depend on trap level energy in a power law relationship, which proves the correctness of the investigated leakage current mechanism and contributes to the succedent investigation of film fabrication

    最後，通過漏電流特性計算了bst薄膜陷阱密度的空間分佈、能帶分佈等微觀信息，對bst薄膜的應用研究有一定指導意義。
  20. Leaks are detected by sensing the conductivity of the contaminated fluid through the moisture detection probes located in the motor seal chamber and stator housing

    當污水通過位於電機密封腔和定子外殼的潮氣探頭時，其電導率被檢測到，從而檢測道泄漏的發生。
分享友人
分享到 Line

分享到臉書