漏電距離 的英文怎麼說

中文拼音 [lóudiànjùlí]
漏電距離 英文
creepage distance
  • 漏 : Ⅰ動詞1 （從孔或縫中滴下、透出或掉出） leak; drip 2 （泄漏） divulge; disclose; leak 3 （遺漏） le...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 距 : Ⅰ名詞1 （距離） distance 2 （雄雞、雉等的腿的後面突出像腳趾的部分） spur （of a cock etc ）Ⅱ動詞...
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 漏電 : leakage of electricity; leakage漏電保護 earth leakage protection; 漏電保護開關 earth leakage circ...
  • 距離 : 1 （相隔的長度） distance; range; gap; space; spacing; separation 2 （相距） be apart from; be aw...
  1. Insulation coordination including clearances and creepage distances for electrical equipment

    電氣設備的包括間隙和漏電距離的絕緣配合
  2. Railway applications - insulation coordination - part 1 : basic requirements - clearances and creepage distances for all electrical and electronic equipment

    鐵路設施.絕緣協調.第1部分:基本要求.所有電氣和電子設備的余隙距離和漏電距離
  3. Insulation coordination for equipment within low - voltage systems - a comprehensive method for determining clearances and creepage distances equal to or less than 2 mm

    低壓系統內設備的絕緣配合.等於或低於2mm的余隙距離和漏電距離的綜合測定法
  4. We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive, hysteresis, influence of sidegating effect on mesfet threshold voltage, influence of drain - source voltage on sidegating threshold voltage, influence of exchanging drain and source electrode on sidegating threshold voltage, relation between sidegating threshold voltage and the distance between side - gate and mesfet, relation between sidegating effect and floating gate, and so on

    本文還採用平面選擇離子注入隔離工藝，開展了旁柵效應的光敏特性、遲滯現象、旁柵效應對mesfet閾值電壓的影響、 mesfet漏源電壓對旁柵閾值電壓的影響、漏源交換對旁柵閾值電壓的影響、旁柵閾值電壓與旁柵距的關系、旁柵效應與浮柵的關系等研究。
  5. Finally, after the long - term ion migration test, we analyzed the relation between the current and accumulative charge with the test time, computed the ion mobility and migration distance, and analyzed the distribution variety of na + and k + in the test samples

    對10支試品進行了長期離子遷移試驗，測量了泄漏電流曲線和累計電荷量隨時間變化曲線，計算了試品的離子遷移率和遷移距離，並對試品na ~ + 、 k ~ +的含量進行了化學分析。
  6. Given this distance, it is highly unlikely that hksar would be affected significantly following any accidental release of radioactivity from the nuclear power stations

    由於核電站距離香港市區甚遠約五十公里，香港因核電站意外泄漏輻射，而嚴重受到影響的機會微乎其微。
  7. In this paper, the soi technology is applied to the integrated circuit fabrication. soi technology overcomes some disadvantages of bulk silicon because of its inherent structure. it has the advantages such as no latch - up effect, low parasitic capacitance, high transconductance, simple structure, high density and good anti - radiation

    Soi技術以其獨特的材料結構有效地克服了體硅材料的不足，它具有無閉鎖效應；漏源寄生電容小；較高的跨導和電流驅動能力；器件結構簡單；器件之間距離小；集成度高；抗輻射性能優良等優點。
  8. The cable is manufactured on argon arc welding, crrugating and slotting production lind with the most advanced technolongy byslotting the holes along outer conductor axis, so the evenly - distributed rdlatively strong radiating signal in the close vicinty lf the cable along ts axis make it possible signal transimission, across long distance in uncovered area

    50歐姆漏泄同軸電纜系採用現今最先進的氬弧焊、軋紋和可多向開槽設備，切削一組合適的外導體槽孔，使電纜周圍沿信號傳輸方向具有強度相對均勻的射頻信號，實現信號在分立天線盲區的長距離輸送。
  9. In a room containing a bath or shower, the provision of socket outlets should comply with iec 60364 - 7 - 701 ( to be installed at location 0. 6 m away from shower basin or bath tub ) and the socket outlets should be protected by a residual current protective device ( rcd ) with a residual operating current not exceeding 30ma

    設有浴缸或花灑的浴室內，插座應符合國際標準iec60364 - 7 - 701的規定（包括安裝的位置距離浴盆或浴缸0 . 6米以外） ，並由餘差啟動電流不超過30毫安的電流式漏電斷路器加以保護。
  10. Insulation coordination for equipment within low - voltage systems - part 5 : a comprehensive method for determining clearances and creepage distances equal to or less than 2 mm

    低壓系統內設備的絕緣配合.第5部分:等於或低於2mm的余隙距離和漏電距離的綜合測定法
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