濺射刻蝕 的英文怎麼說

中文拼音 [jiànshèkèshí]
濺射刻蝕 英文
ion sputter etching
  • 濺 : 動詞（液體受沖擊向四外射出） splash; spatter
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  • 蝕 : Ⅰ動詞1. （損失; 虧耗） lose 2. （腐蝕） erode; corrode Ⅱ名詞（天體現象） eclipse
  1. The processes include the deposition of the waveguide film, the design and fabrication of the mask pattern, the lithography, the metal coating with a magnetic sputtering, the lift - off process for the metal mask, the dry deep etching by icp, the slicing of the wafer, the polishing of the cutting edge, the fiber - to - waveguide alignment and at last, the performance testing. some edg chip samples are fabricated

    對設計好的集成波導器件，本論文設計並試驗了器件的製作的全部工藝，包括波導薄膜的沉積，掩模的設計製作，光刻，濺射金屬薄膜，剝離法製作金屬掩模，干法深刻蝕，矽片切割，端面磨拋，波導對準和性能測試。
  2. The selective etching of the evaporated or squeezed layers is a critical step in preserving yield.

    蒸發層和濺射層的選擇刻蝕是保證成品的關鍵步驟。
  3. The theory of ion - beam etching and ion sources are reviewed. the classification of ion - beam etching are introduced. according to the mechanism that ion sputtering leads to faceting, trenching, reflection and redeposition, some relative solutions are put forward

    綜合敘述了離子束刻蝕技術和離子源的工作原理，簡單介紹了離子束刻蝕的分類，闡述了離子束刻蝕的物理濺射效應導致的刻面，開槽，再沉積等現象的產生機理及解決辦法，分析了kaufman離子源進行ribe的可行性及出現的問題。
  4. Besides of those, the pattern of the target is novel after the long time ' s erosion. there is no erosion ring on its surface, so we can use this method to improve the utilization rate greatly

    更重要的是：此時靶面被刻蝕的狀態比普通磁控濺射的要均勻得多，刻蝕深度值是從邊緣到中間逐漸增大的，在靶面並沒有出現通常的刻蝕環，因此這種磁控配置大大提高了靶的利用率。
  5. The work mainly consists of four parts : the first part is to use oxidation and lpcvd technique to produce sio2 mask film and si3n4 insulation film in order to enhance the heating efficiency of micro chamber, and guarantee the carry out of the reaction. the second part is to use the combination of dry etching and wet etching to produce reaction micro chamber, it is the container which carry out the pcr reaction, and dna sample carry out amplification reaction here. the third part is to use the sputtering, photolithography to produce heaters and temperature sensors which heat the reaction micro chamber and provide the temperature condition for the pcr reaction

    首先，利用氧化工藝和lpcvd技術，生長sio _ 2掩膜層和si _ 3n _ 4絕緣層，以提高反應腔的熱效率，保證擴增反應的順利進行；其次，用濕法腐蝕和干法刻蝕相結合的方法加工微型腔體，使之作為dna樣品進行pcr擴增反應的容器；第三，用濺射、光刻等工藝在微型腔體底部製作微型加熱器和溫度傳感器，實現對反應腔體的加熱及其溫度的精確測量，提供pcr擴增反應所需的溫度條件。
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