濺射法 的英文怎麼說

中文拼音 [jiànshèfǎ]
濺射法 英文
sputter method
  • 濺 : 動詞（液體受沖擊向四外射出） splash; spatter
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  • 法 : Ⅰ名詞1 （由國家制定或認可的行為規則的總稱） law 2 （方法; 方式） way; method; mode; means 3 （標...
  1. Copper has been deposited on surface of the al mmcs as interlayer by magnetron sputtering, tlp bonding of al mmcs with these interlays, the joints shear strength of tlp bonding using deposited film was as much as the joint shear strength of tlp bonding using cu foil. removing the oxidation on the surface before deposition, copper was coated by magnetron sputtering as tlp bonding interlayer

    待連接表面通過磁控濺射法沉積銅膜作為中間層進行瞬間液相連接，得到的接頭強度與銅箔中間層進行瞬間液相連接得到的接頭強度相當，而使用磁控濺射法去除待連接表面氧化膜后沉積銅膜作為中間層進行瞬間液相連接的接頭強度提高7 . 6左右。
  2. Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate

    在jgp560c型超高真空多功能磁控濺射鍍膜機上，採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜，揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大，隨濺射功率的增大沉積速率快速增大。
  3. The 3d electrons increased with the content of mn doping increasing, and the electrical property increased accordingly as the electron transport path improved. it is confirmed that all the orthorhombic perovskite phase which is formed initially at the heat treatment temperature of about 600c and thoroughly above 850c are observed in the lcmto thin film deposited on si ( 100 ) substrate by rf magneto - controlled sputtering

    確認了採用射頻磁控濺射法于si （ 100 ）基板上生長的薄膜至多在600熱處理已開始形成晶相，形成的晶相全部是正交晶系鈣欽礦相，提高熱處理溫度，薄膜中晶相含量相對增大，高於850后晶相基本形成完畢。
  4. The zircondri filin wtut rirconia wa prepared and the removing technology of the zirconia on the zirconium sdrices was obtalned. the methods of chemistry and magnetron sputtring plating were used in order to platc a palladium film, which is characteristic of self catalysis for hydrogen and the sole h - permselectivity on the clean rirconium sdrices prepared by the methods of electrochemitw and ( or ) high temperatur vacuum hydrgenization, which was firstly studied. the plating tedrilogy was obained and the surface modified zirconium membran was prepared

    在利用電化學法和真空高溫除氧加氫法去除了鋯表面氧化膜的基礎上，分別採用化學法、磁控濺射法兩種鍍膜技術在其表面上鍍上了一層對氫具有自催化分解、唯一選擇滲透性的金屬鈀膜，首次獲得了鋯基材膜表面上鍍鈀的制備工藝，成功制備了鋯表面改性選擇滲氫膜。
  5. Target material was hexagonal boron nitride ( hbn ) and working gas was pure argon

    用射頻濺射法在si襯底上制備立方氮化硼，靶材為hbn ， 。工作氣體為氬氣。
  6. Dielectric loss of amorphous alumina films grown by reactive rf magnetron sputtering

    磁控濺射法制備氧化鋁薄膜及其介電損耗
  7. Determined by dsc. whereafter, the surface micro - morphology of both sides of tini sma thin film deposited on glass was investigated by atomic force microscope ( afm ), and the difference of morphology between the two sides is observed. it has been shown that, in the growing surface of sputtered tini film, the trend of grain to accumulating along the normal direction like a column is clearly observed, and the grain is very loose which resulted in more microcavities, but in the surface facing to glass substrate, grain is so compact that there are hardly microcavities

    通過濺射法，在玻璃襯底上淀積了tini薄膜，並在600進行了真空退火， dsc法測得其馬氏體逆相變峰值溫度為75 ，利用原子力顯微鏡，對玻璃基tini形狀記憶合金薄膜的襯底面與生長面進行了表面微觀形貌分析，發現：生長面晶粒呈現出沿薄膜法線方向柱狀堆積的趨勢，晶粒緻密性差，微孔洞多；而襯底面晶粒緻密，幾乎沒有微孔洞存在。
  8. The study on low temperature pvd deposited sic film was carried out - m - employing bias assisted magnetron sputtering. furthermore, pvd deposited sic film mainly containing cubic phase was achieved at room temperature for. the first time

    採用偏壓輔助rf濺射法，對低溫物理氣相沉積sic薄膜進行了研究，並首次在室溫下制備出含有? sic構相併以其為主的sic薄膜。
  9. In this thesis, we research the characters on the ion beam sputtering system, and prepare tiny films and cnx / tiny multilayers by ion beam sputtering. the best parameters of preparing cnx films are explored. we use the tiny films as template to promote the growth of cnx films

    本文對離子源的濺射特性進行了研究，採用離子束濺射法制備了tin _ y單層薄膜和cn _ x tin _ y多層薄膜，探索該法制備cn _ x薄膜的最佳工藝參數，並利用tin _ y薄膜為襯底以促進cn _ x薄膜的生長。
  10. In this paper, amorphous tio _ 2 : w films deposited on the sildes by magnetron sputtering are studed. and the effecf of process parameters on photocatalytic properties of these films are disussed. tio _ 2 : w films were deposited on the slides with pure ti and pure w targets

    本研究課題以純鈦靶和純鎢靶為靶材，採用反應磁控濺射法在玻璃基片上制備非晶態tio _ 2 : w薄膜。
  11. First, we prepared amorphous bacacuo precursor thin films on single crystal laalo3 ( 001 ) substrate by rf magnetron sputtering. then tl2ba2cacu2o8 hts thin films were obtained by an ex situ post annealing

    本文採用射頻磁控濺射法在laalo3 （ 001 ）單晶基片上制備了bacacuo非晶前驅物薄膜，然後將前驅物薄膜進行非原位鉈化處理，制備了tl2ba2cacu2o8高溫超導薄膜。
  12. Long throw sputtering method

    長拋濺射法
  13. In the work, mid - frequency pulse magnetron sputtering is used to prepare znoral thin films used as the back reflector of the thin silicon films solar cells. the best techological condition was obtained by optimizing the preparing conditions, ( var is decided by the deposition rate, target voltage : 265v, gas pressure : 0. 6pa, the high base vacuum is expected

    本文採用中頻脈沖磁控濺射法，通過優化zno ： al薄膜的制備工藝，如靶電壓、本底真空度、工作氣壓、襯底溫度、 o _ 2 ar ，得到可用於硅薄膜太陽能電池背電極的zno ： al薄膜。
  14. ( 4 ) the study of the optical band gap of cnx film by uv - vis spectrophotometer. ( 5 ) by using the microhardness tester, we study the hardness of cnx film on the ceremic substrate by dc magnetron reactive sputtering with the feed ar and n2 flow rate, film thickness, substrate temperature and substrate bias

    （ 5 ）用直流磁控反應濺射法，以陶瓷作為襯底，對在ar和n2不同流量、不同膜厚、不同基片溫度和對基片施加不同偏壓下沉積的薄膜，用< wp = 4 >顯微硬度計研究測試了不同工藝參數下的相應硬度。
  15. Raman spectroscopy was used to analyze the structure. ge - ga - s - s glass films were deposited by rf magneto sputtering

    利用磁控濺射法制備了兩個組分的ge - ga - s - se玻璃薄膜。
  16. In this paper, tio2 films as ecological self - clean glass material prepared by magnetron sputtering method were discussed in the following aspects : the preparation technology of tio2 films by magnetron sputtering method, the control of the surface microstructure, the effect of the surface microstructure on the photocatalytic activity and the optical performance of tio2 films. sem was used to observe the surface topography. xrd was used to explore the crystal form, and crystal size

    為了解決以往溶膠?凝膠法制備的tio _ 2薄膜膜層質量不好的缺點，本論文對磁控濺射法在玻璃表面制備tio _ 2薄膜作為生態自潔凈玻璃材料進行了一系列探索與應用基礎研究，包括tio _ 2薄膜的磁控濺射法制備工藝、表面微觀結構的控制、表面微觀結構對tio _ 2薄膜光催化性能、透光性影響等。
  17. The results indicate that it has an excellent surface. aln thin film was prepared from an aluminum target by dc and af reactive magnetron sputtering in nitrogen gas mixed with argon gas

    氮化鋁薄膜樣品是利用高純鋁靶，在氮氣加氬氣氣氛下用直流和射頻反應磁控濺射法制備的。
  18. To meet the demands of transparent electrodes of oled devices, ito films were deposited at low substrate temperature, and their performances were discussed in this paper

    首先，依據氫氣的還原作用在濺射氣氛中引入水蒸氣，採用直流磁控濺射法在襯底溫度低於200的條件下制備ito膜。
  19. Ultrathin aluminum films were prepared by dc reactive magnetron sputtering. the target was made by 99. 999 % pure aluminum

    採用直流磁控濺射法濺射純度為99 . 999 %的鋁靶制備了超薄鋁膜。
  20. In the first part of the thesis tin film in different n2 partial pressure prepared by reactive magnetron sputtering is studied

    本文首先研究了磁控濺射法在不同氮氣分壓下所制備的tin薄膜。
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