濺射薄膜 的英文怎麼說

中文拼音 [jiànshè]
濺射薄膜 英文
thin sputtered film
  • : 動詞(液體受沖擊向四外射出) splash; spatter
  • : Ⅰ動詞1 (用推力或彈力送出) shoot; fire 2 (液體受到壓力迅速擠出) discharge in a jet 3 (放出) ...
  • : 名詞[方言] (浮萍) duckweed
  • : 名詞1. [生物學] (像薄皮的組織) membrane 2. (像膜的薄皮) film; thin coating
  • 薄膜 : thin film; film; diaphragm
  1. Some gas - sensitive test to deoxidizing gas have carried out based on tio _ 2 films by sputtering and doped some impurity. the experimental results showed that tio _ 2 films have different electron injecting principle and reactive mechanism, the behaviors of gas - sensor for hydrogen and ethanol manifest dissimilitude. this is due to that the oxygen vacancies were compensated by the impurity

    制備的摻入部分雜質對還原性氣體進行氣敏測試,發現tio _ 2對酒精氣體和氫氣有不同的反應機制和電子注入機理,氣敏特性也表現出不同,而雜質的引入反而降低了tio _ 2的敏感性,可能是由於雜質對氧空位的補償所引起。
  2. Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate

    在jgp560c型超高真空多功能磁控機上,採用直流磁控法在cdznte晶體上制備出cu ag合金,揭示了氣體流量、直流功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明功率對沉積速率的影響最大,隨功率的增大沉積速率快速增大。
  3. The bilayer manganite film la2 - 2xsr1 + 2xmn207 ( x = 0. 32 ) were successfully prepared by pulsed laser deposition ( pld ) method

    我們採用脈沖激光沉積( pld )方法來制備雙層
  4. Compound medium wave - guide film on columned li - ferrites was made by magnetron sputtering system

    用磁控的方法在圓柱鋰鐵氧體表面鍍覆了復合介質波導
  5. The 3d electrons increased with the content of mn doping increasing, and the electrical property increased accordingly as the electron transport path improved. it is confirmed that all the orthorhombic perovskite phase which is formed initially at the heat treatment temperature of about 600c and thoroughly above 850c are observed in the lcmto thin film deposited on si ( 100 ) substrate by rf magneto - controlled sputtering

    確認了採用頻磁控法于si ( 100 )基板上生長的至多在600熱處理已開始形成晶相,形成的晶相全部是正交晶系鈣欽礦相,提高熱處理溫度,中晶相含量相對增大,高於850后晶相基本形成完畢。
  6. It was concluded that, the structure of ito thin films were influenced by many working parameters such as substrate temperature, oxygenous pressure and substrate and so on. it was indicated by sem spectra of zno thin films that the surface of the sample was leveled off, and the crystals were felsitic

    結果表明,對于ito的光電性能結構的擇優取向性和與襯底溫度、氧氣壓等工藝參數有很大關系, ito的sem表明,樣品表面較平整,且晶粒也比較緻密。
  7. Firstly, the tio2 thin films are deposited by dc reactive magnetron sputtering apparatus, and characterlized by n & k analyzer1200, x - ray diffraction spectroscopy ( xrd ), scanning electronic microscopy ( sem ), alpha - step500. and it was analyzed that the effect on performance and structure of films with the change of argon flow, total gas pressure, the substrate - to - target distance and temperature

    第一、應用穩定的直流磁控設備制備tio2減反並通過n & kanalyzer1200光學分析儀、 x線衍分析( xrd ) 、掃描電子顯微鏡( sem ) 、 alpha - step500型臺階儀等儀器對進行表徵,分析氧分壓、總氣壓、工作溫度、靶基距等制備工藝參數對性能結構的影響。
  8. Upon comprehensively reviews of the predecessors ? results, using the experience of other countries for reference, and implementing thin film technology, the author have developed the microsensor in this thesis by sputtering metal material on a silex substrate

    本文在綜合評述前人工作成果的基礎上,借鑒國外的製作和研究經驗,利用技術,在石英基片上銅、鎳和二氧化硅,形成熱流計。
  9. The results are as follows : as the sputtering pressure increases, the atomic ratio of o to ti increase in the films, which is attributed to the fact that the absolute oxygen content increases, as the pressure increases despite the ratio of 62 to ar remains unchangless

    結果發現:在氧氣、氬氣分壓比不變的條件下,表面o和ti原子比增大,這可能是由於氣壓增大,而氧氣與氬氣比未變,真空室中氧氣的絕對含量增加,參加反應的氧原子數增加的緣故造成的。
  10. The sputtered thin film strain gauge technology provides excellent stability and a high burst pressure rating

    濺射薄膜應變測量技術為我們提供了良好的穩定性和很高的破壞額定壓力值。
  11. High quality nickel films have been successfully plated on cenosphere particles by dc magnetron sputtering at mom temperature

    摘要本文論述了在空心微珠表面磁控鍍金屬的方法。
  12. We prepare the si - sio2 and ge - sio2 thin film by using the dual ion beam co - sputtering method and the rf co - sputtering technique respectively, adjusting the substrate temperature ( ts ) and the annealing temperature ( ta ). then we analysis the structure of the thin film by using the xrd and tem

    論文採用雙離子束頻磁控沉積技術,通過改變沉積過程中基片溫度( t _ s )以及制備完成後退火溫度( t _ a )分別制備了si - sio _ 2和ge - sio _ 2
  13. We study the formation mechanism of semiconductor grains from the aspect of the thermodynamics and the dynamics of the grains and the chemistry reaction in the films

    濺射薄膜沉積時或退火處理時的中顆粒的熱力學和動力學的角度以及是否存在化學反應對半導體顆粒的形成機理做了進一步的探討。
  14. In order to optimize parameters of sputter - depositeing used to manufacture silicon - based tm films in the next step, the dissertation analyses and explains the difference between the two surfaces of sputtered tini film from sputtering factors

    為優化工藝參數以用於后續的硅基tini制備,本文從工藝因素入手,對玻璃基濺射薄膜兩個表面的質量差異進行了分析,並給出合理解釋。
  15. The one deposited at 300 substrate temperature owns denser crystallites. during the annealing process, with the increasing of annealing temperature, the crystallites become bigger, and crystalline phase begins to transfer. when the annealing temperature gets to 800, tio2 transfers to rutile structure completely

    ( 2 )常溫下制備的tio _ 2是無定型的, 300濺射薄膜表面有緻密的晶粒,熱處理溫度升高,晶粒變大,晶相開始轉化, 800退火tio _ 2完全轉化為金紅石結構。
  16. Cu - fe thin films were fabricated by a direction - current ( dc ) magnetron sputtering system

    本文首先採用直流磁控方法制備了cu - fe過飽和固溶體
  17. In order to fabricate excellent electro - optic materials, this paper focused on the choice of electro - optic materials, the fabrication of ceramics target, developing new rf magnetron sputtering system, and the preparation of the electro - optic film, etc. the following results were obtained

    本文圍繞制備性能優異的電光材料,從電光材料的選擇、材料配比、靶材制備、頻磁控設備的研製、電光材料製作等方面進行了研究。
  18. With the development of thin film science and technology, various thin film preparation techniques developed rapidly, as a result, conventional so - called filming has developed from single vacuum evaporation to many new film preparation techniques, such as ion plating, sputtering, laser deposition, cvd, pecvd, mocvd, mbe, liquid growth, microwave and mtwecr, etc., of which vacuum evaporation is the common technology for thin film preparation, because it has the distinct advantage of high quality of film deposition, good control - ability of deposition rate and high versatility

    隨著科學與技術的發展,各種制備方法得到了迅速發展,傳統的所謂鍍,已從單一的真空蒸發發展到包括蒸鍍、離子鍍、、化學氣相沉積( cvd ) 、 pecvd 、 mocvd 、分子束外延( mbe ) 、液相生長、微波法及微波電子共旋( mwecr )等在內的成技術。其中電子束蒸發技術是一種常用的制備技術,它具有成質量高,速率可控性好,通用性強等優點。
  19. The thesis studies the films " structures and properties by means of scanning electron microscope ( sem ), transmission electron microscope ( tem ), x - ray photoelectron spectrometer ( xps ), raman spectrometer, uv - vis spectrometer, thin films analysis apparatus, and target materials. it is the difference of atom ordinal number and sputter area that results in ce prior sputter and ce / ti molar ratio in films is 50 % more than ce / ti molar ratio in practical target design

    利用各種分析測試方法( sem 、 tem 、 xrd 、 xps 、 raman 、 uv - vis 、分析儀等)對的結構與性能進行了全面研究,得出如下結論:靶材的由於ce 、 ti的原子序數不同,閾不同而造成ce的優先中的ce ti摩爾比與實際靶材設計的ce ti摩爾比高50左右。
  20. Duxing researching the preparation, microstructure and photoelecttic properties of cu - mgf, cermet films, the microstructure, optical and stress properties of cu films prepared by dc magnetron sputtering and mgf, by ar magnetron sputtering were also studied

    作為cu又復合納米金屬陶瓷的制備、微結構及光電特性研究的基礎,研究了不同厚度直流磁控cll頻磁控mgf 。的微結構、光學常數以及應力特性。
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