濺射電離 的英文怎麼說
中文拼音 [jiànshèdiànlí]
濺射電離
英文
ionization by sputtering-
Ii ) energies of the sputtered atoms vary mainly from several to several teens ev, with few atoms " energy relatively high ; the emitting positions of the sputtered atoms are close to the corresponding incident ions ( in the order of angstrom ) ; the sputtered atoms are emitted mainly normally, and few are slantways ; energy and angular distributions of sputtered atoms are influenced by the energies and incident directions of incident ions, but the angular distributions are not influenced by the incident energy very greatly
Ii ）濺射原子的能量一般集中在幾個到十幾個電子伏特的范圍內，在高能量區域也有所分佈，但數量很少;濺射原子的出射位置就在離子入射位置的附近（埃數量級） ;濺射原子的角度在垂直方向和斜射方向都有所分佈，但以垂直出射為主;濺射原子的能量、角度分佈受到了入射離子能量、角度的影響，但入射離子能量對濺射原子的出射角影響不大。In this paper based on the theory of the low energy electrons, the movement of the irons in the counter is analyzed. the theories of sputtering and secondary electron emission are discussed respectively. the irons " action and effect on the counter are putted forward
本文從低能電子發射機理入手，分析了計數管內部離子運動情況，討論了離子濺射和二次電子發射，提出了離子與計數管內壁相互作用及其對計數管的影響，給出了計數管內壁表面處理模擬圖。The main origin of the perpendicular magnetic anisotropy in tbco amorphous films is the static interaction between the aspheric distribution charges of non - s tb ions and the aberrant crystal field produced in sputtering and deposition process. the magnetic dipole interaction is in a secondary cause
對于tbco非晶垂直磁化膜而言，具有非球對稱電荷分佈的非s態離子tb與濺射沉積薄膜過程中產生的畸變晶格場之間的靜電相互作用構成了tbco非晶薄膜垂直磁各向異性的主要部分， tbco薄膜內的磁偶極相互作用構成了其次要部分。Scanning electron microscopy : after fixed in 2. 5 % glutaraldehyde made up in 0. 1 m phosphate buffer ( ph 7. 2 ), the tissue of testis was post - fixed in 1. 0 % oso4, dehydrated in a progressive ethanol solution, dried and sputter - coated with gold, then observed with kyky - 1000b microscopy and photographed
掃描電鏡樣品以2 . 5戊二醛（ ph7 . 2 ， 0 . 1m lpbs緩沖液配製）和1鋨酸雙固定，酒精系列脫水，乾燥，真空離子濺射儀噴金， kyky - 1000b型掃描電鏡觀察並拍照。The results of simulations are : i ) energies of the incident ions to the target are determined mainly by the voltage across the cathode sheath, with a majority of ions " energy vary around the sheath voltage ; ions nearly normally bombard the target ; ions mainly locate above the sputtering holes because of the influence of the magnetic field, and the incident ions mainly come from the region ; the ions undergo several collisions during transportation, but that do n ' t matter much
主要模擬結果有： ? ）入射離子到達靶面時的能量主要受到了射頻輝光放電中陰極殼層西北工業大學碩士學位論文李陽平電壓的影響，大部分離子的入射能量在陰極殼層電壓值附近，離子濺射時接近於垂直入射;射頻輝光放電受到陰極磁場的影響，等離子體中的離子主要集中在靶面濺射坑的上方，且入射離子主要來自這個區域;入射離子在輸運過程中和背景氣體分子有少量的碰撞，但影響不太大。A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. after annealing, vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained. the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5, so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation
利用離子束增強沉積設備，在ar ~ +離子束對v _ 2o _ 5靶濺射沉積的同時，用氬、氫混合束對沉積膜作高劑量的離子束轟擊，使得被氬離子轟擊后斷鍵的氧化釩分子，再被注入氫降價，然後經適當的退火，成功地制備了熱電阻溫度系數高達4的vo _ 2薄膜（國外報道值為2 - 3 ） ，並研製了單元懸空結構探測器和8 1 ， 16 1線性陣列。The application of radio frequency magneto - controlled sputtering was introduced briefly. in this research, multiferroelectric magnetoelectric lcmto with excellect crystal and electric properties which keeps substitution each other between la and ca as well as mn and ti were prepared by traditional ceramic process, and the film was prepared by radiofrequency magneto - controlled sputtering
本研究中採用傳統的陶瓷燒結方法及射頻磁控濺射技術成功制備了具有優良結晶性能和電性能的la 、 ca和mn 、 ti離子共摻的lcmto復鐵電性的磁電子材料及薄膜。We have many industry automize instruments such as temperature transmitter ( integrate temperature transmitter module ( double temperature transmitter module ), integrate temperature transmitter, track isolation temperature transmitter, hanging temperature transmitter, pressure transmitter ( expanding silicon pressure transmitter, sapphire pressure transmitter, spraying ( metal slim film ) pressure transmitter, strain pressure transmitter, ceramic resistor, capacitance pressure transmitter, 1151 and 3151 series pressure transmitter, fluid location transmitter module ( specializing for fluid location meter ), collocated electricity meter ( sigle round, double round ), signal isolation ( single round, double round ), transducer ( temperature, pressure ), display head ( showing 100 % scale, lcd fluid crystal, led digital display ), numerical instrument and so on
產品有溫度變送器（一體化溫度變送器模塊（雙支溫變模塊） 、一體化溫度變送器、導軌式隔離溫度變送器、壁掛式溫度變送器、架裝式溫度變送器） 、壓力變送器（擴散硅壓力變送器、藍寶石壓力變送器、濺射式（金屬薄膜）壓力變送器、應變式壓力變送器、陶瓷電阻、電容壓力變送器、 1151 、 3151系列壓力變送器） 、液位變送器模塊（專為液位計廠配套） 、配電器（單迴路、雙迴路） 、信號隔離器（單迴路、雙迴路） 、傳感器（溫度、壓力） 、配變送器的顯示表頭（ 100刻度顯示、 lcd液晶顯示、 led數碼顯示） 、數字儀表等工業自動化儀器儀表。By the essential control of the initial stage of - material growth, the high - quality crystal films can be obtained. by using mocvd technology, studies of some kinds of methods such as hydrogen - terminated, nitridation, plasma - assisted, growth of two stages and sputtering buffer layers have been conducted. by measuring of xrd, pl, sem and tem, and analysis of spectra of xrd, raman scatting, oa, and pl at different temperatures, we observed that the crystal quality has been improved markedly
本文利用mocvd技術，採用各種對si襯底處理的方法，如氫終止法、氮化法、等離子體轟擊方法、兩步生長法、濺射緩沖層法等進行了試驗與研究，通過x射線衍射技術（ xrd ） 、光致發光技術（ pl ） 、掃描電子顯微術（ sem ） 、透射電子顯微術（ tem ）等檢測，並對其x射線衍射光譜、拉譜光譜、吸收光譜及不同溫度下的光致發光光譜分析，發現外延晶體的生長質量得到了明顯提高。Standard practice for approximate determination of current density of large - diameter ion beams for sputter depth profiling of solid surfaces
固體表面濺射深度仿形加工用大直徑離子束的電流密度近似測定的標準規程The main purpose of this article - is to simulate the whole process of the generation and transportation of the vapor phase particles of the film in rf magnetron sputtering, which contains transportation of ions in rf glow discharge, sputtering of target and transportation of sputtered atoms, via models that are established on the basis of the physics of sheath theory for the rf magnetron glow discharge, sputtering theory and transportation theory
本論文對射頻磁控濺射中入射離子的產生和輸運、離子對靶材的濺射、濺射原子的輸運過程進行了綜合考慮，根據射頻輝光放電的陰極殼層理論、粒子的輸運理論、離子對靶材的濺射理論建立模型，進行了計算機模擬。The c - bn thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system. the c - bn / si thin film heterojunctions have been fabricated with doping into n - type ( p - type ) semiconductor by implanting s ( be ) ions into them. i - v curves of bn / si heterojunctions were obtained by the high resistance meter, c - v curves of bn / si heterojunctions were obtained by the c - v meter
使用rf射頻濺射系統，在si襯底上沉積氮化硼薄膜，用離子注入的方法在制備好的bn薄膜中分別注入s和be ，成功的制備了bn / sin - p和bn / sip - p薄膜異質結，用高阻儀測得bn薄膜表面電阻率和bn / si薄膜異質結的i - v曲線，用c - v儀測得bn / si薄膜異質結的c - v曲線。With the development of thin film science and technology, various thin film preparation techniques developed rapidly, as a result, conventional so - called filming has developed from single vacuum evaporation to many new film preparation techniques, such as ion plating, sputtering, laser deposition, cvd, pecvd, mocvd, mbe, liquid growth, microwave and mtwecr, etc., of which vacuum evaporation is the common technology for thin film preparation, because it has the distinct advantage of high quality of film deposition, good control - ability of deposition rate and high versatility
隨著薄膜科學與技術的發展，各種薄膜制備方法得到了迅速發展，傳統的所謂鍍膜，已從單一的真空蒸發發展到包括蒸鍍、離子鍍、濺射鍍膜、化學氣相沉積（ cvd ） 、 pecvd 、 mocvd 、分子束外延（ mbe ） 、液相生長、微波法及微波電子共旋（ mwecr ）等在內的成膜技術。其中電子束蒸發技術是一種常用的薄膜制備技術，它具有成膜質量高，速率可控性好，通用性強等優點。Coating metal such as cu, ni, ti, mo, w or compound coating on diamond grain ( dg ) surface by coating ( chemical, electronic plating ) and vacuum plating method ( evaporating, sputtering, ionization ) was studied
摘要採用濕法鍍（化學鍍、電鍍）或真空鍍（蒸發鍍、濺射鍍、離子鍍）方法，在金剛石表面鍍覆一層銅、鎳、鈦、鉬、鎢等金屬，或者它們的復合鍍層。The composition and structure of the films synthesized by mw - ecrpemsd technology were examined by electron probe, edx, afm, xrd, sem, moreover the corrosion resistance of films were detected by anodic polarization. furthermore, the wear resistance of films was tested by frictional wear. the relationship between properties of films and mw - ecrpemsd technology was summarized
對微波- ecr等離子體增強非平衡磁控濺射沉積工藝制備的薄膜，採用電子探針、 edx 、 aex 、 xrd 、 sem進行成分及微觀結構分析；利用陽極極化測試了薄膜的耐蝕性能；通過摩擦磨損實驗測試了薄膜的耐磨性能；總結了薄膜的特性與制備工藝的關系。分享友人