濺模 的英文怎麼說

中文拼音 [jiànmó]
濺模 英文
curtaining
  • 濺 : 動詞（液體受沖擊向四外射出） splash; spatter
  • 模 : 模名詞1. （模子） mould; pattern; matrix 2. （姓氏） a surname
  1. For vlsi, a plane surface may be approximated by depositing the interlevel dielectric by bias-sputter deposition (see section 9. 2. 4) or by using planarization.

    對于超大規模集成電路的平面狀表面，可以用偏置濺射淀積法的層間介質淀積（見924節）或用平面化工藝來近似獲得。
  2. In this paper based on the theory of the low energy electrons, the movement of the irons in the counter is analyzed. the theories of sputtering and secondary electron emission are discussed respectively. the irons " action and effect on the counter are putted forward

    本文從低能電子發射機理入手，分析了計數管內部離子運動情況，討論了離子濺射和二次電子發射，提出了離子與計數管內壁相互作用及其對計數管的影響，給出了計數管內壁表面處理模擬圖。
  3. The processes include the deposition of the waveguide film, the design and fabrication of the mask pattern, the lithography, the metal coating with a magnetic sputtering, the lift - off process for the metal mask, the dry deep etching by icp, the slicing of the wafer, the polishing of the cutting edge, the fiber - to - waveguide alignment and at last, the performance testing. some edg chip samples are fabricated

    對設計好的集成波導器件，本論文設計並試驗了器件的製作的全部工藝，包括波導薄膜的沉積，掩模的設計製作，光刻，濺射金屬薄膜，剝離法製作金屬掩模，干法深刻蝕，矽片切割，端面磨拋，波導對準和性能測試。
  4. Gully erosion, which is universal on original lands, but also the special forms, for example, hole erosion gravel erosion debris slide and debris flow, which is unusual in loess area, ( 2 ) based on a long - term fixed point experiments in proving ground of the south stackpile, the soil erosion factors have been researched quantitatively, the runoff and erosion affected factors have been made sure and the experiential models of producing water and soil have been taken in newly - constructed stage, early stage and later stage of reclamation

    確定南排土場原地貌的水蝕模數為3700 4400t km ~ 2 ? a ；在排土場新造地貌上，擊濺、面蝕、細溝侵蝕、淺溝侵蝕、沉陷侵蝕、砂礫化面蝕、土砂瀉溜和坡面泥石流等水土流失形式出現頻率和發生程度都明顯強于原地貌。 （ 2 ）以南排土場徑流試驗場長期的定位觀測為基礎，對排土場未復墾時期、復墾初期、復墾後期的土壤水蝕影響因子進行定量研究，確定了徑流和土壤水蝕的主要影響因子及其臨界值，建立了產流產沙的經驗模型。
  5. Igbt power modules, 25khz inverterfrequency, fast response time, high arc stability, almost spatter - free welding

    採用igbt模塊，逆變頻率達25khz ，動態響應速度快，穩弧性能好，焊接飛濺極小。
  6. Igbt power modules, 18khz inverter frequency, fast response time, high arc stability, almost spatter - free welding

    採用igbt模塊，逆變頻率達18khz ，動態響應速度快、穩定性能好、焊接飛濺極小。
  7. Contrasting the results of simulation and the experiment for depositing the 3 inch thin films by icds technique, the center position of substrate and the target is in a 18mm offset, the thickness distribution homogeneity is under 8 %. based on the analyses of the theoretic heat distribution for the radiant heating system, a 3 inch size radiant heater fitting for the requirement is designed and made, whose temperature difference is under 6 %

    其次，對3英寸范圍內的膜厚分佈進行了理論模擬，在此基礎上和試驗結果對比分析，發現：在倒筒靶直流濺射裝置下，如果採用一種讓基片中心和靶中心處于相對偏心距離為18mm的位置來制備3英寸薄膜，其膜厚分佈的均勻度范圍控制在8以內。
  8. He learned to mix ink so it would not spread when pressed by the type.

    他研究調制油墨的方法，使字模壓上去時，油墨不致濺開。
  9. It was found that an uniform and compact tio2 nanoparticulate film can be deposited on pet substrates in a short time, and it ' s thickness increases with the treating time. when the thickness comes to a critical value, there grows a greater size cluster on the nano - sized film. this is an interesting film growing pattern, which has never been reported

    與以往報道的生長模式不同，發現在很短的時間內即可在基底上濺射生成緻密均勻的納米膜層，其膜厚隨著時間的延長而增加，且當達到一定厚度時，又在原有納米膜層上生長出更大尺寸的團蔟結構。
  10. The results of simulations are : i ) energies of the incident ions to the target are determined mainly by the voltage across the cathode sheath, with a majority of ions " energy vary around the sheath voltage ; ions nearly normally bombard the target ; ions mainly locate above the sputtering holes because of the influence of the magnetic field, and the incident ions mainly come from the region ; the ions undergo several collisions during transportation, but that do n ' t matter much

    主要模擬結果有： ? ）入射離子到達靶面時的能量主要受到了射頻輝光放電中陰極殼層西北工業大學碩士學位論文李陽平電壓的影響，大部分離子的入射能量在陰極殼層電壓值附近，離子濺射時接近於垂直入射;射頻輝光放電受到陰極磁場的影響，等離子體中的離子主要集中在靶面濺射坑的上方，且入射離子主要來自這個區域;入射離子在輸運過程中和背景氣體分子有少量的碰撞，但影響不太大。
  11. Study of hydraulic model experiment of lining protection with slag splashing in lbe

    復吹轉爐濺渣護爐水模試驗研究
  12. The hillslope erosion processes include soil separation, sediment transport and sediment precipitate, which these three process result from the rainfall splash erosion and runoff erosion. to study and analyze the happening and developing conditions of hydraulic, soil and terrain, and the mechanisms of transitions and influences of these processes each other is the prerequisite to set up physical model of soil erosion

    坡面侵蝕過程包括降雨濺擊和徑流沖刷引起的土壤分離、泥沙輸移和沉積3大過程，研究和分析這些過程發生、發展的水力、土壤、地形條件以及各過程間相互轉化、相互影響的機理，是建立土壤侵蝕物理模型的前提條件。
  13. Perhaps he imitated sounds he heard all around him : water splashing, bees humming, a stone falling to the ground

    也許他模仿他周圍所聽到的一切的聲音：水的飛濺聲、蜜蜂的嗡嗡聲、石頭的落地聲。
  14. We have many industry automize instruments such as temperature transmitter ( integrate temperature transmitter module ( double temperature transmitter module ), integrate temperature transmitter, track isolation temperature transmitter, hanging temperature transmitter, pressure transmitter ( expanding silicon pressure transmitter, sapphire pressure transmitter, spraying ( metal slim film ) pressure transmitter, strain pressure transmitter, ceramic resistor, capacitance pressure transmitter, 1151 and 3151 series pressure transmitter, fluid location transmitter module ( specializing for fluid location meter ), collocated electricity meter ( sigle round, double round ), signal isolation ( single round, double round ), transducer ( temperature, pressure ), display head ( showing 100 % scale, lcd fluid crystal, led digital display ), numerical instrument and so on

    產品有溫度變送器（一體化溫度變送器模塊（雙支溫變模塊） 、一體化溫度變送器、導軌式隔離溫度變送器、壁掛式溫度變送器、架裝式溫度變送器） 、壓力變送器（擴散硅壓力變送器、藍寶石壓力變送器、濺射式（金屬薄膜）壓力變送器、應變式壓力變送器、陶瓷電阻、電容壓力變送器、 1151 、 3151系列壓力變送器） 、液位變送器模塊（專為液位計廠配套） 、配電器（單迴路、雙迴路） 、信號隔離器（單迴路、雙迴路） 、傳感器（溫度、壓力） 、配變送器的顯示表頭（ 100刻度顯示、 lcd液晶顯示、 led數碼顯示） 、數字儀表等工業自動化儀器儀表。
  15. For vlsi, a plane surface may be approximated by depositing the interlevel dielectric by bias - sputter deposition ( see section 9. 2. 4 ) or by using planarization

    對于超大規模集成電路的平面狀表面，可以用偏置濺射淀積法的層間介質淀積（見9 2 4節）或用平面化工藝來近似獲得。
  16. Recently, various magnetron sputtering lines for depositing thin films on large - size glass substrates developed rapidly and attracted significant attention

    摘要近年來，各種工業生產規模的玻璃基片大平面磁控濺射生產線發展迅速，令人關注。
  17. Manufactures pressure sensors, transducers, load cells, accelerometers, force sensors and strain gages from stock. specialist in micro - miniaturization and applications of semiconductor, thin film, metallic foil and hybrid circuit technologies for the measurement of acceleration, force, and pressure in a multitude of environments

    -提供薄膜制備微粉制備真空冶金分子束外延磁控濺射化學氣相沉積電子束鍍膜激光鍍膜甩帶機磁控電弧爐空間環境模擬等設備
  18. Hard sphere model in sputtering theory

    濺射理論中的硬球模型
  19. The main purpose of this article - is to simulate the whole process of the generation and transportation of the vapor phase particles of the film in rf magnetron sputtering, which contains transportation of ions in rf glow discharge, sputtering of target and transportation of sputtered atoms, via models that are established on the basis of the physics of sheath theory for the rf magnetron glow discharge, sputtering theory and transportation theory

    本論文對射頻磁控濺射中入射離子的產生和輸運、離子對靶材的濺射、濺射原子的輸運過程進行了綜合考慮，根據射頻輝光放電的陰極殼層理論、粒子的輸運理論、離子對靶材的濺射理論建立模型，進行了計算機模擬。
  20. ( 3 ) the simulation results of rare gas ion ( argon is used here ) sputtering metal ( al is used here ) to deposit films, which are in good agreement with the fundamental experimental results

    （ 3 ）運用模擬程序模擬了惰性氣體（ ar ）離子對金屬靶（ al ）濺射成膜的過程，模擬結果符合一般的實驗結果及其規律。
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