濺錫 的英文怎麼說
中文拼音 [jiànxí]-
J. r. stevens et al., “ electrochromism of wo3 - based films in contact with a solid li - doped siloxane elastomer electrolyte, ” applied optics, 26, pp. 3489 - 3490, 1987
鄭耀爵， 「以離子束濺鍍法制備氧化銦錫薄膜之光學、電學及可靠性質之研究， 」國立成功大學，碩士論文， 2003 。Wuxi nakano machinery co., ltd. and japan - field technology, the development of a new type of closed turntable polishing concrete slabs. polished tiles from the radically changed the cooling water production accelerated, workers unable to operate close to the phenomenon ; supported by tanks under the workpiece table, it will not only compensate for the loss millstone, but stable grinding force. different uniform surface quality products ; with the grinding process workpiece turntable and rotating products
無錫中野機械有限公司引進日本技術，全新開發的轉臺型封閉式混凝土地磚磨光機，從根本上改變了磨光地磚生產中冷卻水飛濺，操作工人無法靠近的現象工件轉臺由下油缸支承，不僅能及時補償磨石的損耗，而且磨削力穩定不變，不同產品的表面質量均勻一致磨削過程中產品隨著工件轉臺而轉動，避免了其它型式磨光地磚生產中產品不動而帶來的同一產品表面質量不均的現象。It adopts the intermediate frequency power ; it not only can plate single films or multilayer membrane, such as titanium nitrides, titanium carbide, zirconium nitrides, chromium nitride, titanium, nickel, chromium and copper etc. but also can plate the ito, al2o3, sio2, tio2 and zro etc. furthermore, it can plate multilayer membrane after being equipped with multi - targets with top grade quality and fast speed, as well as advantages of other plating methods ; therefore it is one super - hard membrane equipment with excellent performance
採用先進的中頻電源，濺射速度快，不但可以鍍制氮化鈦碳化鈦氮化鋯氮化鉻及鈦鎳鉻銅金銀等等單一膜層或復合膜層，而且可以鍍制銦錫合金ito氧化鋁al2o3二氧化硅sio2氧化鈦tio2氧化鋯zro等等膜層，另外其配置多靶可以鍍制多層膜，不但鍍制膜層細膩而且鍍制速度非常快，兼有其他鍍法的優點，所以是一種性能非常優良的鍍制超硬膜設備。The processing parameters of preparing plzt electro - optic films were 400 of substrate temperature, 100w of sputtering power, 1 : 6 ratio of oxygen to nitrogen and 650 of annealing. the processing parameters of preparing sno2 film were room temperature of substrate temperature, 200w of sputtering power, 1 : 2 ratio of oxygen to nitrogen and 600 of the annealing temperature
制備plzt電光薄膜的最佳工藝參數為:襯底溫度400 ，濺射功率100w ，氧氬比為1 : 6 ，退火溫度為650 ;而制備二氧化錫透明電極的最佳工藝參數為:襯底溫度室溫、濺射功率200w 、氧氬比為1 : 2 、退火溫度為600 。Among these methods, magnetron sputtering is the most widely used technique for preparing thin films, owing to its high deposition rate and good uniformity etc. ito films were prepared by rf and dc magnetron sputtering in pure argon gas atmosphere, using in2o3 and in target mixed with sno2 ( 10wt % ) and sn ( 7wt % ) respectively
其中磁控濺射工藝具有沉積速率高均勻性好等優點而成為一種廣泛應用的成膜方法。本研究課題分別以氧化銦錫靶和銦錫合金靶為靶材，採用射頻磁控濺射和直流反應磁控濺射工藝在氬氣氣氛中沉積ito薄膜。靶材中sno _ 2和sn的摻雜重量比例分別為10和7 。分享友人