熔化分界面 的英文怎麼說
中文拼音 [rónghuàfēnjièmiàn]
熔化分界面
英文
melting interface- 熔 : 動詞(熔化) melt; fuse; smelt
- 分 : 分Ⅰ名詞1. (成分) component 2. (職責和權利的限度) what is within one's duty or rights Ⅱ同 「份」Ⅲ動詞[書面語] (料想) judge
- 界 : 名詞1 (相交的地方; 劃分的界限) boundary 2 (一定的范圍) scope; extent 3 (按職業、工作或性別等...
- 面 : Ⅰ名詞1 (頭的前部; 臉) face 2 (物體的表面) surface; top 3 (外露的一層或正面) outside; the ri...
- 熔化 : melt; smelt; meltdown; fusion; fusation; diatexis; eliquation; run; melting; smelting
- 界面 : [物理化學] interface; boundary; limiting surface
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The maximal power outputs of 37. 0 mw / cm2 and 30. 0 mw / cm2 for the p - and n - type laminated materials respectively at the temperature difference 490 have been experimentally obtained, which are about 2. 5 and 3. 0 times those of - fesi2. chemical analyses show that the interface failure between the bridge alloy and the semiconductor bi2te3 results mainly from the eutectic mixtures with low melting point and brittle compounds formed during welding and long time annealing at 190. it is found that the electrical properties of a laminated structure are mainly controlled by the wettability of the bridge alloy on the semiconductor surface
發現: 1 )疊層材料具有明顯優于均質材料的熱電性能,在490溫差下, p -型和n -型疊層材料的最大輸出功率分別達到37 . 0和30 . 0 ( mw / cm ~ 2 ) ,是同類型均質- fesi _ 2的2 . 5和3倍; 2 )在焊接過程和190長時間退火處理過程中,焊接過渡層合金和基體半導體(特別是bi _ 2te _ 3 )之間存在明顯的元素相互擴散,從而在過渡層中形成一些低熔點共晶體和脆性化合物,這是導致疊層材料破壞的主要原因; 3 )焊接過渡層合金與半導體基體之間的潤濕性是影響界面層電性能的主要因素。1. the splitting from the binding interface of cuw / crcu roots from the rich cr and the oxidation of the binding interface, which leads to the higher thermal resistance in binding interface than normal, and the thermal stress enhanced. the extruded cu is suggested to instead of casting cu
( 1 )斷裂是由於原材料鑄態的crcu中c :質點大於熔滲的孔隙而沉積在界面上,同時在有氧源存在的條件下,結合面氧化,致使結合面結合不好,界面熱阻升高, cuw與crcu部分的膨脹不同,應力集中,燃弧后斷裂。The forming - nucleus drive power could form numerous little crystal nucleus under natural melting temperature. the formation of tic particles in the melt could be divided into two phases which was forming - nucleus and growth. the forming mechanism of tic was : melting ti first surrounded c, then ti melting in the alloy and c formed a complicated reaction mesosphere on the carbon surface
根據熱力學及動力學分析,認為在碳顆粒界面處tic的形核率很高,形核驅動力足以在正常的熔煉溫度下形成眾多的小晶核;熔體中tic顆粒的合成可分為形核與長大兩個階段,其形核機制為:首先活性ti原子包圍c ,溶入合金中的ti與c在碳表面形成一復雜反應中間層,隨著反應進行, ti和c顆粒不斷減少,生成的tic不斷彌散分佈於熔體中;其長大過程伴隨著tic顆粒的相互堆砌、聚集和形態規則化。The phase composition, microstructure and the interface characteristic were all analyzed through xrd, sem, optical microscope, eds, etc. the results are listed as follows : the growth mechanism of al - 5zn - 10si alloy is that molten aluminum keep a continuous oxidation and growth in the way of cell - shape through the micro - channels which transfer the molten aluminum to the reaction front
採用xrd 、 sem和光學顯微鏡以及能譜分析法,研究分析了al _ 2o _ 3 sic ni al - si合金多相陶瓷基復合材料的相組成及其界面特徵。研究發現: al - 5zn - 10si合金原位氧化生長是合金熔體通過氧化體中的微觀通道傳輸到氧化生長體前沿繼續氧化,並以胞狀形式向前生長。分享友人