熱擴散區 的英文怎麼說

中文拼音 [rèkuòsǎnqū]
熱擴散區 英文
thermal diffusion zone
  • 擴 : 動詞（擴大） expand; enlarge; extend
  • 散 : 散動詞1. （由聚集而分離） break up; disperse 2. （散布） distribute; disseminate; give out 3. （排除） dispel; let out
  • 區 : 區名詞（姓氏） a surname
  1. Instead of being forced out of tropical regions as they travelled poleward, they accumulated there

    它們非但不是被迫離開熱帶地區，相反，它們主動向兩極擴散，並在那兒發展壯大。
  2. In this paper, three unique models were designed to research atom diffusion at interface, contacting line and joining point under bpec heating and compare with it under radiation heating in order to find out if bpec speed atom diffusion. the first model was aimed to research atom diffusion at interface under bpec heating. experiment condition of bpec diffusion welding sheet cu and ni : direct diffusion welding, at a pressure of l0mpa, welded at 750 ~ 900, with heat rate of 200 ~ 400 / min for 10mm, on / off of 6 / l ~ 48 / 8, with die or not, vacuum of 6pa

    本文設計出三種樣品預構件，研究脈沖大電流加熱條件下片狀材料、線狀材料和球形顆粒之間的原子擴散過程，弄清脈沖大電流加熱條件下原子擴散與一般燒結和焊接過程中原子擴散的區別，以證實特殊的電場和磁場是否對原子的擴散有推動作用，揭示脈沖大電流加熱條件下原子的擴散過程，探索脈沖大電流熱加工技術快速高效的原因。
  3. Laser induced diffusion is a technology that dope the impurities into a certain region of semiconductor by a focused laser. it has the advantages of “ low temperature processing ” and ” direct writing ”, and it is promising to use this technology in the fabrication of monolithically optoelctronic integrated circuits ( oeics ) to solve the incompatibility problem between optoelctronic and electronic components

    激光誘導擴散是用聚焦的激光束局域加熱半導體基片，將雜質以擴散的方式摻入到特定區域並且達到一定要求的一種技術，具有「低溫處理」 、 「直接寫入」 、 「局域升溫」等獨特優點，可有效解決單片光電集成器件（ oeics ）中光、電兩部分的工藝兼容這一難題。
  4. Applying the heat dissipation technique to study the sap flow of pinus elliottii in the red earth area of subtropical china

    應用熱擴散技術對亞熱帶紅壤區濕地松人工林樹干邊材液流的研究
  5. At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency

    在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。
  6. Based on the analysis of gas - solid multiphase catalytic reaction, the chemical reaction model is established. when the reaction is controlled by the chemical dynamic, the reaction rate is introduced by consideration of the adsorption and desorption effects. when the reaction is controlled by mass transfer, the diffusion coefficient is established which can present the flow rate increases in small reynolds domain ; for the internal diffusion, the internal diffusion coefficient is derived, and then the internal diffusion is coupled with chemical reaction to represent the phenomenon that the diffusion and the chemical reaction occur cocurrently

    本文在考慮催化轉化器載體內發生的傳熱傳質現象的基礎上，建立了催化轉化器的一維單孔道和三維多孔道傳熱傳質模型;在分析載體內以氣-固多相催化反應為特點的工作機理的基礎上，建立了催化轉化器的化學反應模型:當催化轉化處于化學動力學控制區時，引入了考慮吸附、表面反應和脫附的表面化學反應速率公式，當催化轉化處于質量輸運控制區時，引入了決定外擴散能力的擴散系數公式和和決定內擴散速率的內擴散系數公式，並與化學反應速率相耦合，得出由擴散過程決定的化學反應速率公式。
  7. The result of experiment showed that the reaction between ti and c is a thermodynamic course, when 2 wt % mg is added to melt, it can restrain the formation of fragility phase al3ti, and gained al matrix composite which contained tic reinforced particles only. because mg reacts with the forms a micro - high temperature field around the oxide around the graphite particles and the oxygen gas which is brought by the immersion bell, and the reaction gives out a lot of heat energy, thus forms many high micro - fields in melt, which prompt the reaction between the al and ti

    加入適量的mg （ 2wt ）可以抑制tic al復合材料中的脆性相al _ 3ti的產生，生成僅含tic的鋁基復合材料；由於活化劑鎂在體系中與石墨顆粒周圍的氧化物、以及外來的氧反應放熱，在熔體中形成微高溫區，促進al - ti反應，同時， al - ti反應也是放熱反應，因此體系中的內能急劇增大，促使al _ 3ti分解以及ti朝c顆粒擴散，縮短反應的孕育時間。
  8. The mechanism of hydrothermal process has also been studied. under the hydrothermal conditions, a small quantity of cu2 + in solutions were carried to the copper lattice due to the diffusion and convection, then the cu2 + move to the positions of lattice defect. the crystallization reaction happened and copper powders got a good crystallinity and an excellent antioxidation

    在穩定的水熱條件下，由於擴散、對流或強迫流動引起少部分溶解在溶液中的銅離子向銅晶體表面附近的區域輸運，在晶面某一位置上被吸附，並通過表面擴散，順著臺階運動到扭折位置，發生結晶反應。
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