熱核等離子體 的英文怎麼說

中文拼音 [rèhéděnglízitǐ]
熱核等離子體 英文
thermonuclear plasma
  • 核 : 核構詞成分。
  • 等 : Ⅰ量詞1 （等級） class; grade; rank 2 （種; 類） kind; sort; type Ⅱ形容詞（程度或數量上相同） equa...
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 體 : 體構詞成分。
  • 熱核 : thermonuclear
  • 離子 : [物理學] ion
  1. In the thermal fusion device, the materials of the plasma facing components are expected to have high thermal resistance and outstanding heat conductivity. using a single kind of material, however, can not meet the above two requirements at one time. therefore, the joining technique is regarded as a proper approach to improve the properties of the conventional materials

    在熱核聚變反應裝置中關鍵結構件「面向等離子體」元件要求材料具備良好的耐高溫性和導熱性，而現有的單一材料不能同時滿足該要求，因此，通過連接技術將現有材料進行改善是合適的。
  2. So its naissance brings a lot of hope and promotion to application and deploitation of milimeter and submilimeter - wave. because of gyrotron, s superiority of high peak power and average power among many known milimeter and submilimeter - wave gyrodevices, it has been paid much respect in the world for application in many areas such as plasma heating, rf accelerator, millimeter radar, dew and so on

    由於迴旋管具有在毫米、亞毫米波段其它器件無可比擬的高峰值功率、高平均功率的優越性，因此在受控熱核聚變等離子體的迴旋管加熱（ ecrh ） 、電子高能rf加速、雷達系統、通信系統以及定向武器（ dew ）等方面都有著廣闊的應用前景。
  3. Gyrotron has the superiorities, high peak power and high average power. so gyrotron is vastly applied in many areas, such as plasma heating, controlled thermonuclear fusion ( ctf ), radar, communication, electron countermeasure

    迴旋管具有在毫米、亞毫米波段其他器件無可比擬的高峰值功率、高平均功率的優越性，因此在等離子體加熱、受控熱核聚變、雷達、通信及電子對抗等方面都有著廣闊的應用前景。
  4. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  5. With the development of space technology and the new - material. the study of the thermal plasma is increased, yet the arc is the key question of the thermal plasma

    近年來，隨著航天技術的發展和新型材料的出現，人們對熱等離子體的研究不斷加深，而電弧問題是熱等離子體的核心問題，因此，人們對電弧的研究也不斷深入。
  6. In this paper ， first, the author drew some important conclusions by analyzing several technical factors and experimental conditions which would have great influence on the quality of diamond thin films during mpcvd process ， including gas proportion ， the power of microwave ， the plasma ' s location, the nucleation technique, etc. finally ， the author has successfully deposited nanocrystalline diamond thin films with 300nm crystal particles on the slick surface of silicon by using ch4 / h2 gases in the mpcvd system ， and the nanocrystalline diamond thin films was proved to have good field emission performance. all these researches will make the foundation for the field emission cathode of diamond films

    本論文中，作者分析了mpcvd方法中氣源成分比、微波功率、等離子體球的位置、成核技術等各種工藝條件對金剛石薄膜質量的影響，並總結得到了一些有意義的結論；同時，在自行研製的mpcvd沉積系統上，於4 - 7kpa 、 1000左右的熱力學條件下，採用ch4 / h2氣源氣氛在光滑的硅襯底上制備出了晶粒尺寸在300納米以下的納米晶金剛石薄膜，測試得到了較好的薄膜場致電子發射性能，為金剛石薄膜場致發射冷陰極的研究工作打下了實驗基礎。
  7. Although we only worked on two toy models, the methods and some of the results can be used to study medium effects in more realistic systems, such as nuclear matter ( hadronic dynamic models ), electromagnetic plasma ( hot qed ) and qgp ( hot qcd )

    雖然_ 6 ~ 3和標量qed是兩個理想模型，但是其研究方法和某些結果亦可運用於實際的研究系統中。比如，核物質（強子動力學模型） 、電磁等離子體（熱qed ）和夸克膠子等離子體（熱qcd ） 。
  8. We combined the cvd technique with the pecvd technique by adding a dc or rf electric field to the reacting region of cvd device, and improved the inputting method of reaction gases, then had executed a diamond film growth system. the advantages of our system are : ( 1 ) reaction power, which can enhance the density of the plasma in the reacting region, is supplied with the heat filament and the dc electric field, or with the heat filament and the rf electric field both of them can be controlled precisely and they are complementary to each other

    將熱絲cvd技術與pecvd技術相結合，在薄膜的成核和生長階段分別給反應區再施加一個直流和射頻電場，同時改進反應氣體的進氣方式，製成具有下列兩大特點的金剛石薄膜生長系統： （ 1 ）反應功率由熱絲和直流電場或熱絲和射頻電場共同提供，兩者互相補充，可精確控制，大大提高了反應區的等離子體密度； （ 2 ）能精確控制反應氣體的分佈、流量及流速。
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