熱電半導體 的英文怎麼說

中文拼音 [rèdiànbàndǎotǐ]
熱電半導體 英文
thermoelectric semiconductor
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 半 : Ⅰ數詞1 （二分之一） half 2 （在 中間的） in the middle; halfway 3 （比喻很少） very little; the l...
  • 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
  • 體 : 體構詞成分。
  1. Cubic boron nitride ( cbn ) is a synthesized wide - band - gap iii - v compound semiconductor and has lots of excellent physical and chemical properties. it has been attracted a nice bit of attention for years because of its application in mechanics, calorifics, optics and electronics

    立方氮化硼（ cbn ）是一種人工合成的寬帶隙-族化合物半導體材料，它有許多優異的物理化學性質，在力學、熱學、光學、電子學等方面有著非常誘人的應用前景，多年來一直吸引著國內外眾多研究者的興趣。
  2. Heat sink for power semiconductor device part 2 : measuring method of thermal resistance and input fluid - output fluid pressure difference

    電力半導體器件用散熱器第2部分：熱阻和流阻測試方法
  3. Selecting guide of heat sink for power semiconductor device

    電力半導體器件用散熱器選用導則
  4. As silicon is the most important semiconductor material in micro - electronic field, one - dimensional nano - structures of silicon play an important role in the fields of device assembly, nanometer - size magnetic device, photoelectronics, and have drawn wide interest in the world

    摘要作為微電子領域最重要的半導體材料，硅的一維納米結構在器件組裝、納米尺寸磁性器件、光電子等領域具有重要的作用，已經成為國際上材料科學研究的一個熱點。
  5. Thermistors are semiconductor devices whose resistance varies with temperature.

    熱敏電阻是一種半導體元件，它的電阻隨溫度而變化。
  6. Indium stannum oxide ( ito ) as semiconductor have caused a great deal of interest due to their prominent electro - optical behavior. ito has high prominent transmittance, high infrared reflectance, good electrical conductivity, ito applied as gas sensors, photovoltaic devices, heat reflecting mirrors, solar cells, flat panel displays, liquid crystal displays, electroluminescent, devices and organic light - emitting diodes ( oled ) etc. although preparations and applications of ito films have been studied deeply. nano - ito composites hardly studied

    氧化銦錫（ ito ）是一種高簡並的n型半導體，由於具有導電性，可見光高透過率，紅外反射性，穩定的化學性，被廣泛應用於熱反射建築玻璃、抗靜電塗層，太陽能電池，熱發射鏡，平板顯示器和液晶顯示屏，傳感器，有機光致二級管（ oled ）等方面，國內外對高質量的ito薄膜的制備和應用進行了深入的研究，但是很少有ito納米粒子與高分子材料復合的報道。
  7. Progress of semiconductor thermoelectric materials

    半導體熱電材料研究進展
  8. Gaas crystal is a kind of iii - v group compound semiconductor material with good electrical performance. the semiconductor devices and integrated circuit ( ic ) fabricated on gaas substrate have such advantages of hign - speed information processing that they have drawn the researcher ' s attention

    Gaas晶體是一種電學性能優越的-族化合物半導體材料，以其為襯底製作的半導體器件及集成電路，由於具有信息處理速度快等優點而受到青睞，成為近年來研究的熱點。
  9. Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices

    3c - sic被譽為最有潛力的寬禁帶半導體材料，具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點，是高溫、高頻、高功率半導體器件的首選材料。
  10. Outline dimensions of extruded heat sink for power semiconductor devices

    電力半導體器件用型材散熱體.外形尺寸
  11. Heat sink for power semiconductor device part 1 : casting kind series

    電力半導體器件用散熱器第1部分：鑄造類系列
  12. Heat sink for power semiconductor device part 3 : insulators and fasteners

    電力半導體器件用散熱器第3部分：絕緣件和緊固件
  13. Laser induced diffusion is a technology that dope the impurities into a certain region of semiconductor by a focused laser. it has the advantages of “ low temperature processing ” and ” direct writing ”, and it is promising to use this technology in the fabrication of monolithically optoelctronic integrated circuits ( oeics ) to solve the incompatibility problem between optoelctronic and electronic components

    激光誘導擴散是用聚焦的激光束局域加熱半導體基片，將雜質以擴散的方式摻入到特定區域並且達到一定要求的一種技術，具有「低溫處理」 、 「直接寫入」 、 「局域升溫」等獨特優點，可有效解決單片光電集成器件（ oeics ）中光、電兩部分的工藝兼容這一難題。
  14. Silicon carbide is becoming the most promising semiconductor material for high temperature, high frequency and high power devices because of its superior properties such as wide band gap, high breakdown field, high electronics saturation drift velocity, and high thermal conductivity

    Sic材料由於具有寬禁帶、高臨界擊穿電場、高飽和電子漂移速度、較大的熱導率等優良特性，因此成為製作高溫、高頻、大功率器件的理想半導體材料。
  15. Featured by wide band gap, high breakage electric field, high electron mobility, low dielectric constant, strong irradiation proof and excellent chemical stability, silicon carbide ( sic ), viewed as one of the most promising wide band gap semiconductors, is widely utilized in optoelectronic devices, high frequency and large power, high temperature electronic devices

    被譽為最有潛力的寬禁帶半導體材料一sic ，因其具有禁帶寬度大、擊穿電場高、熱導率大、電子飽和漂移速度高、介電常數小、抗輻射能力強、良好的化學穩定性等優異的特性，被廣泛地應用於光電器件、高頻大功率、高溫電子器件。
  16. The chip of microbridge structure thermocouple type microwave power sensor is designed by using seeback domino offect of thermocouple. ta2n of relatively low resistor - temperature coefficient and si of relatively high thermoelectric power seebeck coefficient are used as thermocouple materials in the chip

    微梁結構熱偶微波功率傳感器晶元就是利用熱偶的塞貝克效應設計的，晶元選擇具有低電阻溫度系數的ta2n和具有高熱電系數的半導體單晶si作為熱偶材料。
  17. Organic semiconductor thermistor

    有機半導體熱敏電阻器
  18. Dynamic analysis on temperature distribution inside semiconductor thermoelectric modules under low temperature

    低溫半導體熱電堆內部溫度分佈的動態特性分析
  19. Sheathed thermocouple as temperature sensor consist oftwo dissimilar and qualified conductor or semiconductor welded together at both ends one terminal as measaring junction, another as reference junction, temperature can be measured depend upon

    由兩種不同但符合一定的導體或半導體熱電極，將其一端焊接作為測量端，另一端為參考端，利用兩端溫差與熱電
  20. The studies in existence showed that the solid solutions which based with mg2si and doped with other elements are good thermoelectric semiconductors working at mid - temperature ( 400 - 700k )

    已有的研究表明，以mg _ 2si為基、通過摻雜得到的固溶體是優秀的中溫區（ 400 - 700k ）熱電半導體材料。
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