熱電子效應 的英文怎麼說

中文拼音 [rèdiànzixiàoyīng]
熱電子效應 英文
thermoelectronic effect
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 效 : Ⅰ名詞（效果; 功用） effect; efficiency; result Ⅱ動詞1 （仿效） imitate; follow the example of 2 ...
  • 應 : 應動詞1 （回答） answer; respond to; echo 2 （滿足要求） comply with; grant 3 （順應; 適應） suit...
  • 電子 : [物理學] [電學] electron
  • 效應 : [物理學] effect; action; influence
  1. The effect is caused by the escape of electrons from the hot filament.

    這個效應是由於電子從熱燈絲逸出而引起的。
  2. The electronic temperature, intensities of all lines and continuous spectra gradually increased with the increment of laser energy, and they got to maximum at different laser energy. our results of copper and aluminum show that there are possibly different thresholds of laser energy to electronic temperature and intensities of emission spectra of laser ablated plasma. at the different environmental gas pressure, spatial emission intensity distribution is explained by the competition among " heat reservoir effect ", " confined effect " and " s hadow effect "

    認為cu等離子體羽的發光機制是由電子與粒子的碰撞傳能、電子與離子的復合形成的；隨激光能量的增加， cu等離子體特徵輻射（分立譜） 、連續背景輻射（連續譜） 、電子溫度都出現最大值；結合對al的實驗結果說明：激光燒蝕金屬產生的等離子體，其特徵輻射、連續輻射、電子溫度可能都存在一定的能量閾值；背景氣壓對激光燒蝕等離子體譜線的影響，其機理可以認為是「熱庫效應」 、 「約束效應」及「陰影效應」相互競爭的綜合結果。
  3. Higher purity copper cathode - determination of tin content - zeeman effect electrothermal atomic absorption spectrometric method

    塞曼效應電熱原子吸收光譜法測定錫量
  4. Higher purity copper cathode - determination of nickel content - zeeman effect electrothermal atomic absorption spectrometric method

    塞曼效應電熱原子吸收光譜法測定鎳量
  5. Higher purity copper cathode - determination of iron, cobalt and lead contents - zeeman effect electrothermal atomic absorption spectrometric method

    塞曼效應電熱原子吸收光譜法測定鐵鈷鉛量
  6. Higher purity copper cathode - determination of chromium, manganese and cadmium contents - zeeman effect electrothermal atomic absorption spectrometric method

    塞曼效應電熱原子吸收光譜法測定鉻錳鎘量
  7. The degradation of the electrical characteristics in sic pn junctions irradiated by neutron is attributed to the recombination centers and the electric field effect on the thermal emission of traps within the depletion region. the relationship of the ideality factor to the applied voltage is theoretically studied

    提出了中子輻照下sicpn結電特性退化的新的理論， pn結耗盡區中的輻照陷階在耗盡區電場的作用下熱發射效應得到加強，從而導致pn結正偏和反偏時的復合電流和產生電流的改變。
  8. As a high - power twt, we consider the relativistic effect of the solid beam. the numerical results are given in terms of the small signal gain curve and slow - wave ration curve

    作為大功率的行波管，我們考慮了電子注的相對論效應，數值求解「熱」色散方程，得到脊加載盤荷波導幾何參數和電子注參量與小信號增益的關系。
  9. Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet

    基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高
  10. Account for the high electrical field induced from the high applied voltage relative to small dimension device, the mechanism of hot - carrier generation is analysed, the si - h bond broken model for hot - carrier injection and interface states generation is deduced and the substrate current model is developed

    基於mosfet偏壓不能按比例縮小所導致的高電場，對mosfet的熱載流子產生機理進行了分析，導出了熱載流子注入所引起的界面態的si - h健斷裂模型，並建立了表徵器件熱載流子效應的襯底電流模型。
  11. We have more interest in benzofuroxans with amino and nitro substituents because the effect of pushing electron of amino group increases the bond energy of c - no2, and there are strong intramolecular and intermolecular hydrogen bonds between amino and nitro group. these hydrogen contacts can make the molecular structure more stability. so aminonitrobenzodifuroxan may have good heat resistance and low impact sensitivity

    所以我們對氨基硝基苯並氧化呋咱這類炸藥更為關注，因為氨基的推電子效應使c - no _ 2鍵能增強，且氨基的氫原子與硝基的氧原子間形成強的分子內和分子間氫鍵，更增強了分子的穩定性，所以它們可能獲得優良的熱安定性和較低的感度。
  12. In the framework of the long - range interaction, we study the interfacial effects on the pyroelectric and dielectric susceptibility of a ferroelectric bilayer for the first time. we find that the quantum effect can lead to the disappearance of some of the peaks of the pyroelectric and susceptibility of the bilayer

    我們首次在長程相互作用的框架內，考察了界面對雙層膜的熱電、介電等物理性質的影響，且量子效應的增強會導致鐵電雙層薄膜的熱電系數和介電極化率的某些峰的消失。
  13. The membrane properties were found to be dependent upon the content of styrene. the membrane physic - chemical properties compare to nafion 117 except that their chemical stability has to be further improved to make them acceptable for practical use in the proton exchange membrane fuel cell. the proton transport through the membrane follows the " liquid - like " proton conductivity mechanism y and the water balance is important for the working condition of the fuel cell

    對磺化膜的研究分析表明：膜的性能參數如離子交換容量、吸水率、水合系數、形體穩定性、導電性能、化學與熱穩定性等依賴于膜中苯乙烯含量，且接枝苯乙烯相互間的位阻效應對膜性能影響很大；膜的性能可與nafion膜相比較；質子在膜中的傳導遵循「似液體」質子傳導機理；電滲析與擴散作用使膜保持水平衡。
  14. In order to investigate the effect of high - field hot - carrier on devices and circuits, the electrical stress experiment is carried out with 1. 2 n m, 1. 0 n m and 0. 8 u m channel length home - made mosfet ' s by the monitor system with ate and cat technology. by using the fresh and degraded experiment data, bsim2 model parameters are extracted

    為了分析研究高場熱載流子效應對器件和電路特性可靠性的影響，採用自動測試與cad技術相結合的監測系統，對國內溝道長度1 . 2 m 、 1 . 0 m和0 . 8 m的mosfet進行了電應力退化實驗，並根據實驗結果提取了退化前後器件的bsim2模型參數。
  15. This paper also presented the structure of soi bjmosfet and discussed and analyzed the advantages of this device by comparing with the bulk bjmosfet. its advantages are as fellow : no latch - up effect, better capability of resisting invalidation, much smaller parasitic capacitance, weaker hot - carrier effect and short - channel effects, and simpler technics, and so on

    通過與體硅bjmosfet比較，討論和分析了soibjmosfet的優點：無閂鎖效應、抗軟失效能力強、寄生電容大大降低、熱載流子效應減弱、減弱了短溝道效應、工藝簡單等。
  16. The microstructure observation in the microfissures suggests the liquation microcrack results from grain boundary liquation by constitutional liquation of mc carbides and formation of continuous and or semi - continuous low melting liquid films, however, the occurrence of the solid state microcracks can be attributed to the effect of ultrafast transit thermal shock introduced by high energy electron beam

    液化裂紋起源於mc碳化物的組份液化而形成的晶界連續或半連續的低熔點共晶液化膜，固相裂紋形成的則是高能電子束流的快速瞬態熱沖擊效應的直接結果。
  17. The device i - v characteristic curves " shangqiao at high temperature while not at low temperature shows the hot electrons effect at high temperature result in this

    高溫下器件i - v特性曲線有上翹現象出現，低溫情況下未觀察到此現象，這是由於高溫下的熱電子效應所致。
  18. We consider the solid electron beam. the hot dispersion relation including the electron beam space charge effect is obtained in this paper, by series of propagating with using of the boundary condition and combining with the field matching method

    考慮實心電子注，分區求出各區慢電磁波的場方程，然後利用邊界條件，用嚴格的場匹配方法，經過一系列的推導得到了考慮空間電荷效應的「熱」色散方程。
  19. It is shown that substrate current is not the good indication of hot carrier effect in sde structures and using a threshold degradation criterion to characterize device degradation is not suitable for sde structures. third, the effect of the sde implant dose on the hot carrier immunity is thoroughly studied

    在此基礎上，指出採用峰值襯底電流評估sde結構器件可靠性的局限性，以及在採用i - v特性測試方法研究sde結構器件的熱載流子效應時，閾值電壓作為退化判據所存在的問題。
  20. First, the scaling limitation and relative reliability problems are analyzed for mosfet in vlsi, especially for hot - carrier effects of small dimension mosfet. and a review of the study of hot - carrier effects on devices and circuits is presented

    首先，本文對超大規模集成電路中mos器件尺寸縮小的限制及相應的可靠性問題進行了分析，特別是對小尺寸mosfet的熱載流子效應進行了較詳細的討論；並對國內外mos器件和電路的熱載流子可靠性研究進行了概述。
分享友人
分享到 Line

分享到臉書