特大規模集成 的英文怎麼說

中文拼音 [tèdàguīmójíchéng]
特大規模集成 英文
extra large scale integration
  • 特 : Ⅰ形容詞（特殊; 超出一般） particular; special; exceptional; unusual Ⅱ副詞1 （特別） especially; v...
  • 規 : Ⅰ名詞1 （畫圓形的工具） instrument for drawing circles 2 （規則; 成例） rule; regulation 3 [機械...
  • 模 : 模名詞1. （模子） mould; pattern; matrix 2. （姓氏） a surname
  • 集 : gatherassemblecollect
  • 成 : Ⅰ動詞1 （完成; 成功） accomplish; succeed 2 （成為; 變為） become; turn into 3 （成全） help comp...
  • 特大 : especially [exceptionally] big; the most
  • 規模 : scale; scope; dimensions
  • 集成 : integration集成晶體管 integrated transistor; 集成元件 integrated component
  1. Strained - soi mosfet, which appears recently, takes both the advantages of soi ( silicon on insulator ) and sige ( silicon germanium ). it has shown advantages over bulk sample in enhanced carriers mobility, as well as higher transconductance, stronger drive capability and reduced parasitic capacitances. these properties make it a promising candidate for improving the performance of microelectronics devices

    Strained - soimosfet是最近幾年才出現的新型器件，它將soi材料和sige材料結合在一起，與傳統體硅器件相比，表現出載流子遷移率高、電流驅動能力強、跨導大、寄生效應小等優勢，特別適用於高性能、高速度、低功耗超大規模集成電路。
  2. The aggregate rail transport on the special requirement ( artsr ) has a great volume of traffic with a great urgency, which may easily cause the traffic tension of the area, the disruption of working in some periods and the decline of transport efficiency

    摘要特殊需求的大規模集中鐵路運輸的運量大、時限要求緊，容易導致區域內運能緊張，並造成短時間內運輸秩序紊亂和運輸質量下降。
  3. Porous silicon ( ps ) is a new type silicon - based material developed in recent years, which has different properties compared with the crystalline materials. porous silicon can luminescence efficiently across the whole range from the near infrared, through the visible region, to the near uv region. this characteristic makes it possible to fabricate light - emitting devices and solve the key problem of the optoelectronic integrated circuit ( qeic ), opening up the bright future for the vlic

    多孔硅（ ps ）是近年來發展起來的一種新型硅基材料，具有與單晶硅材料大不相同的特性，例如，多孔硅可在近紅外和可見，甚至近紫外區輻射強烈的熒光，使得它可用來製造發光器件，並可望在解決光電子集成電子學的關鍵問題，為製造帶有光源的大規模集成電路等方面開辟新的途徑。
  4. Along with silicon ulsi technology has seen an exponential improvement in virtually any figure of merit, as described by moore ’ s law ; the miniaturization of circuit elements down to the nanometer scale has resulted in structures which exhibt novel physical effects due to the emerging quantum mechanical nature of the electrons, the new devices take advantage of quantum mechanical phenomena that emerge on the nanometer scale, including the discreteness of electrons. laws of quantum mechanics and the limitations of fabrication may soon prevent further reduction in the size of today ’ s conventional field effect transistors ( fet ’ s )

    隨著超大規模集成電路的的發展，半導體硅技術非常好地遵循moore定理發展，電子器件的特徵尺寸越來越小;數字集成電路的晶元的集成度越來越高，電子器件由微米級進入納米級，量子效應對器件工作的影響變的越來越重要，尺寸小於10nm將出現一些如庫侖阻塞等新特性。量子效應將抑制傳統晶體管fet繼續按照以前的規律繼續減小。在這種情況下，宏觀的器件理論將被替代，可能需要採用新概念的晶體管結構。
  5. Super - large scale integration, slsi

    特大規模集成電路
  6. Not only the scan route solution, the built - in self - test solution and the boundary scan solution of design for testability are summarized, but also the applications and countermeasures of these 3 solutions are analysed and compared in details

    摘要綜述了超大規模集成電路的幾種主要的可測試性設計技術，如掃描路徑法、內建自測試法和邊界掃描法等，並分析比較了這幾種設計技術各自的特點及其應用方法和策略。
  7. Given an m x n mesh - connected vlsi array with some faulty elements, the reconfiguration problem is to find a maximum - sized fault - free sub - array under the row and column rerouting scheme

    可重構vlsi陣列中低功耗子陣列的構造演算法多處理器陣列結構的大規模集成電路系統具有結構規整易於實現的特點。
  8. The demand of the wafer ' s quality become higher too. the result of the final polishing determines the quality of silicon substrate for the final polishing is the last step in the polishing. in this paper, the mechanism and dynamics process of silicon polishing are systematically analyzed

    隨著集成電路向著甚大規模集成電路（ ulsi ）日新月異的發展，作為襯底材料的硅單晶片的尺寸越來越大，特徵尺寸也不斷減小，對硅襯底拋光片的拋光質量的要求也越來越高。
  9. Digital television integrates the latest achievement made in digital image processing techniques and very - large - scale - integration technology, and thus demonstrates fascinating features that in time will render all existing tv sets obsolete

    數字電視集最新的數字圖象處理和超大規模集成電路技術為一體，並展示出不可思議的特性使現有的所有電視都會過時。
  10. With the development of vlsi ( very large scale integration ) and ulsi ( ultra large scale integration ), rtp ( rapid thermal process ), which consumes less time and less energy than classical thermal treatments, have been widely employed in semiconductor manufacturing. however, the most importance is that rtp is applied for defects engineering of silicon material. it is generally believed the rtf leads to the injection of additional vacancies into silicon wafer, and then a so - called magic denuded zone ( mdz ) in the near - surface region of cz silicon wafer was formed by controlling the vacancy distribution

    隨著大規模集成電路（ vlsi ）和超大規模集成電路的發展，節省時間、節省能量、容易控制的快速熱退火工藝在半導體器件製造工藝中得到了廣泛的應用，並且在硅材料的缺陷工程中發揮了特殊的作用，人們通過高溫快速熱處理在矽片中引入空位，並控制空位的分佈，進而形成了具有較強內吸雜能力的潔凈區。
  11. Edri has successively take on about 1900 project of design, consultation, supervision and lump - sum project, has accumulated professional technological superiority in large area, high level classifying air - condition system, ultra pure industry gas system, ultra pure water system, automatic control system, data communication system and static prevent, vibration prevent, electromagnetic pollution control which required by large - scale integrate circuit, optical fiber cable, pharmaceutical project and electronic project, etc

    Edri先後承擔了設計咨詢監理總承包工程近1900多項，對大規模集成電路光纖光纜生物製品電子工程等高新技術產品生產環境所需要的大面積高級別凈化空調系統高純工業氣體系統超純水系統自動控制系統數據通信系統以及防靜電防微振電磁環境污染控制等方面的設計具有獨特的專長。
  12. Especially, mesfet devices fabricated on lec si - gaas substrate have been adopted into very large - scale integration ( vlsi ) and monolithic microwave integrated circuit ( mmic ) extensively. therefore, it is necessary to study the influence of defects in substrate material of lec si - gaas on performance of mesfet to meet the need of design and fabrication of gaas ic

    以液封直拉半絕緣gaas為襯底的金屬半導體場效應晶體管（ mesfet ）器件是超大規模集成電路和單片微波集成電路廣泛採用的器件結構，因此研究lec法生長si - gaas （ lecsi - gaas ）襯底材料特性對mesfet器件性能的影響，對gaas集成電路和相關器件的設計及製造是非常必要的。
  13. In this paper, the methodology and implementation with hdl of design based reconfigurable architecture are discussed in detail, which includes the implementations of algorithms circuit, register file with controllable node, decoder, interface and main controller. from the introduction of design process of every module circuit, we can see easily some general feature of vlsi design with hdl

    在此基礎上詳細討論了基於可重組體系結構的密碼晶元設計方法和各電路實現的結構圖，包括演算法電路、可控節點寄存器堆、譯碼電路、介面電路和主控模塊電路等。通過對各個模塊設計過程的介紹，闡明了使用hdl語言設計超大規模集成電路的一般特點。
  14. Modem large - screen color tv sets have digital direction of the rapid development, with a super - scale integrated circuit design and manufacturing process technology and continuous improvement in computer application in the field of color, making large - screen color television sets in various functional control, commissioning, testing and maintenance matters with a new digital technology, i. e., i ^ 2c bus and the unique maintenance methods

    摘要隨著超大規模集成電路設計工藝和生產製造技術的不斷提高以及電子計算機在彩色電視機領域的廣泛應用，使得大屏幕彩色電視機在各種功能控制、生產調試、檢測維修等方面有了一個嶄新的技術，即i ^ 2c總線及其特有的維修方法。
  15. After having analyzed the theory of the calculator circuit thoroughly, the author made use of the characteristic of the calendar circuit and put forward a new design method, namely replacing the static circuit with the dynamic circuit to reduce the area of whole chip. now the author has finished the design of the calendar circuit and accomplished the layout design with the full - custom method

    本文作者在透徹分析計算器原理的基礎上，利用萬年歷電路的工作頻率的特點，提出了以cmos動態門代替靜態觸發器的設計方法，獨立設計出萬年歷部分電路，將其與計算器部分電路緊密融合，構成一塊完整的數字大規模集成電路，並以全定製的方法實現了整個晶元的版圖設計。
  16. It is a rising new science. the control system improved from the distributed control system ( dcs ) to fieldbus control system ( fcs )

    Fieldbus技術是近些年隨著智能傳感器、計算機、網路技術，特別是大規模集成電路技術的發展而新興起的一門科學。
  17. Extreme ultraviolet lithography ( euvl ) represents one of the promising technologies for supporting integrated circuit ( 1c ) industry ' s lithography needs during the first decade of the 21st century. this technology builds on conventional optical lithography experience and infrastructure, uses 11 - to 14 - nm photon illumination, and is expected to support multiple technology generation from 65 nm to 35 nm

    極紫外投影光刻（ euvl ， extremeultravioletlithography ）技術作為下一代光刻技術中最佳候選技術，建立於可見/紫外光學光刻的諸多關鍵單元技術基礎之上，工作波長為11 14nm ，適用於製造特徵尺寸為65 35nm的數代超大規模集成電路，預計在2006年將成為主流光刻技術。
  18. With the development of large - scale and very large - scale integrated circuit technology, especially with the invention and application of microprocessor, the control technology of packing machine is developing very fast

    隨著大規模集成電路技術、超大規模集成電路技術的發展，特別是微處理器的出現和廣泛應用，包裝機械的控制技術有了突飛猛進的發展。
  19. During the fabrication or service, if the applied tensile stresses exceed the probabilistic tensile strength of silicon, then failure will occur. even a tiny crack will bring tremendous damage to devices and circuits. especially nowadays, with the increasing of silicon wafer diameter, warpage in heat treatment, defects and dislocations generated in silicon often become critical problems in ulsi devices fabrication

    特別在大規模集成電路與器件生產中，一個微小的裂紋就可能導致后道工序中電路與器件的完全損壞；而且在熱處理過程引起的翹曲，使光刻精度下降；在矽片內部產生的氧沉澱及位錯等缺陷，會導致集成電路或器件的漏電流增加，使器件失效。
  20. First, the scaling limitation and relative reliability problems are analyzed for mosfet in vlsi, especially for hot - carrier effects of small dimension mosfet. and a review of the study of hot - carrier effects on devices and circuits is presented

    首先，本文對超大規模集成電路中mos器件尺寸縮小的限制及相應的可靠性問題進行了分析，特別是對小尺寸mosfet的熱載流子效應進行了較詳細的討論；並對國內外mos器件和電路的熱載流子可靠性研究進行了概述。
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