界膜核 的英文怎麼說

中文拼音 [jiè]
界膜核 英文
limitans nucleus
  • : 名詞1 (相交的地方; 劃分的界限) boundary 2 (一定的范圍) scope; extent 3 (按職業、工作或性別等...
  • : 名詞1. [生物學] (像薄皮的組織) membrane 2. (像膜的薄皮) film; thin coating
  • : 核構詞成分。
  1. They do not have a nuclear membrane and so no discrete nucleus.

    體細胞沒有,因此也沒有限分明的細胞
  2. By compressing a monolayer film, the coexistence of liquid condensed ( lc ) and liquid expanded ( le ) phases can be reached. the transition from le to lc is usually regarded as a first - order one, so the theory of crystallization can be applied. in this article we review our recent studies on the growth of lc domains in the le - lc coexistence region driven by the illumination of a fluorescent microscope. the mechanism of this unusual 2d domain growth phenomenon is discussed. the formation of faceted, dendritic and fractal - like domains as well as the evolution and the transition of these patterns are investigated

    當處于氣液面的類脂類化合物的單分子被壓縮時,隨著分子間距的縮小,單分子將經歷一系列相變過程.通過熒光顯微術可以觀測到新相的成和生長過程.由於單分子的二維特性,該系統中的實驗觀測對于檢驗和發展二維面生長理論尤為重要.本文總結了近年來本課題組與相關單位合作,在單分子系統中發現的實驗現象以及對其生長機制的系列研究.內容包括對單分子系統中的成面穩定性、枝晶生長、形態演變等的觀測和分析
  3. Abstract : by compressing a monolayer film, the coexistence of liquid condensed ( lc ) and liquid expanded ( le ) phases can be reached. the transition from le to lc is usually regarded as a first - order one, so the theory of crystallization can be applied. in this article we review our recent studies on the growth of lc domains in the le - lc coexistence region driven by the illumination of a fluorescent microscope. the mechanism of this unusual 2d domain growth phenomenon is discussed. the formation of faceted, dendritic and fractal - like domains as well as the evolution and the transition of these patterns are investigated

    文摘:當處于氣液面的類脂類化合物的單分子被壓縮時,隨著分子間距的縮小,單分子將經歷一系列相變過程.通過熒光顯微術可以觀測到新相的成和生長過程.由於單分子的二維特性,該系統中的實驗觀測對于檢驗和發展二維面生長理論尤為重要.本文總結了近年來本課題組與相關單位合作,在單分子系統中發現的實驗現象以及對其生長機制的系列研究.內容包括對單分子系統中的成面穩定性、枝晶生長、形態演變等的觀測和分析
  4. Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth

    文摘:在成功地外延生長超導、鐵電、鐵磁等多種性質的鈣鈦礦結構氧化物薄的基礎上,討論影響氧化物薄外延生長的一些因素.考慮到相形成和薄生長動力學,在利用脈沖激光淀積法外延生長氧化物薄中襯底溫度是十分重要的工藝參數.襯底溫度對成相和生長薄的取向都有影響.考慮到薄是首先在襯底表面成、成相併生長.因此襯底材料晶格的影響是不容忽視的.觀察到襯底材料對薄外延生長溫度的影響.在適當的工藝條件下,利用低溫三步法工藝制備得到有很強織構的外延薄.這突出表明面層的相互作用對鈣鈦礦結構薄的取向有著相當大的影響
  5. The results indicate that phosphate film forms at first at the boundaries between ferrite and graphite

    結果表明,磷化首先在鐵素體石墨面等處形成,是一個不均勻形過程。
  6. The seemingly mcnt content in pt can be controlled by repeating the coatings of the film and increasing the mcnt doped concentration of the sol. the heterogeneous nucleation at the interface between mcnt and pt was induced by the doption of mcnt. the films which were calcined at 500 ? had formed perovskite and large crystal content, means that perovskite formed at the lower temperature, in conclusion, the crystalline ability of pt was improved by the doption of tb and mcnt

    納米碳管的引入,使得體系在納米碳管和pt之間的面產生非均態化,隨pt薄勢壘的降低,摻納米碳管的pt薄在較低溫度下即可形成鈣鈦礦相,在500的較低溫度,就可獲得結晶完整且己具有很大結晶量的薄
  7. It shows that the interface energy and the heterogeneous nucleation barrier were changed by the doping of tb. so the relationship between crystal content and tb doped concentration can be " described as : y = 1 - exp ( k1 exp ( k cos ( ( x + ) 3 ) it shows that the crystal content will reach a maximum with increasing tb doped concentration because of the influence of heterogeneous nucleation barrier variation

    本文在分析面能的基礎上,推導了在一定條件下薄受摻tb影響的鈣鈦礦相析晶含量的理論表達式為: y 1 yxp ( k ; xxp ( kcos ( s ? ( x a ) 』 )該式表明了受體系成面能的變化影響,晶體生長受摻tb濃度影響出現極值。
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